Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS s...
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| Autor*in: |
Novikov, V. A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Springer US, 1992, 62(2019), 1 vom: Mai, Seite 90-99 |
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| Übergeordnetes Werk: |
volume:62 ; year:2019 ; number:1 ; month:05 ; pages:90-99 |
| Links: |
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| DOI / URN: |
10.1007/s11182-019-01687-y |
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| Katalog-ID: |
OLC2033094693 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2033094693 | ||
| 003 | DE-627 | ||
| 005 | 20230504040147.0 | ||
| 007 | tu | ||
| 008 | 200819s2019 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s11182-019-01687-y |2 doi | |
| 035 | |a (DE-627)OLC2033094693 | ||
| 035 | |a (DE-He213)s11182-019-01687-y-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 530 |a 370 |q VZ |
| 100 | 1 | |a Novikov, V. A. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
| 264 | 1 | |c 2019 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Springer Science+Business Media, LLC, part of Springer Nature 2019 | ||
| 520 | |a In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. | ||
| 650 | 4 | |a organic semiconductor | |
| 650 | 4 | |a pentacene | |
| 650 | 4 | |a MIS structure | |
| 650 | 4 | |a SiO | |
| 650 | 4 | |a Ga | |
| 650 | 4 | |a O | |
| 650 | 4 | |a admittance | |
| 650 | 4 | |a equivalent circuits | |
| 650 | 4 | |a low-temperature measurements | |
| 650 | 4 | |a inversion layer | |
| 650 | 4 | |a bulk traps | |
| 700 | 1 | |a Voitsekhovskii, A. V. |4 aut | |
| 700 | 1 | |a Nesmelov, S. N. |4 aut | |
| 700 | 1 | |a Dzyadukh, S. M. |4 aut | |
| 700 | 1 | |a Kopylova, T. N. |4 aut | |
| 700 | 1 | |a Degtyarenko, K. M. |4 aut | |
| 700 | 1 | |a Chernikov, E. V. |4 aut | |
| 700 | 1 | |a Kalygina, V. M. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Russian physics journal |d Springer US, 1992 |g 62(2019), 1 vom: Mai, Seite 90-99 |w (DE-627)131169718 |w (DE-600)1138228-4 |w (DE-576)033029253 |x 1064-8887 |7 nnns |
| 773 | 1 | 8 | |g volume:62 |g year:2019 |g number:1 |g month:05 |g pages:90-99 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s11182-019-01687-y |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_70 | ||
| 951 | |a AR | ||
| 952 | |d 62 |j 2019 |e 1 |c 05 |h 90-99 | ||
| author_variant |
v a n va van a v v av avv s n n sn snn s m d sm smd t n k tn tnk k m d km kmd e v c ev evc v m k vm vmk |
|---|---|
| matchkey_str |
article:10648887:2019----::lcrpyiacaatrsisfhpnaeeaemstutr |
| hierarchy_sort_str |
2019 |
| publishDate |
2019 |
| allfields |
10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
| spelling |
10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
| allfields_unstemmed |
10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
| allfieldsGer |
10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
| allfieldsSound |
10.1007/s11182-019-01687-y doi (DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p DE-627 ger DE-627 rakwb eng 530 370 VZ Novikov, V. A. verfasserin aut Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps Voitsekhovskii, A. V. aut Nesmelov, S. N. aut Dzyadukh, S. M. aut Kopylova, T. N. aut Degtyarenko, K. M. aut Chernikov, E. V. aut Kalygina, V. M. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 1 vom: Mai, Seite 90-99 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:1 month:05 pages:90-99 https://doi.org/10.1007/s11182-019-01687-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 1 05 90-99 |
| language |
English |
| source |
Enthalten in Russian physics journal 62(2019), 1 vom: Mai, Seite 90-99 volume:62 year:2019 number:1 month:05 pages:90-99 |
| sourceStr |
Enthalten in Russian physics journal 62(2019), 1 vom: Mai, Seite 90-99 volume:62 year:2019 number:1 month:05 pages:90-99 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Russian physics journal |
| authorswithroles_txt_mv |
Novikov, V. A. @@aut@@ Voitsekhovskii, A. V. @@aut@@ Nesmelov, S. N. @@aut@@ Dzyadukh, S. M. @@aut@@ Kopylova, T. N. @@aut@@ Degtyarenko, K. M. @@aut@@ Chernikov, E. V. @@aut@@ Kalygina, V. M. @@aut@@ |
| publishDateDaySort_date |
2019-05-01T00:00:00Z |
| hierarchy_top_id |
131169718 |
| dewey-sort |
3530 |
| id |
OLC2033094693 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2033094693</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504040147.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2019 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11182-019-01687-y</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2033094693</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11182-019-01687-y-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">370</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Novikov, V. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC, part of Springer Nature 2019</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">organic semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">pentacene</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MIS structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiO</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ga</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">O</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">admittance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">equivalent circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-temperature measurements</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">inversion layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bulk traps</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Voitsekhovskii, A. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nesmelov, S. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dzyadukh, S. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kopylova, T. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Degtyarenko, K. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chernikov, E. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kalygina, V. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Russian physics journal</subfield><subfield code="d">Springer US, 1992</subfield><subfield code="g">62(2019), 1 vom: Mai, Seite 90-99</subfield><subfield code="w">(DE-627)131169718</subfield><subfield code="w">(DE-600)1138228-4</subfield><subfield code="w">(DE-576)033029253</subfield><subfield code="x">1064-8887</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:1</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:90-99</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11182-019-01687-y</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="j">2019</subfield><subfield code="e">1</subfield><subfield code="c">05</subfield><subfield code="h">90-99</subfield></datafield></record></collection>
|
| author |
Novikov, V. A. |
| spellingShingle |
Novikov, V. A. ddc 530 misc organic semiconductor misc pentacene misc MIS structure misc SiO misc Ga misc O misc admittance misc equivalent circuits misc low-temperature measurements misc inversion layer misc bulk traps Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
| authorStr |
Novikov, V. A. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)131169718 |
| format |
Article |
| dewey-ones |
530 - Physics 370 - Education |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
1064-8887 |
| topic_title |
530 370 VZ Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator organic semiconductor pentacene MIS structure SiO Ga O admittance equivalent circuits low-temperature measurements inversion layer bulk traps |
| topic |
ddc 530 misc organic semiconductor misc pentacene misc MIS structure misc SiO misc Ga misc O misc admittance misc equivalent circuits misc low-temperature measurements misc inversion layer misc bulk traps |
| topic_unstemmed |
ddc 530 misc organic semiconductor misc pentacene misc MIS structure misc SiO misc Ga misc O misc admittance misc equivalent circuits misc low-temperature measurements misc inversion layer misc bulk traps |
| topic_browse |
ddc 530 misc organic semiconductor misc pentacene misc MIS structure misc SiO misc Ga misc O misc admittance misc equivalent circuits misc low-temperature measurements misc inversion layer misc bulk traps |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Russian physics journal |
| hierarchy_parent_id |
131169718 |
| dewey-tens |
530 - Physics 370 - Education |
| hierarchy_top_title |
Russian physics journal |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 |
| title |
Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
| ctrlnum |
(DE-627)OLC2033094693 (DE-He213)s11182-019-01687-y-p |
| title_full |
Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
| author_sort |
Novikov, V. A. |
| journal |
Russian physics journal |
| journalStr |
Russian physics journal |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 300 - Social sciences |
| recordtype |
marc |
| publishDateSort |
2019 |
| contenttype_str_mv |
txt |
| container_start_page |
90 |
| author_browse |
Novikov, V. A. Voitsekhovskii, A. V. Nesmelov, S. N. Dzyadukh, S. M. Kopylova, T. N. Degtyarenko, K. M. Chernikov, E. V. Kalygina, V. M. |
| container_volume |
62 |
| class |
530 370 VZ |
| format_se |
Aufsätze |
| author-letter |
Novikov, V. A. |
| doi_str_mv |
10.1007/s11182-019-01687-y |
| dewey-full |
530 370 |
| title_sort |
electrophysical characteristics of the pentacene-based mis structures with a $ sio_{2} $ insulator |
| title_auth |
Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
| abstract |
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
| abstractGer |
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
| abstract_unstemmed |
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 |
| container_issue |
1 |
| title_short |
Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator |
| url |
https://doi.org/10.1007/s11182-019-01687-y |
| remote_bool |
false |
| author2 |
Voitsekhovskii, A. V. Nesmelov, S. N. Dzyadukh, S. M. Kopylova, T. N. Degtyarenko, K. M. Chernikov, E. V. Kalygina, V. M. |
| author2Str |
Voitsekhovskii, A. V. Nesmelov, S. N. Dzyadukh, S. M. Kopylova, T. N. Degtyarenko, K. M. Chernikov, E. V. Kalygina, V. M. |
| ppnlink |
131169718 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s11182-019-01687-y |
| up_date |
2024-07-03T15:40:40.731Z |
| _version_ |
1803572992523894784 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2033094693</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504040147.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2019 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11182-019-01687-y</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2033094693</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11182-019-01687-y-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">370</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Novikov, V. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrophysical Characteristics of the Pentacene-based MIS Structures with a $ SiO_{2} $ Insulator</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC, part of Springer Nature 2019</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on $ SiO_{2} $ and $ SiO_{2} $/$ Ga_{2} $$ O_{3} $ substrates, was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a $ SiO_{2} $ insulator have virtually no hysteresis. It is shown that at temperatures of 150–300 K, an inversion layer is formed in the structures at large positive bias voltages. The concentration of holes in pentacene, determined from the capacitive measurements, exceeds $ 10^{18} $ $ cm^{–3} $ and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with the $ SiO_{2} $ insulator are in good agreement with the results of calculations performed using the method of equivalent circuits. For structures with a $ Ga_{2} $$ O_{3} $ layer, the negative differential conductance of the insulating layer was detected, which requires the complication of the equivalent circuit. The possibility of using the low-temperature admittance measurements for studying the traps in the pentacene film bulk is shown.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">organic semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">pentacene</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MIS structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiO</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ga</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">O</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">admittance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">equivalent circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-temperature measurements</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">inversion layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bulk traps</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Voitsekhovskii, A. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nesmelov, S. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dzyadukh, S. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kopylova, T. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Degtyarenko, K. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chernikov, E. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kalygina, V. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Russian physics journal</subfield><subfield code="d">Springer US, 1992</subfield><subfield code="g">62(2019), 1 vom: Mai, Seite 90-99</subfield><subfield code="w">(DE-627)131169718</subfield><subfield code="w">(DE-600)1138228-4</subfield><subfield code="w">(DE-576)033029253</subfield><subfield code="x">1064-8887</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:1</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:90-99</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11182-019-01687-y</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="j">2019</subfield><subfield code="e">1</subfield><subfield code="c">05</subfield><subfield code="h">90-99</subfield></datafield></record></collection>
|
| score |
7.399721 |