A silicon composite thermal and ionization X-ray detector
Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Stahle, C. K. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1993 |
|---|
| Anmerkung: |
© Plenum Publishing Corporation 1993 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of low temperature physics - Kluwer Academic Publishers-Plenum Publishers, 1969, 93(1993), 3-4 vom: Nov., Seite 411-416 |
|---|---|
| Übergeordnetes Werk: |
volume:93 ; year:1993 ; number:3-4 ; month:11 ; pages:411-416 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF00693453 |
|---|
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| 520 | |a Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. | ||
| 700 | 1 | |a Wouters, J. |4 aut | |
| 700 | 1 | |a Kelley, R. L. |4 aut | |
| 700 | 1 | |a Moseley, S. H. |4 aut | |
| 700 | 1 | |a Szymkowiak, A. E. |4 aut | |
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10.1007/BF00693453 doi (DE-627)OLC2036769713 (DE-He213)BF00693453-p DE-627 ger DE-627 rakwb eng 530 VZ Stahle, C. K. verfasserin aut A silicon composite thermal and ionization X-ray detector 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Wouters, J. aut Kelley, R. L. aut Moseley, S. H. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 93(1993), 3-4 vom: Nov., Seite 411-416 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:93 year:1993 number:3-4 month:11 pages:411-416 https://doi.org/10.1007/BF00693453 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 93 1993 3-4 11 411-416 |
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10.1007/BF00693453 doi (DE-627)OLC2036769713 (DE-He213)BF00693453-p DE-627 ger DE-627 rakwb eng 530 VZ Stahle, C. K. verfasserin aut A silicon composite thermal and ionization X-ray detector 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Wouters, J. aut Kelley, R. L. aut Moseley, S. H. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 93(1993), 3-4 vom: Nov., Seite 411-416 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:93 year:1993 number:3-4 month:11 pages:411-416 https://doi.org/10.1007/BF00693453 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 93 1993 3-4 11 411-416 |
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10.1007/BF00693453 doi (DE-627)OLC2036769713 (DE-He213)BF00693453-p DE-627 ger DE-627 rakwb eng 530 VZ Stahle, C. K. verfasserin aut A silicon composite thermal and ionization X-ray detector 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Wouters, J. aut Kelley, R. L. aut Moseley, S. H. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 93(1993), 3-4 vom: Nov., Seite 411-416 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:93 year:1993 number:3-4 month:11 pages:411-416 https://doi.org/10.1007/BF00693453 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 93 1993 3-4 11 411-416 |
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10.1007/BF00693453 doi (DE-627)OLC2036769713 (DE-He213)BF00693453-p DE-627 ger DE-627 rakwb eng 530 VZ Stahle, C. K. verfasserin aut A silicon composite thermal and ionization X-ray detector 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Wouters, J. aut Kelley, R. L. aut Moseley, S. H. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 93(1993), 3-4 vom: Nov., Seite 411-416 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:93 year:1993 number:3-4 month:11 pages:411-416 https://doi.org/10.1007/BF00693453 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 93 1993 3-4 11 411-416 |
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10.1007/BF00693453 doi (DE-627)OLC2036769713 (DE-He213)BF00693453-p DE-627 ger DE-627 rakwb eng 530 VZ Stahle, C. K. verfasserin aut A silicon composite thermal and ionization X-ray detector 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Wouters, J. aut Kelley, R. L. aut Moseley, S. H. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 93(1993), 3-4 vom: Nov., Seite 411-416 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:93 year:1993 number:3-4 month:11 pages:411-416 https://doi.org/10.1007/BF00693453 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 93 1993 3-4 11 411-416 |
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A silicon composite thermal and ionization X-ray detector |
| abstract |
Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. © Plenum Publishing Corporation 1993 |
| abstractGer |
Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. © Plenum Publishing Corporation 1993 |
| abstract_unstemmed |
Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. © Plenum Publishing Corporation 1993 |
| collection_details |
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| container_issue |
3-4 |
| title_short |
A silicon composite thermal and ionization X-ray detector |
| url |
https://doi.org/10.1007/BF00693453 |
| remote_bool |
false |
| author2 |
Wouters, J. Kelley, R. L. Moseley, S. H. Szymkowiak, A. E. |
| author2Str |
Wouters, J. Kelley, R. L. Moseley, S. H. Szymkowiak, A. E. |
| ppnlink |
129546267 |
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n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/BF00693453 |
| up_date |
2024-07-04T04:08:53.016Z |
| _version_ |
1803620065496530944 |
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7.399809 |