Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient
Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant l...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Günschmann, S. [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Microsystem technologies - Springer Berlin Heidelberg, 1994, 21(2015), 5 vom: 07. Feb., Seite 1029-1034 |
|---|---|
| Übergeordnetes Werk: |
volume:21 ; year:2015 ; number:5 ; day:07 ; month:02 ; pages:1029-1034 |
| Links: |
|---|
| DOI / URN: |
10.1007/s00542-015-2434-6 |
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OLC2034940024 |
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| 520 | |a Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. | ||
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| 700 | 1 | |a Müller, J. |4 aut | |
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10.1007/s00542-015-2434-6 doi (DE-627)OLC2034940024 (DE-He213)s00542-015-2434-6-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Günschmann, S. verfasserin aut Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. Bonding Strength Ball Valve Fluid Channel Anodic Bonding Maximum Peak Temperature Fischer, M. aut Mannebach, H. aut Steffensky, J. aut Müller, J. aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2015), 5 vom: 07. Feb., Seite 1029-1034 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2015 number:5 day:07 month:02 pages:1029-1034 https://doi.org/10.1007/s00542-015-2434-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2015 5 07 02 1029-1034 |
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10.1007/s00542-015-2434-6 doi (DE-627)OLC2034940024 (DE-He213)s00542-015-2434-6-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Günschmann, S. verfasserin aut Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. Bonding Strength Ball Valve Fluid Channel Anodic Bonding Maximum Peak Temperature Fischer, M. aut Mannebach, H. aut Steffensky, J. aut Müller, J. aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2015), 5 vom: 07. Feb., Seite 1029-1034 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2015 number:5 day:07 month:02 pages:1029-1034 https://doi.org/10.1007/s00542-015-2434-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2015 5 07 02 1029-1034 |
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10.1007/s00542-015-2434-6 doi (DE-627)OLC2034940024 (DE-He213)s00542-015-2434-6-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Günschmann, S. verfasserin aut Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. Bonding Strength Ball Valve Fluid Channel Anodic Bonding Maximum Peak Temperature Fischer, M. aut Mannebach, H. aut Steffensky, J. aut Müller, J. aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2015), 5 vom: 07. Feb., Seite 1029-1034 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2015 number:5 day:07 month:02 pages:1029-1034 https://doi.org/10.1007/s00542-015-2434-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2015 5 07 02 1029-1034 |
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10.1007/s00542-015-2434-6 doi (DE-627)OLC2034940024 (DE-He213)s00542-015-2434-6-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Günschmann, S. verfasserin aut Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. Bonding Strength Ball Valve Fluid Channel Anodic Bonding Maximum Peak Temperature Fischer, M. aut Mannebach, H. aut Steffensky, J. aut Müller, J. aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2015), 5 vom: 07. Feb., Seite 1029-1034 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2015 number:5 day:07 month:02 pages:1029-1034 https://doi.org/10.1007/s00542-015-2434-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2015 5 07 02 1029-1034 |
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10.1007/s00542-015-2434-6 doi (DE-627)OLC2034940024 (DE-He213)s00542-015-2434-6-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Günschmann, S. verfasserin aut Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. Bonding Strength Ball Valve Fluid Channel Anodic Bonding Maximum Peak Temperature Fischer, M. aut Mannebach, H. aut Steffensky, J. aut Müller, J. aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2015), 5 vom: 07. Feb., Seite 1029-1034 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2015 number:5 day:07 month:02 pages:1029-1034 https://doi.org/10.1007/s00542-015-2434-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2015 5 07 02 1029-1034 |
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silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient |
| title_auth |
Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient |
| abstract |
Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. © Springer-Verlag Berlin Heidelberg 2015 |
| abstractGer |
Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. © Springer-Verlag Berlin Heidelberg 2015 |
| abstract_unstemmed |
Abstract This paper presents a new bonding procedure for thick silicon wafers. Those wafers are less flexible and have usually a larger wafer bow. That implicates that standard bonding techniques, such as silicon fusion bonding or anodic bonding, produce non satisfactory yield results. A compliant layer is required to overcome this problem. For the new bonding principle, silicon wafers are structured by a self-masking deep reactive ion etching process. Thereby a forming of needle-shaped nanostructures (known as Black Silicon) on the surface is generated. Between both wafers a green LTCC (low temperature cofired ceramic) foil was placed which assumes multiple functions. The foil is able to compensate the wafer bow, is easy to structure and leads to a quasimonolithic compound after pressure assisted sintering. In the paper the fabrication steps for bonding are explained in detail, especially the adjustment of flexible and unflexible substrates. The interface and the mechanical properties were analyzed and discussed. © Springer-Verlag Berlin Heidelberg 2015 |
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| title_short |
Silicon–ceramic–silicon-wafercompound fabricated by using nanostructured silicon surfaces and a ceramic with adapted thermal expansion coefficient |
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https://doi.org/10.1007/s00542-015-2434-6 |
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| author2 |
Fischer, M. Mannebach, H. Steffensky, J. Müller, J. |
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Fischer, M. Mannebach, H. Steffensky, J. Müller, J. |
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| up_date |
2024-07-03T23:06:41.499Z |
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