Characteristics of silicon carbide detectors
Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric c...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gurov, Yu. B. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Inc. 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Instruments and experimental techniques - Pleiades Publishing, 1959, 58(2015), 1 vom: Jan., Seite 22-24 |
|---|---|
| Übergeordnetes Werk: |
volume:58 ; year:2015 ; number:1 ; month:01 ; pages:22-24 |
| Links: |
|---|
| DOI / URN: |
10.1134/S0020441215010054 |
|---|
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OLC2034155769 |
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| 520 | |a Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given. | ||
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10.1134/S0020441215010054 doi (DE-627)OLC2034155769 (DE-He213)S0020441215010054-p DE-627 ger DE-627 rakwb eng 620 VZ 11 ssgn Gurov, Yu. B. verfasserin aut Characteristics of silicon carbide detectors 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2015 Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given. Epitaxial Layer Boron Carbide Wide Energy Range Charge Collection Efficiency High Specific Resistance Rozov, S. V. aut Sandukovsky, V. G. aut Yakushev, E. A. aut Hrubcin, L. aut Zat’ko, B. aut Enthalten in Instruments and experimental techniques Pleiades Publishing, 1959 58(2015), 1 vom: Jan., Seite 22-24 (DE-627)129603007 (DE-600)241643-8 (DE-576)015096815 0020-4412 nnns volume:58 year:2015 number:1 month:01 pages:22-24 https://doi.org/10.1134/S0020441215010054 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 58 2015 1 01 22-24 |
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10.1134/S0020441215010054 doi (DE-627)OLC2034155769 (DE-He213)S0020441215010054-p DE-627 ger DE-627 rakwb eng 620 VZ 11 ssgn Gurov, Yu. B. verfasserin aut Characteristics of silicon carbide detectors 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2015 Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given. Epitaxial Layer Boron Carbide Wide Energy Range Charge Collection Efficiency High Specific Resistance Rozov, S. V. aut Sandukovsky, V. G. aut Yakushev, E. A. aut Hrubcin, L. aut Zat’ko, B. aut Enthalten in Instruments and experimental techniques Pleiades Publishing, 1959 58(2015), 1 vom: Jan., Seite 22-24 (DE-627)129603007 (DE-600)241643-8 (DE-576)015096815 0020-4412 nnns volume:58 year:2015 number:1 month:01 pages:22-24 https://doi.org/10.1134/S0020441215010054 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 58 2015 1 01 22-24 |
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10.1134/S0020441215010054 doi (DE-627)OLC2034155769 (DE-He213)S0020441215010054-p DE-627 ger DE-627 rakwb eng 620 VZ 11 ssgn Gurov, Yu. B. verfasserin aut Characteristics of silicon carbide detectors 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2015 Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given. Epitaxial Layer Boron Carbide Wide Energy Range Charge Collection Efficiency High Specific Resistance Rozov, S. V. aut Sandukovsky, V. G. aut Yakushev, E. A. aut Hrubcin, L. aut Zat’ko, B. aut Enthalten in Instruments and experimental techniques Pleiades Publishing, 1959 58(2015), 1 vom: Jan., Seite 22-24 (DE-627)129603007 (DE-600)241643-8 (DE-576)015096815 0020-4412 nnns volume:58 year:2015 number:1 month:01 pages:22-24 https://doi.org/10.1134/S0020441215010054 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 58 2015 1 01 22-24 |
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10.1134/S0020441215010054 doi (DE-627)OLC2034155769 (DE-He213)S0020441215010054-p DE-627 ger DE-627 rakwb eng 620 VZ 11 ssgn Gurov, Yu. B. verfasserin aut Characteristics of silicon carbide detectors 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2015 Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given. Epitaxial Layer Boron Carbide Wide Energy Range Charge Collection Efficiency High Specific Resistance Rozov, S. V. aut Sandukovsky, V. G. aut Yakushev, E. A. aut Hrubcin, L. aut Zat’ko, B. aut Enthalten in Instruments and experimental techniques Pleiades Publishing, 1959 58(2015), 1 vom: Jan., Seite 22-24 (DE-627)129603007 (DE-600)241643-8 (DE-576)015096815 0020-4412 nnns volume:58 year:2015 number:1 month:01 pages:22-24 https://doi.org/10.1134/S0020441215010054 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 58 2015 1 01 22-24 |
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10.1134/S0020441215010054 doi (DE-627)OLC2034155769 (DE-He213)S0020441215010054-p DE-627 ger DE-627 rakwb eng 620 VZ 11 ssgn Gurov, Yu. B. verfasserin aut Characteristics of silicon carbide detectors 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2015 Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given. Epitaxial Layer Boron Carbide Wide Energy Range Charge Collection Efficiency High Specific Resistance Rozov, S. V. aut Sandukovsky, V. G. aut Yakushev, E. A. aut Hrubcin, L. aut Zat’ko, B. aut Enthalten in Instruments and experimental techniques Pleiades Publishing, 1959 58(2015), 1 vom: Jan., Seite 22-24 (DE-627)129603007 (DE-600)241643-8 (DE-576)015096815 0020-4412 nnns volume:58 year:2015 number:1 month:01 pages:22-24 https://doi.org/10.1134/S0020441215010054 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 58 2015 1 01 22-24 |
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Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given. © Pleiades Publishing, Inc. 2015 |
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Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given. © Pleiades Publishing, Inc. 2015 |
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B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characteristics of silicon carbide detectors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Inc. 2015</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A procedure for manufacturing detectors (with a diameter of ∼1 mm and thickness of 0.1 mm) based on high-purity epitaxial layers of 4H-SiC polytype is described, and results of investigation of their parameters are presented. It is shown that the designed detectors have good spectrometric characteristics in α particle detection in a wide energy range. The measured 241Am γ ray spectra are also given.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Epitaxial Layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Boron Carbide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Wide Energy Range</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Charge Collection Efficiency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">High Specific Resistance</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rozov, S. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sandukovsky, V. 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