Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds
The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 cent...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Khomich, A. A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of applied spectroscopy - Springer US, 1966, 86(2019), 4 vom: Sept., Seite 597-605 |
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| Übergeordnetes Werk: |
volume:86 ; year:2019 ; number:4 ; month:09 ; pages:597-605 |
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| DOI / URN: |
10.1007/s10812-019-00865-7 |
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| 520 | |a The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. | ||
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| 700 | 1 | |a Khomich, A. V. |4 aut | |
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10.1007/s10812-019-00865-7 doi (DE-627)OLC2034691687 (DE-He213)s10812-019-00865-7-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond photoluminescence zero-phonon line neutron irradiation ion implantation defect Khmelnitskii, R. A. aut Poklonskaya, O. N. aut Averin, A. A. aut Bokova-Sirosh, S. N. aut Poklonskii, N. A. aut Ralchenko, V. G. aut Khomich, A. V. aut Enthalten in Journal of applied spectroscopy Springer US, 1966 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)129972495 (DE-600)410515-1 (DE-576)015535800 0021-9037 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 AR 86 2019 4 09 597-605 |
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10.1007/s10812-019-00865-7 doi (DE-627)OLC2034691687 (DE-He213)s10812-019-00865-7-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond photoluminescence zero-phonon line neutron irradiation ion implantation defect Khmelnitskii, R. A. aut Poklonskaya, O. N. aut Averin, A. A. aut Bokova-Sirosh, S. N. aut Poklonskii, N. A. aut Ralchenko, V. G. aut Khomich, A. V. aut Enthalten in Journal of applied spectroscopy Springer US, 1966 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)129972495 (DE-600)410515-1 (DE-576)015535800 0021-9037 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 AR 86 2019 4 09 597-605 |
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10.1007/s10812-019-00865-7 doi (DE-627)OLC2034691687 (DE-He213)s10812-019-00865-7-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond photoluminescence zero-phonon line neutron irradiation ion implantation defect Khmelnitskii, R. A. aut Poklonskaya, O. N. aut Averin, A. A. aut Bokova-Sirosh, S. N. aut Poklonskii, N. A. aut Ralchenko, V. G. aut Khomich, A. V. aut Enthalten in Journal of applied spectroscopy Springer US, 1966 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)129972495 (DE-600)410515-1 (DE-576)015535800 0021-9037 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 AR 86 2019 4 09 597-605 |
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10.1007/s10812-019-00865-7 doi (DE-627)OLC2034691687 (DE-He213)s10812-019-00865-7-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond photoluminescence zero-phonon line neutron irradiation ion implantation defect Khmelnitskii, R. A. aut Poklonskaya, O. N. aut Averin, A. A. aut Bokova-Sirosh, S. N. aut Poklonskii, N. A. aut Ralchenko, V. G. aut Khomich, A. V. aut Enthalten in Journal of applied spectroscopy Springer US, 1966 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)129972495 (DE-600)410515-1 (DE-576)015535800 0021-9037 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 AR 86 2019 4 09 597-605 |
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10.1007/s10812-019-00865-7 doi (DE-627)OLC2034691687 (DE-He213)s10812-019-00865-7-p DE-627 ger DE-627 rakwb eng 530 VZ 11 ssgn Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond photoluminescence zero-phonon line neutron irradiation ion implantation defect Khmelnitskii, R. A. aut Poklonskaya, O. N. aut Averin, A. A. aut Bokova-Sirosh, S. N. aut Poklonskii, N. A. aut Ralchenko, V. G. aut Khomich, A. V. aut Enthalten in Journal of applied spectroscopy Springer US, 1966 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)129972495 (DE-600)410515-1 (DE-576)015535800 0021-9037 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE GBV_ILN_70 AR 86 2019 4 09 597-605 |
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Khomich, A. A. Khmelnitskii, R. A. Poklonskaya, O. N. Averin, A. A. Bokova-Sirosh, S. N. Poklonskii, N. A. Ralchenko, V. G. Khomich, A. V. |
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photoluminescence spectra of the 580-nm center in irradiated diamonds |
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Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds |
| abstract |
The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
| abstractGer |
The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
| abstract_unstemmed |
The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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| title_short |
Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds |
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https://doi.org/10.1007/s10812-019-00865-7 |
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| author2 |
Khmelnitskii, R. A. Poklonskaya, O. N. Averin, A. A. Bokova-Sirosh, S. N. Poklonskii, N. A. Ralchenko, V. G. Khomich, A. V. |
| author2Str |
Khmelnitskii, R. A. Poklonskaya, O. N. Averin, A. A. Bokova-Sirosh, S. N. Poklonskii, N. A. Ralchenko, V. G. Khomich, A. V. |
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129972495 |
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| doi_str |
10.1007/s10812-019-00865-7 |
| up_date |
2024-07-03T22:02:35.700Z |
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1803597020608331776 |
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