Mechanism of Electrical Conductivity and Thermal Conductivity in $ AgSbSe_{2} $
Research was done on electrical conductivity and thermal conductivity of $ AgSbSe_{2} $ in the temperature range of 80–330 K. It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and d...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ragimov, S. S. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Springer US, 1992, 62(2019), 6 vom: Okt., Seite 1077-1081 |
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| Übergeordnetes Werk: |
volume:62 ; year:2019 ; number:6 ; month:10 ; pages:1077-1081 |
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| DOI / URN: |
10.1007/s11182-019-01817-6 |
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OLC2033095940 |
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| 520 | |a Research was done on electrical conductivity and thermal conductivity of $ AgSbSe_{2} $ in the temperature range of 80–330 K. It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of $ AgSbSe_{2} $ leads to the low value of lattice thermal conductivity. | ||
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10.1007/s11182-019-01817-6 doi (DE-627)OLC2033095940 (DE-He213)s11182-019-01817-6-p DE-627 ger DE-627 rakwb eng 530 370 VZ Ragimov, S. S. verfasserin aut Mechanism of Electrical Conductivity and Thermal Conductivity in $ AgSbSe_{2} $ 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Research was done on electrical conductivity and thermal conductivity of $ AgSbSe_{2} $ in the temperature range of 80–330 K. It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of $ AgSbSe_{2} $ leads to the low value of lattice thermal conductivity. thermoelectric material hopping conductivity thermal conductivity defects Saddinova, A. A. aut Aliyeva, A. I. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 6 vom: Okt., Seite 1077-1081 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:6 month:10 pages:1077-1081 https://doi.org/10.1007/s11182-019-01817-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 6 10 1077-1081 |
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10.1007/s11182-019-01817-6 doi (DE-627)OLC2033095940 (DE-He213)s11182-019-01817-6-p DE-627 ger DE-627 rakwb eng 530 370 VZ Ragimov, S. S. verfasserin aut Mechanism of Electrical Conductivity and Thermal Conductivity in $ AgSbSe_{2} $ 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Research was done on electrical conductivity and thermal conductivity of $ AgSbSe_{2} $ in the temperature range of 80–330 K. It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of $ AgSbSe_{2} $ leads to the low value of lattice thermal conductivity. thermoelectric material hopping conductivity thermal conductivity defects Saddinova, A. A. aut Aliyeva, A. I. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 6 vom: Okt., Seite 1077-1081 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:6 month:10 pages:1077-1081 https://doi.org/10.1007/s11182-019-01817-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 6 10 1077-1081 |
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10.1007/s11182-019-01817-6 doi (DE-627)OLC2033095940 (DE-He213)s11182-019-01817-6-p DE-627 ger DE-627 rakwb eng 530 370 VZ Ragimov, S. S. verfasserin aut Mechanism of Electrical Conductivity and Thermal Conductivity in $ AgSbSe_{2} $ 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Research was done on electrical conductivity and thermal conductivity of $ AgSbSe_{2} $ in the temperature range of 80–330 K. It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of $ AgSbSe_{2} $ leads to the low value of lattice thermal conductivity. thermoelectric material hopping conductivity thermal conductivity defects Saddinova, A. A. aut Aliyeva, A. I. aut Enthalten in Russian physics journal Springer US, 1992 62(2019), 6 vom: Okt., Seite 1077-1081 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:62 year:2019 number:6 month:10 pages:1077-1081 https://doi.org/10.1007/s11182-019-01817-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 62 2019 6 10 1077-1081 |
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Research was done on electrical conductivity and thermal conductivity of $ AgSbSe_{2} $ in the temperature range of 80–330 K. It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of $ AgSbSe_{2} $ leads to the low value of lattice thermal conductivity. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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Research was done on electrical conductivity and thermal conductivity of $ AgSbSe_{2} $ in the temperature range of 80–330 K. It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of $ AgSbSe_{2} $ leads to the low value of lattice thermal conductivity. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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Research was done on electrical conductivity and thermal conductivity of $ AgSbSe_{2} $ in the temperature range of 80–330 K. It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of $ AgSbSe_{2} $ leads to the low value of lattice thermal conductivity. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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It was demonstrated that charge transfer in $ AgSbSe_{2} $ is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of $ AgSbSe_{2} $ leads to the low value of lattice thermal conductivity.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">thermoelectric material</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">hopping conductivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">thermal conductivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">defects</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Saddinova, A. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aliyeva, A. 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