Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS s...
Ausführliche Beschreibung
Autor*in: |
Novikov, V. A. [verfasserIn] |
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Artikel |
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Sprache: |
Englisch |
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2019 |
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Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Springer US, 1992, 62(2019), 1 vom: Mai, Seite 90-99 |
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Übergeordnetes Werk: |
volume:62 ; year:2019 ; number:1 ; month:05 ; pages:90-99 |
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DOI / URN: |
10.1007/s11182-019-01687-y |
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Katalog-ID: |
OLC2033094693 |
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520 | |a In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. | ||
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10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
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10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
allfields_unstemmed |
10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
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10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
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10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
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Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
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Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
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Novikov, V. A. |
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Novikov, V. A. Voitsekhovskii, A. V. Nesmelov, S. N. Dzyadukh, S. M. Kopylova, T. N. Degtyarenko, K. M. Chernikov, E. V. Kalygina, V. M. |
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Novikov, V. A. |
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530 370 |
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electrophysical characteristics of the pentacene-based mis structures with a $ sio_{2} $ insulator |
title_auth |
Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
abstract |
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
abstractGer |
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
abstract_unstemmed |
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
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Voitsekhovskii, A. V. Nesmelov, S. N. Dzyadukh, S. M. Kopylova, T. N. Degtyarenko, K. M. Chernikov, E. V. Kalygina, V. M. |
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Voitsekhovskii, A. V. Nesmelov, S. N. Dzyadukh, S. M. Kopylova, T. N. Degtyarenko, K. M. Chernikov, E. V. Kalygina, V. M. |
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