Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields
Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes va...
Ausführliche Beschreibung
Autor*in: |
Mondal, M. [verfasserIn] |
---|
Format: |
Artikel |
---|---|
Sprache: |
Englisch |
Erschienen: |
1987 |
---|
Schlagwörter: |
---|
Anmerkung: |
© Plenum Publishing Corporation 1987 |
---|
Übergeordnetes Werk: |
Enthalten in: Journal of low temperature physics - Kluwer Academic Publishers-Plenum Publishers, 1969, 66(1987), 3-4 vom: Feb., Seite 131-143 |
---|---|
Übergeordnetes Werk: |
volume:66 ; year:1987 ; number:3-4 ; month:02 ; pages:131-143 |
Links: |
---|
DOI / URN: |
10.1007/BF00681816 |
---|
Katalog-ID: |
OLC2036761216 |
---|
LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | OLC2036761216 | ||
003 | DE-627 | ||
005 | 20230503143131.0 | ||
007 | tu | ||
008 | 200819s1987 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1007/BF00681816 |2 doi | |
035 | |a (DE-627)OLC2036761216 | ||
035 | |a (DE-He213)BF00681816-p | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 530 |q VZ |
100 | 1 | |a Mondal, M. |e verfasserin |4 aut | |
245 | 1 | 0 | |a Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields |
264 | 1 | |c 1987 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
500 | |a © Plenum Publishing Corporation 1987 | ||
520 | |a Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. | ||
650 | 4 | |a Magnetic Field | |
650 | 4 | |a Dispersion Relation | |
650 | 4 | |a Fermi Level | |
650 | 4 | |a Chalcopyrite | |
650 | 4 | |a Fermi Energy | |
700 | 1 | |a Chattopadhyay, N. |4 aut | |
700 | 1 | |a Ghatak, K. P. |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Journal of low temperature physics |d Kluwer Academic Publishers-Plenum Publishers, 1969 |g 66(1987), 3-4 vom: Feb., Seite 131-143 |w (DE-627)129546267 |w (DE-600)218311-0 |w (DE-576)014996642 |x 0022-2291 |7 nnns |
773 | 1 | 8 | |g volume:66 |g year:1987 |g number:3-4 |g month:02 |g pages:131-143 |
856 | 4 | 1 | |u https://doi.org/10.1007/BF00681816 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-PHY | ||
912 | |a GBV_ILN_11 | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_32 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_59 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_2006 | ||
912 | |a GBV_ILN_2185 | ||
912 | |a GBV_ILN_2192 | ||
912 | |a GBV_ILN_4046 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4700 | ||
951 | |a AR | ||
952 | |d 66 |j 1987 |e 3-4 |c 02 |h 131-143 |
author_variant |
m m mm n c nc k p g kp kpg |
---|---|
matchkey_str |
article:00222291:1987----::hoeiaaayiotefetveetomsiutahnimotrayhloyieeiodcosnhpe |
hierarchy_sort_str |
1987 |
publishDate |
1987 |
allfields |
10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143 |
spelling |
10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143 |
allfields_unstemmed |
10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143 |
allfieldsGer |
10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143 |
allfieldsSound |
10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143 |
language |
English |
source |
Enthalten in Journal of low temperature physics 66(1987), 3-4 vom: Feb., Seite 131-143 volume:66 year:1987 number:3-4 month:02 pages:131-143 |
sourceStr |
Enthalten in Journal of low temperature physics 66(1987), 3-4 vom: Feb., Seite 131-143 volume:66 year:1987 number:3-4 month:02 pages:131-143 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy |
dewey-raw |
530 |
isfreeaccess_bool |
false |
container_title |
Journal of low temperature physics |
authorswithroles_txt_mv |
Mondal, M. @@aut@@ Chattopadhyay, N. @@aut@@ Ghatak, K. P. @@aut@@ |
publishDateDaySort_date |
1987-02-01T00:00:00Z |
hierarchy_top_id |
129546267 |
dewey-sort |
3530 |
id |
OLC2036761216 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2036761216</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503143131.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s1987 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF00681816</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2036761216</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF00681816-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mondal, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1987</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Plenum Publishing Corporation 1987</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Magnetic Field</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dispersion Relation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Fermi Level</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chalcopyrite</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Fermi Energy</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chattopadhyay, N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ghatak, K. P.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of low temperature physics</subfield><subfield code="d">Kluwer Academic Publishers-Plenum Publishers, 1969</subfield><subfield code="g">66(1987), 3-4 vom: Feb., Seite 131-143</subfield><subfield code="w">(DE-627)129546267</subfield><subfield code="w">(DE-600)218311-0</subfield><subfield code="w">(DE-576)014996642</subfield><subfield code="x">0022-2291</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:66</subfield><subfield code="g">year:1987</subfield><subfield code="g">number:3-4</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:131-143</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF00681816</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_59</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2185</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2192</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">66</subfield><subfield code="j">1987</subfield><subfield code="e">3-4</subfield><subfield code="c">02</subfield><subfield code="h">131-143</subfield></datafield></record></collection>
|
author |
Mondal, M. |
spellingShingle |
Mondal, M. ddc 530 misc Magnetic Field misc Dispersion Relation misc Fermi Level misc Chalcopyrite misc Fermi Energy Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields |
authorStr |
Mondal, M. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)129546267 |
format |
Article |
dewey-ones |
530 - Physics |
delete_txt_mv |
keep |
author_role |
aut aut aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0022-2291 |
topic_title |
530 VZ Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy |
topic |
ddc 530 misc Magnetic Field misc Dispersion Relation misc Fermi Level misc Chalcopyrite misc Fermi Energy |
topic_unstemmed |
ddc 530 misc Magnetic Field misc Dispersion Relation misc Fermi Level misc Chalcopyrite misc Fermi Energy |
topic_browse |
ddc 530 misc Magnetic Field misc Dispersion Relation misc Fermi Level misc Chalcopyrite misc Fermi Energy |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
hierarchy_parent_title |
Journal of low temperature physics |
hierarchy_parent_id |
129546267 |
dewey-tens |
530 - Physics |
hierarchy_top_title |
Journal of low temperature physics |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 |
title |
Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields |
ctrlnum |
(DE-627)OLC2036761216 (DE-He213)BF00681816-p |
title_full |
Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields |
author_sort |
Mondal, M. |
journal |
Journal of low temperature physics |
journalStr |
Journal of low temperature physics |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
500 - Science |
recordtype |
marc |
publishDateSort |
1987 |
contenttype_str_mv |
txt |
container_start_page |
131 |
author_browse |
Mondal, M. Chattopadhyay, N. Ghatak, K. P. |
container_volume |
66 |
class |
530 VZ |
format_se |
Aufsätze |
author-letter |
Mondal, M. |
doi_str_mv |
10.1007/BF00681816 |
dewey-full |
530 |
title_sort |
theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields |
title_auth |
Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields |
abstract |
Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. © Plenum Publishing Corporation 1987 |
abstractGer |
Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. © Plenum Publishing Corporation 1987 |
abstract_unstemmed |
Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. © Plenum Publishing Corporation 1987 |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 |
container_issue |
3-4 |
title_short |
Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields |
url |
https://doi.org/10.1007/BF00681816 |
remote_bool |
false |
author2 |
Chattopadhyay, N. Ghatak, K. P. |
author2Str |
Chattopadhyay, N. Ghatak, K. P. |
ppnlink |
129546267 |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1007/BF00681816 |
up_date |
2024-07-04T04:07:45.356Z |
_version_ |
1803619994559315968 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2036761216</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503143131.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s1987 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF00681816</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2036761216</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF00681816-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mondal, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1987</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Plenum Publishing Corporation 1987</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Magnetic Field</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dispersion Relation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Fermi Level</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chalcopyrite</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Fermi Energy</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chattopadhyay, N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ghatak, K. P.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of low temperature physics</subfield><subfield code="d">Kluwer Academic Publishers-Plenum Publishers, 1969</subfield><subfield code="g">66(1987), 3-4 vom: Feb., Seite 131-143</subfield><subfield code="w">(DE-627)129546267</subfield><subfield code="w">(DE-600)218311-0</subfield><subfield code="w">(DE-576)014996642</subfield><subfield code="x">0022-2291</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:66</subfield><subfield code="g">year:1987</subfield><subfield code="g">number:3-4</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:131-143</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF00681816</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_59</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2185</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2192</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">66</subfield><subfield code="j">1987</subfield><subfield code="e">3-4</subfield><subfield code="c">02</subfield><subfield code="h">131-143</subfield></datafield></record></collection>
|
score |
7.400361 |