Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) ap...
Ausführliche Beschreibung
Autor*in: |
Lazarenko, P. I. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2017 |
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Schlagwörter: |
temperature dependences of the resistivity |
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Anmerkung: |
© Springer Science+Business Media New York 2017 |
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Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Springer US, 1992, 59(2017), 9 vom: Jan., Seite 1417-1424 |
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Übergeordnetes Werk: |
volume:59 ; year:2017 ; number:9 ; month:01 ; pages:1417-1424 |
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DOI / URN: |
10.1007/s11182-017-0925-x |
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OLC2033087093 |
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520 | |a In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. | ||
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10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
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10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
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10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
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10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
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10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
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In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. © Springer Science+Business Media New York 2017 |
abstractGer |
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. © Springer Science+Business Media New York 2017 |
abstract_unstemmed |
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. © Springer Science+Business Media New York 2017 |
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title_short |
Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
url |
https://doi.org/10.1007/s11182-017-0925-x |
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author2 |
Kozyukhin, S. A. Sherchenkov, A. A. Babich, A. V. Timoshenkov, S. P. Gromov, D. G. Zabolotskaya, A. V. Kozik, V. V. |
author2Str |
Kozyukhin, S. A. Sherchenkov, A. A. Babich, A. V. Timoshenkov, S. P. Gromov, D. G. Zabolotskaya, A. V. Kozik, V. V. |
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doi_str |
10.1007/s11182-017-0925-x |
up_date |
2024-07-03T15:38:45.398Z |
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