Spectral Ellipsometry Study of Silicon Surfaces Implanted with Oxygen and Helium Ions
Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·$ 10^{14} $–3.7·$ 10^{16} $ ions/$ cm^{2} $ and helium ions in the range 6·$ 10^{16} $–6·$ 10^{17} $ ions/$ cm^{2} $ with energy 40 keV at constant ion current density 2 μA/$ cm^{...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bazarov, V. V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of applied spectroscopy - Springer US, 1966, 86(2019), 1 vom: März, Seite 134-137 |
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| Übergeordnetes Werk: |
volume:86 ; year:2019 ; number:1 ; month:03 ; pages:134-137 |
| Links: |
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| DOI / URN: |
10.1007/s10812-019-00793-6 |
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OLC2034690648 |
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| 520 | |a Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·$ 10^{14} $–3.7·$ 10^{16} $ ions/$ cm^{2} $ and helium ions in the range 6·$ 10^{16} $–6·$ 10^{17} $ ions/$ cm^{2} $ with energy 40 keV at constant ion current density 2 μA/$ cm^{2} $. The irradiated substrates were at room temperature. Curves are shown for the dependence of the thickness of the implanted layer in the irradiated plates and the dependence of the extent of amorphization of this layer on the ion implantation dose. | ||
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10.1007/s10812-019-00793-6 doi (DE-627)OLC2034690648 (DE-He213)s10812-019-00793-6-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Bazarov, V. V. verfasserin aut Spectral Ellipsometry Study of Silicon Surfaces Implanted with Oxygen and Helium Ions 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·$ 10^{14} $–3.7·$ 10^{16} $ ions/$ cm^{2} $ and helium ions in the range 6·$ 10^{16} $–6·$ 10^{17} $ ions/$ cm^{2} $ with energy 40 keV at constant ion current density 2 μA/$ cm^{2} $. The irradiated substrates were at room temperature. Curves are shown for the dependence of the thickness of the implanted layer in the irradiated plates and the dependence of the extent of amorphization of this layer on the ion implantation dose. amorphous silicon ion implantation spectral ellipsometry Nuzhdin, V. I. aut Valeev, V. F. aut Lyadov, N. M. aut Enthalten in Journal of applied spectroscopy Springer US, 1966 86(2019), 1 vom: März, Seite 134-137 (DE-627)129972495 (DE-600)410515-1 (DE-576)015535800 0021-9037 nnns volume:86 year:2019 number:1 month:03 pages:134-137 https://doi.org/10.1007/s10812-019-00793-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 AR 86 2019 1 03 134-137 |
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Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·$ 10^{14} $–3.7·$ 10^{16} $ ions/$ cm^{2} $ and helium ions in the range 6·$ 10^{16} $–6·$ 10^{17} $ ions/$ cm^{2} $ with energy 40 keV at constant ion current density 2 μA/$ cm^{2} $. The irradiated substrates were at room temperature. Curves are shown for the dependence of the thickness of the implanted layer in the irradiated plates and the dependence of the extent of amorphization of this layer on the ion implantation dose. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·$ 10^{14} $–3.7·$ 10^{16} $ ions/$ cm^{2} $ and helium ions in the range 6·$ 10^{16} $–6·$ 10^{17} $ ions/$ cm^{2} $ with energy 40 keV at constant ion current density 2 μA/$ cm^{2} $. The irradiated substrates were at room temperature. Curves are shown for the dependence of the thickness of the implanted layer in the irradiated plates and the dependence of the extent of amorphization of this layer on the ion implantation dose. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·$ 10^{14} $–3.7·$ 10^{16} $ ions/$ cm^{2} $ and helium ions in the range 6·$ 10^{16} $–6·$ 10^{17} $ ions/$ cm^{2} $ with energy 40 keV at constant ion current density 2 μA/$ cm^{2} $. The irradiated substrates were at room temperature. Curves are shown for the dependence of the thickness of the implanted layer in the irradiated plates and the dependence of the extent of amorphization of this layer on the ion implantation dose. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2034690648</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503111625.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2019 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10812-019-00793-6</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2034690648</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10812-019-00793-6-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">11</subfield><subfield code="2">ssgn</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bazarov, V. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Spectral Ellipsometry Study of Silicon Surfaces Implanted with Oxygen and Helium Ions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC, part of Springer Nature 2019</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·$ 10^{14} $–3.7·$ 10^{16} $ ions/$ cm^{2} $ and helium ions in the range 6·$ 10^{16} $–6·$ 10^{17} $ ions/$ cm^{2} $ with energy 40 keV at constant ion current density 2 μA/$ cm^{2} $. 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