Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) ap...
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| Autor*in: |
Lazarenko, P. I. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
temperature dependences of the resistivity |
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| Anmerkung: |
© Springer Science+Business Media New York 2017 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Springer US, 1992, 59(2017), 9 vom: Jan., Seite 1417-1424 |
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| Übergeordnetes Werk: |
volume:59 ; year:2017 ; number:9 ; month:01 ; pages:1417-1424 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11182-017-0925-x |
|---|
| Katalog-ID: |
OLC2033087093 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2033087093 | ||
| 003 | DE-627 | ||
| 005 | 20230504040051.0 | ||
| 007 | tu | ||
| 008 | 200819s2017 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s11182-017-0925-x |2 doi | |
| 035 | |a (DE-627)OLC2033087093 | ||
| 035 | |a (DE-He213)s11182-017-0925-x-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 530 |a 370 |q VZ |
| 100 | 1 | |a Lazarenko, P. I. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
| 264 | 1 | |c 2017 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Springer Science+Business Media New York 2017 | ||
| 520 | |a In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. | ||
| 650 | 4 | |a phase change memory | |
| 650 | 4 | |a temperature dependences of the resistivity | |
| 650 | 4 | |a current-voltage characteristics | |
| 650 | 4 | |a energy diagram | |
| 650 | 4 | |a GST147 | |
| 650 | 4 | |a GST124 | |
| 650 | 4 | |a GST225 | |
| 700 | 1 | |a Kozyukhin, S. A. |4 aut | |
| 700 | 1 | |a Sherchenkov, A. A. |4 aut | |
| 700 | 1 | |a Babich, A. V. |4 aut | |
| 700 | 1 | |a Timoshenkov, S. P. |4 aut | |
| 700 | 1 | |a Gromov, D. G. |4 aut | |
| 700 | 1 | |a Zabolotskaya, A. V. |4 aut | |
| 700 | 1 | |a Kozik, V. V. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Russian physics journal |d Springer US, 1992 |g 59(2017), 9 vom: Jan., Seite 1417-1424 |w (DE-627)131169718 |w (DE-600)1138228-4 |w (DE-576)033029253 |x 1064-8887 |7 nnns |
| 773 | 1 | 8 | |g volume:59 |g year:2017 |g number:9 |g month:01 |g pages:1417-1424 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s11182-017-0925-x |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_70 | ||
| 951 | |a AR | ||
| 952 | |d 59 |j 2017 |e 9 |c 01 |h 1417-1424 | ||
| author_variant |
p i l pi pil s a k sa sak a a s aa aas a v b av avb s p t sp spt d g g dg dgg a v z av avz v v k vv vvk |
|---|---|
| matchkey_str |
article:10648887:2017----::lcrpyiapoeteogsttiflsopae |
| hierarchy_sort_str |
2017 |
| publishDate |
2017 |
| allfields |
10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
| spelling |
10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
| allfields_unstemmed |
10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
| allfieldsGer |
10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
| allfieldsSound |
10.1007/s11182-017-0925-x doi (DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lazarenko, P. I. verfasserin aut Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 Kozyukhin, S. A. aut Sherchenkov, A. A. aut Babich, A. V. aut Timoshenkov, S. P. aut Gromov, D. G. aut Zabolotskaya, A. V. aut Kozik, V. V. aut Enthalten in Russian physics journal Springer US, 1992 59(2017), 9 vom: Jan., Seite 1417-1424 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:59 year:2017 number:9 month:01 pages:1417-1424 https://doi.org/10.1007/s11182-017-0925-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 59 2017 9 01 1417-1424 |
| language |
English |
| source |
Enthalten in Russian physics journal 59(2017), 9 vom: Jan., Seite 1417-1424 volume:59 year:2017 number:9 month:01 pages:1417-1424 |
| sourceStr |
Enthalten in Russian physics journal 59(2017), 9 vom: Jan., Seite 1417-1424 volume:59 year:2017 number:9 month:01 pages:1417-1424 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Russian physics journal |
| authorswithroles_txt_mv |
Lazarenko, P. I. @@aut@@ Kozyukhin, S. A. @@aut@@ Sherchenkov, A. A. @@aut@@ Babich, A. V. @@aut@@ Timoshenkov, S. P. @@aut@@ Gromov, D. G. @@aut@@ Zabolotskaya, A. V. @@aut@@ Kozik, V. V. @@aut@@ |
| publishDateDaySort_date |
2017-01-01T00:00:00Z |
| hierarchy_top_id |
131169718 |
| dewey-sort |
3530 |
| id |
OLC2033087093 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2033087093</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504040051.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11182-017-0925-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2033087093</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11182-017-0925-x-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">370</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lazarenko, P. I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media New York 2017</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase change memory</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">temperature dependences of the resistivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">current-voltage characteristics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">energy diagram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GST147</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GST124</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GST225</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kozyukhin, S. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sherchenkov, A. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Babich, A. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Timoshenkov, S. P.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gromov, D. G.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zabolotskaya, A. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kozik, V. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Russian physics journal</subfield><subfield code="d">Springer US, 1992</subfield><subfield code="g">59(2017), 9 vom: Jan., Seite 1417-1424</subfield><subfield code="w">(DE-627)131169718</subfield><subfield code="w">(DE-600)1138228-4</subfield><subfield code="w">(DE-576)033029253</subfield><subfield code="x">1064-8887</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:59</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:9</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:1417-1424</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11182-017-0925-x</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">59</subfield><subfield code="j">2017</subfield><subfield code="e">9</subfield><subfield code="c">01</subfield><subfield code="h">1417-1424</subfield></datafield></record></collection>
|
| author |
Lazarenko, P. I. |
| spellingShingle |
Lazarenko, P. I. ddc 530 misc phase change memory misc temperature dependences of the resistivity misc current-voltage characteristics misc energy diagram misc GST147 misc GST124 misc GST225 Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
| authorStr |
Lazarenko, P. I. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)131169718 |
| format |
Article |
| dewey-ones |
530 - Physics 370 - Education |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
1064-8887 |
| topic_title |
530 370 VZ Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices phase change memory temperature dependences of the resistivity current-voltage characteristics energy diagram GST147 GST124 GST225 |
| topic |
ddc 530 misc phase change memory misc temperature dependences of the resistivity misc current-voltage characteristics misc energy diagram misc GST147 misc GST124 misc GST225 |
| topic_unstemmed |
ddc 530 misc phase change memory misc temperature dependences of the resistivity misc current-voltage characteristics misc energy diagram misc GST147 misc GST124 misc GST225 |
| topic_browse |
ddc 530 misc phase change memory misc temperature dependences of the resistivity misc current-voltage characteristics misc energy diagram misc GST147 misc GST124 misc GST225 |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Russian physics journal |
| hierarchy_parent_id |
131169718 |
| dewey-tens |
530 - Physics 370 - Education |
| hierarchy_top_title |
Russian physics journal |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 |
| title |
Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
| ctrlnum |
(DE-627)OLC2033087093 (DE-He213)s11182-017-0925-x-p |
| title_full |
Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
| author_sort |
Lazarenko, P. I. |
| journal |
Russian physics journal |
| journalStr |
Russian physics journal |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 300 - Social sciences |
| recordtype |
marc |
| publishDateSort |
2017 |
| contenttype_str_mv |
txt |
| container_start_page |
1417 |
| author_browse |
Lazarenko, P. I. Kozyukhin, S. A. Sherchenkov, A. A. Babich, A. V. Timoshenkov, S. P. Gromov, D. G. Zabolotskaya, A. V. Kozik, V. V. |
| container_volume |
59 |
| class |
530 370 VZ |
| format_se |
Aufsätze |
| author-letter |
Lazarenko, P. I. |
| doi_str_mv |
10.1007/s11182-017-0925-x |
| dewey-full |
530 370 |
| title_sort |
electrophysical properties of ge–sb–te thin films for phase change memory devices |
| title_auth |
Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
| abstract |
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. © Springer Science+Business Media New York 2017 |
| abstractGer |
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. © Springer Science+Business Media New York 2017 |
| abstract_unstemmed |
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. © Springer Science+Business Media New York 2017 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 |
| container_issue |
9 |
| title_short |
Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
| url |
https://doi.org/10.1007/s11182-017-0925-x |
| remote_bool |
false |
| author2 |
Kozyukhin, S. A. Sherchenkov, A. A. Babich, A. V. Timoshenkov, S. P. Gromov, D. G. Zabolotskaya, A. V. Kozik, V. V. |
| author2Str |
Kozyukhin, S. A. Sherchenkov, A. A. Babich, A. V. Timoshenkov, S. P. Gromov, D. G. Zabolotskaya, A. V. Kozik, V. V. |
| ppnlink |
131169718 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s11182-017-0925-x |
| up_date |
2024-07-03T15:38:45.398Z |
| _version_ |
1803572871582187520 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2033087093</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504040051.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11182-017-0925-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2033087093</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11182-017-0925-x-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">370</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lazarenko, P. I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media New York 2017</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions $ GeSb_{4} $$ Te_{7} $ (GST147), $ GeSb_{2} $$ Te_{4} $ (GST124), and $ Ge_{2} $$ Sb_{2} $$ Te_{5} $ (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase change memory</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">temperature dependences of the resistivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">current-voltage characteristics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">energy diagram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GST147</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GST124</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GST225</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kozyukhin, S. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sherchenkov, A. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Babich, A. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Timoshenkov, S. P.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gromov, D. G.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zabolotskaya, A. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kozik, V. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Russian physics journal</subfield><subfield code="d">Springer US, 1992</subfield><subfield code="g">59(2017), 9 vom: Jan., Seite 1417-1424</subfield><subfield code="w">(DE-627)131169718</subfield><subfield code="w">(DE-600)1138228-4</subfield><subfield code="w">(DE-576)033029253</subfield><subfield code="x">1064-8887</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:59</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:9</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:1417-1424</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11182-017-0925-x</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">59</subfield><subfield code="j">2017</subfield><subfield code="e">9</subfield><subfield code="c">01</subfield><subfield code="h">1417-1424</subfield></datafield></record></collection>
|
| score |
7.401638 |