Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering
The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local lev...
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Gespeichert in:
| Autor*in: |
Lygdenova, T. Z. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2018 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Springer US, 1992, 60(2018), 11 vom: März, Seite 1911-1916 |
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| Übergeordnetes Werk: |
volume:60 ; year:2018 ; number:11 ; month:03 ; pages:1911-1916 |
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| DOI / URN: |
10.1007/s11182-018-1302-0 |
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| 520 | |a The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Еt located 0.95 eV below the conduction band bottom. | ||
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10.1007/s11182-018-1302-0 doi (DE-627)OLC2033090884 (DE-He213)s11182-018-1302-0-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lygdenova, T. Z. verfasserin aut Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering 2018 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2018 The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Еt located 0.95 eV below the conduction band bottom. gallium oxide phase composition surface morphology current-voltage characteristic Kalygina, V. M. aut Novikov, V. A. aut Prudaev, I. A. aut Tolbanov, O. P. aut Tyazhev, A. V. aut Enthalten in Russian physics journal Springer US, 1992 60(2018), 11 vom: März, Seite 1911-1916 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:60 year:2018 number:11 month:03 pages:1911-1916 https://doi.org/10.1007/s11182-018-1302-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 60 2018 11 03 1911-1916 |
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10.1007/s11182-018-1302-0 doi (DE-627)OLC2033090884 (DE-He213)s11182-018-1302-0-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lygdenova, T. Z. verfasserin aut Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering 2018 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2018 The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Еt located 0.95 eV below the conduction band bottom. gallium oxide phase composition surface morphology current-voltage characteristic Kalygina, V. M. aut Novikov, V. A. aut Prudaev, I. A. aut Tolbanov, O. P. aut Tyazhev, A. V. aut Enthalten in Russian physics journal Springer US, 1992 60(2018), 11 vom: März, Seite 1911-1916 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:60 year:2018 number:11 month:03 pages:1911-1916 https://doi.org/10.1007/s11182-018-1302-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 60 2018 11 03 1911-1916 |
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10.1007/s11182-018-1302-0 doi (DE-627)OLC2033090884 (DE-He213)s11182-018-1302-0-p DE-627 ger DE-627 rakwb eng 530 370 VZ Lygdenova, T. Z. verfasserin aut Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering 2018 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2018 The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Еt located 0.95 eV below the conduction band bottom. gallium oxide phase composition surface morphology current-voltage characteristic Kalygina, V. M. aut Novikov, V. A. aut Prudaev, I. A. aut Tolbanov, O. P. aut Tyazhev, A. V. aut Enthalten in Russian physics journal Springer US, 1992 60(2018), 11 vom: März, Seite 1911-1916 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:60 year:2018 number:11 month:03 pages:1911-1916 https://doi.org/10.1007/s11182-018-1302-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 60 2018 11 03 1911-1916 |
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The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Еt located 0.95 eV below the conduction band bottom. © Springer Science+Business Media, LLC, part of Springer Nature 2018 |
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The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Еt located 0.95 eV below the conduction band bottom. © Springer Science+Business Media, LLC, part of Springer Nature 2018 |
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The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Еt located 0.95 eV below the conduction band bottom. © Springer Science+Business Media, LLC, part of Springer Nature 2018 |
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