Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications
Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Guo, Maoxiang [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Microsystem technologies - Springer-Verlag, 1994, 19(2013), 7 vom: 11. Jan., Seite 1097-1103 |
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| Übergeordnetes Werk: |
volume:19 ; year:2013 ; number:7 ; day:11 ; month:01 ; pages:1097-1103 |
| Links: |
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| DOI / URN: |
10.1007/s00542-012-1720-9 |
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OLC2034934814 |
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| 520 | |a Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. | ||
| 650 | 4 | |a Trench | |
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| 700 | 1 | |a Mu, Jiliang |4 aut | |
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| 700 | 1 | |a Xiong, Jijun |4 aut | |
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10.1007/s00542-012-1720-9 doi (DE-627)OLC2034934814 (DE-He213)s00542-012-1720-9-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Guo, Maoxiang verfasserin aut Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. Trench High Aspect Ratio Etching Pattern Single Crystal Silicon Substrate Etching Cycle Chou, Xiujian aut Mu, Jiliang aut Liu, Bing aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer-Verlag, 1994 19(2013), 7 vom: 11. Jan., Seite 1097-1103 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:19 year:2013 number:7 day:11 month:01 pages:1097-1103 https://doi.org/10.1007/s00542-012-1720-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 19 2013 7 11 01 1097-1103 |
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10.1007/s00542-012-1720-9 doi (DE-627)OLC2034934814 (DE-He213)s00542-012-1720-9-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Guo, Maoxiang verfasserin aut Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. Trench High Aspect Ratio Etching Pattern Single Crystal Silicon Substrate Etching Cycle Chou, Xiujian aut Mu, Jiliang aut Liu, Bing aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer-Verlag, 1994 19(2013), 7 vom: 11. Jan., Seite 1097-1103 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:19 year:2013 number:7 day:11 month:01 pages:1097-1103 https://doi.org/10.1007/s00542-012-1720-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 19 2013 7 11 01 1097-1103 |
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10.1007/s00542-012-1720-9 doi (DE-627)OLC2034934814 (DE-He213)s00542-012-1720-9-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Guo, Maoxiang verfasserin aut Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. Trench High Aspect Ratio Etching Pattern Single Crystal Silicon Substrate Etching Cycle Chou, Xiujian aut Mu, Jiliang aut Liu, Bing aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer-Verlag, 1994 19(2013), 7 vom: 11. Jan., Seite 1097-1103 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:19 year:2013 number:7 day:11 month:01 pages:1097-1103 https://doi.org/10.1007/s00542-012-1720-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 19 2013 7 11 01 1097-1103 |
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10.1007/s00542-012-1720-9 doi (DE-627)OLC2034934814 (DE-He213)s00542-012-1720-9-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Guo, Maoxiang verfasserin aut Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. Trench High Aspect Ratio Etching Pattern Single Crystal Silicon Substrate Etching Cycle Chou, Xiujian aut Mu, Jiliang aut Liu, Bing aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer-Verlag, 1994 19(2013), 7 vom: 11. Jan., Seite 1097-1103 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:19 year:2013 number:7 day:11 month:01 pages:1097-1103 https://doi.org/10.1007/s00542-012-1720-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 19 2013 7 11 01 1097-1103 |
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10.1007/s00542-012-1720-9 doi (DE-627)OLC2034934814 (DE-He213)s00542-012-1720-9-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Guo, Maoxiang verfasserin aut Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. Trench High Aspect Ratio Etching Pattern Single Crystal Silicon Substrate Etching Cycle Chou, Xiujian aut Mu, Jiliang aut Liu, Bing aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer-Verlag, 1994 19(2013), 7 vom: 11. Jan., Seite 1097-1103 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:19 year:2013 number:7 day:11 month:01 pages:1097-1103 https://doi.org/10.1007/s00542-012-1720-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 19 2013 7 11 01 1097-1103 |
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Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications |
| abstract |
Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. © Springer-Verlag Berlin Heidelberg 2013 |
| abstractGer |
Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. © Springer-Verlag Berlin Heidelberg 2013 |
| abstract_unstemmed |
Abstract The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished. © Springer-Verlag Berlin Heidelberg 2013 |
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| title_short |
Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications |
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https://doi.org/10.1007/s00542-012-1720-9 |
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Chou, Xiujian Mu, Jiliang Liu, Bing Xiong, Jijun |
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Chou, Xiujian Mu, Jiliang Liu, Bing Xiong, Jijun |
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2024-07-03T23:05:09.987Z |
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