A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch
Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hangi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Angira, Mahesh [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2014 |
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| Übergeordnetes Werk: |
Enthalten in: Microsystem technologies - Springer Berlin Heidelberg, 1994, 21(2014), 10 vom: 26. Nov., Seite 2259-2264 |
|---|---|
| Übergeordnetes Werk: |
volume:21 ; year:2014 ; number:10 ; day:26 ; month:11 ; pages:2259-2264 |
| Links: |
|---|
| DOI / URN: |
10.1007/s00542-014-2378-2 |
|---|
| Katalog-ID: |
OLC203494111X |
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| 520 | |a Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. | ||
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10.1007/s00542-014-2378-2 doi (DE-627)OLC203494111X (DE-He213)s00542-014-2378-2-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Angira, Mahesh verfasserin aut A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. Insertion Loss Return Loss Bridge Structure Capacitive Switch Conventional Switch Rangra, Kamaljit aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2014), 10 vom: 26. Nov., Seite 2259-2264 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2014 number:10 day:26 month:11 pages:2259-2264 https://doi.org/10.1007/s00542-014-2378-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2014 10 26 11 2259-2264 |
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10.1007/s00542-014-2378-2 doi (DE-627)OLC203494111X (DE-He213)s00542-014-2378-2-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Angira, Mahesh verfasserin aut A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. Insertion Loss Return Loss Bridge Structure Capacitive Switch Conventional Switch Rangra, Kamaljit aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2014), 10 vom: 26. Nov., Seite 2259-2264 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2014 number:10 day:26 month:11 pages:2259-2264 https://doi.org/10.1007/s00542-014-2378-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2014 10 26 11 2259-2264 |
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10.1007/s00542-014-2378-2 doi (DE-627)OLC203494111X (DE-He213)s00542-014-2378-2-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Angira, Mahesh verfasserin aut A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. Insertion Loss Return Loss Bridge Structure Capacitive Switch Conventional Switch Rangra, Kamaljit aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2014), 10 vom: 26. Nov., Seite 2259-2264 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2014 number:10 day:26 month:11 pages:2259-2264 https://doi.org/10.1007/s00542-014-2378-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2014 10 26 11 2259-2264 |
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10.1007/s00542-014-2378-2 doi (DE-627)OLC203494111X (DE-He213)s00542-014-2378-2-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Angira, Mahesh verfasserin aut A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. Insertion Loss Return Loss Bridge Structure Capacitive Switch Conventional Switch Rangra, Kamaljit aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2014), 10 vom: 26. Nov., Seite 2259-2264 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2014 number:10 day:26 month:11 pages:2259-2264 https://doi.org/10.1007/s00542-014-2378-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2014 10 26 11 2259-2264 |
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10.1007/s00542-014-2378-2 doi (DE-627)OLC203494111X (DE-He213)s00542-014-2378-2-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Angira, Mahesh verfasserin aut A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2014 Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. Insertion Loss Return Loss Bridge Structure Capacitive Switch Conventional Switch Rangra, Kamaljit aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 21(2014), 10 vom: 26. Nov., Seite 2259-2264 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:21 year:2014 number:10 day:26 month:11 pages:2259-2264 https://doi.org/10.1007/s00542-014-2378-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 21 2014 10 26 11 2259-2264 |
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Angira, Mahesh Rangra, Kamaljit |
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Angira, Mahesh |
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10.1007/s00542-014-2378-2 |
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a low insertion loss, multi-band, fixed central capacitor based rf-mems switch |
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A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch |
| abstract |
Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. © Springer-Verlag Berlin Heidelberg 2014 |
| abstractGer |
Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. © Springer-Verlag Berlin Heidelberg 2014 |
| abstract_unstemmed |
Abstract This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, switch consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance, whereas the free ends of the cantilevers are hanging over the ground plane of the CPW. The net up-state capacitance thus can be approximately determined from the area of overlap between the ground plane and free ends of cantilevers rather than the central overlap area as in the case of conventional movable bridge based approach. Further, the switch is used to inductively tune the isolation peaks in C and X bands i.e. 44.53 dB at 4.5 GHz and 51.08 dB at 9.8 GHz, when either or both cantilevers are electro-statically actuated to the down-state position. The device with movable bridge has isolation peak only at a single frequency in X band. Device shows an insertion loss less than 0.15 dB, a return loss below 21.38 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the equivalent conventional switch with movable bridge. In addition, improvement of around 3.5 times in the bandwidth and 50 % reduction in the pull-in voltage has also been achieved. The designed switch can be useful at device and sub-system level for the future multi-band communication applications. © Springer-Verlag Berlin Heidelberg 2014 |
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A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch |
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