The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys
Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $...
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| Autor*in: |
Harte, G. A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1978 |
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| Schlagwörter: |
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| Anmerkung: |
© Plenum Publishing Corporation 1978 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of low temperature physics - Kluwer Academic Publishers, 1969, 31(1978), 5-6 vom: Juni, Seite 897-909 |
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| Übergeordnetes Werk: |
volume:31 ; year:1978 ; number:5-6 ; month:06 ; pages:897-909 |
| Links: |
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| DOI / URN: |
10.1007/BF00116057 |
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| Katalog-ID: |
OLC203674804X |
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| 520 | |a Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. | ||
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10.1007/BF00116057 doi (DE-627)OLC203674804X (DE-He213)BF00116057-p DE-627 ger DE-627 rakwb eng 530 VZ Harte, G. A. verfasserin aut The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1978 Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. Magnetic Material Fermi Level Opposite Effect Effective Mass Fermi Surface Priestley, M. G. aut Vuillemin, J. J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers, 1969 31(1978), 5-6 vom: Juni, Seite 897-909 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:31 year:1978 number:5-6 month:06 pages:897-909 https://doi.org/10.1007/BF00116057 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 31 1978 5-6 06 897-909 |
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10.1007/BF00116057 doi (DE-627)OLC203674804X (DE-He213)BF00116057-p DE-627 ger DE-627 rakwb eng 530 VZ Harte, G. A. verfasserin aut The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1978 Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. Magnetic Material Fermi Level Opposite Effect Effective Mass Fermi Surface Priestley, M. G. aut Vuillemin, J. J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers, 1969 31(1978), 5-6 vom: Juni, Seite 897-909 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:31 year:1978 number:5-6 month:06 pages:897-909 https://doi.org/10.1007/BF00116057 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 31 1978 5-6 06 897-909 |
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10.1007/BF00116057 doi (DE-627)OLC203674804X (DE-He213)BF00116057-p DE-627 ger DE-627 rakwb eng 530 VZ Harte, G. A. verfasserin aut The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1978 Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. Magnetic Material Fermi Level Opposite Effect Effective Mass Fermi Surface Priestley, M. G. aut Vuillemin, J. J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers, 1969 31(1978), 5-6 vom: Juni, Seite 897-909 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:31 year:1978 number:5-6 month:06 pages:897-909 https://doi.org/10.1007/BF00116057 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 31 1978 5-6 06 897-909 |
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10.1007/BF00116057 doi (DE-627)OLC203674804X (DE-He213)BF00116057-p DE-627 ger DE-627 rakwb eng 530 VZ Harte, G. A. verfasserin aut The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1978 Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. Magnetic Material Fermi Level Opposite Effect Effective Mass Fermi Surface Priestley, M. G. aut Vuillemin, J. J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers, 1969 31(1978), 5-6 vom: Juni, Seite 897-909 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:31 year:1978 number:5-6 month:06 pages:897-909 https://doi.org/10.1007/BF00116057 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 31 1978 5-6 06 897-909 |
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10.1007/BF00116057 doi (DE-627)OLC203674804X (DE-He213)BF00116057-p DE-627 ger DE-627 rakwb eng 530 VZ Harte, G. A. verfasserin aut The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys 1978 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1978 Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. Magnetic Material Fermi Level Opposite Effect Effective Mass Fermi Surface Priestley, M. G. aut Vuillemin, J. J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers, 1969 31(1978), 5-6 vom: Juni, Seite 897-909 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:31 year:1978 number:5-6 month:06 pages:897-909 https://doi.org/10.1007/BF00116057 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 31 1978 5-6 06 897-909 |
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Enthalten in Journal of low temperature physics 31(1978), 5-6 vom: Juni, Seite 897-909 volume:31 year:1978 number:5-6 month:06 pages:897-909 |
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Enthalten in Journal of low temperature physics 31(1978), 5-6 vom: Juni, Seite 897-909 volume:31 year:1978 number:5-6 month:06 pages:897-909 |
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530 VZ The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys Magnetic Material Fermi Level Opposite Effect Effective Mass Fermi Surface |
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the de haas-van alphen effect in sb(sn) and sb(te) alloys |
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The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys |
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Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. © Plenum Publishing Corporation 1978 |
| abstractGer |
Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. © Plenum Publishing Corporation 1978 |
| abstract_unstemmed |
Measurements have been made of the de Haas-van Alphen effect in Sb(Sn) alloys containing up to 0.58 at % Sn and Sb(Te) alloys with up to 0.26 at % Te. The maximum electron period in the bisectrix-trigonal plane increased from 14.66 × $ 10^{−7} $ $ G^{−1} $ in pure Sb to 68.0 × $ 10^{−7} $ $ G^{−1} $ in the most concentrated Sn-doped sample, whereas the maximum hole period decreased from 16.33 × $ 10^{−7} $ to 7.4 × $ 10^{−7} $ $ G^{−1} $. The Te doping had the opposite effect—increasing the number of electrons and decreasing the number of holes. The results of measurements of effective mass and Fermi surface area are found to be consistent with a rigid-band model of these dilute alloys. Both electron and hole bands are strongly nonparabolic and a two-band model is used to estimate that the gap below the electron pocket at L is 110 ± 25 meV. The Fermi levels of electrons and holes in Sb are estimated to be 150 ± 10 and 180 ± 40 meV, respectively. It is predicted that the electron pockets will be completely emptied for an alloy with 0.78 ± 0.07 at % Sn. Pseudopotential calculations suggest that the rigid-band model is a reasonable approximation in these dilute alloys. © Plenum Publishing Corporation 1978 |
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