Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields

Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes va...
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Autor*in:	Mondal, M. [verfasserIn] Chattopadhyay, N. Ghatak, K. P.

Format:	Artikel
Sprache:	Englisch

Erschienen:	1987

Schlagwörter:	Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy

Anmerkung:	© Plenum Publishing Corporation 1987

Übergeordnetes Werk:	Enthalten in: Journal of low temperature physics - Kluwer Academic Publishers-Plenum Publishers, 1969, 66(1987), 3-4 vom: Feb., Seite 131-143
Übergeordnetes Werk:	volume:66 ; year:1987 ; number:3-4 ; month:02 ; pages:131-143

Links:	Volltext

DOI / URN:	10.1007/BF00681816

Katalog-ID:	OLC2036761216

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650		4	\|a Magnetic Field
650		4	\|a Dispersion Relation
650		4	\|a Fermi Level
650		4	\|a Chalcopyrite
650		4	\|a Fermi Energy
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allfields	10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143
spelling	10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143
allfields_unstemmed	10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143
allfieldsGer	10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143
allfieldsSound	10.1007/BF00681816 doi (DE-627)OLC2036761216 (DE-He213)BF00681816-p DE-627 ger DE-627 rakwb eng 530 VZ Mondal, M. verfasserin aut Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields 1987 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1987 Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. Magnetic Field Dispersion Relation Fermi Level Chalcopyrite Fermi Energy Chattopadhyay, N. aut Ghatak, K. P. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 66(1987), 3-4 vom: Feb., Seite 131-143 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:66 year:1987 number:3-4 month:02 pages:131-143 https://doi.org/10.1007/BF00681816 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 66 1987 3-4 02 131-143
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spellingShingle	Mondal, M. ddc 530 misc Magnetic Field misc Dispersion Relation misc Fermi Level misc Chalcopyrite misc Fermi Energy Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields
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title_sort	theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields
title_auth	Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields
abstract	Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. © Plenum Publishing Corporation 1987
abstractGer	Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. © Plenum Publishing Corporation 1987
abstract_unstemmed	Abstract An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-$ CdGeAs_{2} $ as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived. © Plenum Publishing Corporation 1987
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title_short	Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields
url	https://doi.org/10.1007/BF00681816
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author2	Chattopadhyay, N. Ghatak, K. P.
author2Str	Chattopadhyay, N. Ghatak, K. P.
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doi_str	10.1007/BF00681816
up_date	2024-07-04T04:07:45.356Z
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Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields

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