Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applications
Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Liang, Ting [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Microsystem technologies - Springer Berlin Heidelberg, 1994, 23(2015), 1 vom: 26. Okt., Seite 225-229 |
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| Übergeordnetes Werk: |
volume:23 ; year:2015 ; number:1 ; day:26 ; month:10 ; pages:225-229 |
| Links: |
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| DOI / URN: |
10.1007/s00542-015-2710-5 |
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OLC2034945247 |
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| 520 | |a Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. | ||
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10.1007/s00542-015-2710-5 doi (DE-627)OLC2034945247 (DE-He213)s00542-015-2710-5-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Liang, Ting verfasserin aut Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applications 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. Intermediate Layer Bonding Interface Bonding Process Bonding Mechanism Direct Bonding Wang, Xinxin aut Jia, Pinggang aut Zhang, Wendong aut Xue, Chenyang aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 23(2015), 1 vom: 26. Okt., Seite 225-229 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:23 year:2015 number:1 day:26 month:10 pages:225-229 https://doi.org/10.1007/s00542-015-2710-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 23 2015 1 26 10 225-229 |
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10.1007/s00542-015-2710-5 doi (DE-627)OLC2034945247 (DE-He213)s00542-015-2710-5-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Liang, Ting verfasserin aut Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applications 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. Intermediate Layer Bonding Interface Bonding Process Bonding Mechanism Direct Bonding Wang, Xinxin aut Jia, Pinggang aut Zhang, Wendong aut Xue, Chenyang aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 23(2015), 1 vom: 26. Okt., Seite 225-229 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:23 year:2015 number:1 day:26 month:10 pages:225-229 https://doi.org/10.1007/s00542-015-2710-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 23 2015 1 26 10 225-229 |
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10.1007/s00542-015-2710-5 doi (DE-627)OLC2034945247 (DE-He213)s00542-015-2710-5-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Liang, Ting verfasserin aut Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applications 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. Intermediate Layer Bonding Interface Bonding Process Bonding Mechanism Direct Bonding Wang, Xinxin aut Jia, Pinggang aut Zhang, Wendong aut Xue, Chenyang aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 23(2015), 1 vom: 26. Okt., Seite 225-229 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:23 year:2015 number:1 day:26 month:10 pages:225-229 https://doi.org/10.1007/s00542-015-2710-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 23 2015 1 26 10 225-229 |
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10.1007/s00542-015-2710-5 doi (DE-627)OLC2034945247 (DE-He213)s00542-015-2710-5-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Liang, Ting verfasserin aut Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applications 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. Intermediate Layer Bonding Interface Bonding Process Bonding Mechanism Direct Bonding Wang, Xinxin aut Jia, Pinggang aut Zhang, Wendong aut Xue, Chenyang aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 23(2015), 1 vom: 26. Okt., Seite 225-229 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:23 year:2015 number:1 day:26 month:10 pages:225-229 https://doi.org/10.1007/s00542-015-2710-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 23 2015 1 26 10 225-229 |
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10.1007/s00542-015-2710-5 doi (DE-627)OLC2034945247 (DE-He213)s00542-015-2710-5-p DE-627 ger DE-627 rakwb eng 620 VZ 510 VZ Liang, Ting verfasserin aut Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applications 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. Intermediate Layer Bonding Interface Bonding Process Bonding Mechanism Direct Bonding Wang, Xinxin aut Jia, Pinggang aut Zhang, Wendong aut Xue, Chenyang aut Xiong, Jijun aut Enthalten in Microsystem technologies Springer Berlin Heidelberg, 1994 23(2015), 1 vom: 26. Okt., Seite 225-229 (DE-627)182644278 (DE-600)1223008-X (DE-576)045302146 0946-7076 nnns volume:23 year:2015 number:1 day:26 month:10 pages:225-229 https://doi.org/10.1007/s00542-015-2710-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT SSG-OPC-MAT GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_2048 GBV_ILN_4277 AR 23 2015 1 26 10 225-229 |
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Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applications |
| abstract |
Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. © Springer-Verlag Berlin Heidelberg 2015 |
| abstractGer |
Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. © Springer-Verlag Berlin Heidelberg 2015 |
| abstract_unstemmed |
Abstract Bonded structures of 4H-SiC/4H-SiC with a cavity are fabricated based on direct bonding at different annealing processes, which meet the requirements for some MEMS devices in special potential applications (as the support structure of piezoresistive, fiber-optic or capacitive sensors, among others). The relationship between different annealing conditions and the tensile strength is investigated by the processing. The annealing parameters are optimized, including annealing temperature, applied load, and annealing time, with the best tensile strength of 2 MPa. The bonding interface of the bonded structures is observed by scanning electron microscopy, energy dispersive spectrometry and Raman spectroscopy, respectively. The bonding mechanism is discussed, researched, and shown to consist of fusion bonding as in SiC–$ SiO_{2} $–SiC microstructures and direct bonding like SiC–SiC microstructures. © Springer-Verlag Berlin Heidelberg 2015 |
| collection_details |
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| container_issue |
1 |
| title_short |
Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applications |
| url |
https://doi.org/10.1007/s00542-015-2710-5 |
| remote_bool |
false |
| author2 |
Wang, Xinxin Jia, Pinggang Zhang, Wendong Xue, Chenyang Xiong, Jijun |
| author2Str |
Wang, Xinxin Jia, Pinggang Zhang, Wendong Xue, Chenyang Xiong, Jijun |
| ppnlink |
182644278 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s00542-015-2710-5 |
| up_date |
2024-07-03T23:08:12.585Z |
| _version_ |
1803601148731457536 |
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