Electronic transport in $ RuO_{2} $-based thick film resistors at low temperatures
Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Roman, J. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1997 |
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| Schlagwörter: |
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| Anmerkung: |
© Plenum Publishing Corporation 1997 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of low temperature physics - Kluwer Academic Publishers-Plenum Publishers, 1969, 108(1997), 5-6 vom: Sept., Seite 373-382 |
|---|---|
| Übergeordnetes Werk: |
volume:108 ; year:1997 ; number:5-6 ; month:09 ; pages:373-382 |
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| DOI / URN: |
10.1007/BF02397680 |
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OLC2036779182 |
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| 520 | |a Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. | ||
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| 700 | 1 | |a Leib, J. |4 aut | |
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10.1007/BF02397680 doi (DE-627)OLC2036779182 (DE-He213)BF02397680-p DE-627 ger DE-627 rakwb eng 530 VZ Roman, J. verfasserin aut Electronic transport in $ RuO_{2} $-based thick film resistors at low temperatures 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1997 Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. Electrical Conductivity Simple Model Electronic Transport Charge Carrier Magnetic Material Pavlík, V. aut Flachbart, K. aut Adkins, C. J. aut Leib, J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 108(1997), 5-6 vom: Sept., Seite 373-382 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:108 year:1997 number:5-6 month:09 pages:373-382 https://doi.org/10.1007/BF02397680 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 108 1997 5-6 09 373-382 |
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10.1007/BF02397680 doi (DE-627)OLC2036779182 (DE-He213)BF02397680-p DE-627 ger DE-627 rakwb eng 530 VZ Roman, J. verfasserin aut Electronic transport in $ RuO_{2} $-based thick film resistors at low temperatures 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1997 Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. Electrical Conductivity Simple Model Electronic Transport Charge Carrier Magnetic Material Pavlík, V. aut Flachbart, K. aut Adkins, C. J. aut Leib, J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 108(1997), 5-6 vom: Sept., Seite 373-382 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:108 year:1997 number:5-6 month:09 pages:373-382 https://doi.org/10.1007/BF02397680 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 108 1997 5-6 09 373-382 |
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10.1007/BF02397680 doi (DE-627)OLC2036779182 (DE-He213)BF02397680-p DE-627 ger DE-627 rakwb eng 530 VZ Roman, J. verfasserin aut Electronic transport in $ RuO_{2} $-based thick film resistors at low temperatures 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1997 Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. Electrical Conductivity Simple Model Electronic Transport Charge Carrier Magnetic Material Pavlík, V. aut Flachbart, K. aut Adkins, C. J. aut Leib, J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 108(1997), 5-6 vom: Sept., Seite 373-382 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:108 year:1997 number:5-6 month:09 pages:373-382 https://doi.org/10.1007/BF02397680 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 108 1997 5-6 09 373-382 |
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10.1007/BF02397680 doi (DE-627)OLC2036779182 (DE-He213)BF02397680-p DE-627 ger DE-627 rakwb eng 530 VZ Roman, J. verfasserin aut Electronic transport in $ RuO_{2} $-based thick film resistors at low temperatures 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1997 Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. Electrical Conductivity Simple Model Electronic Transport Charge Carrier Magnetic Material Pavlík, V. aut Flachbart, K. aut Adkins, C. J. aut Leib, J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 108(1997), 5-6 vom: Sept., Seite 373-382 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:108 year:1997 number:5-6 month:09 pages:373-382 https://doi.org/10.1007/BF02397680 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 108 1997 5-6 09 373-382 |
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10.1007/BF02397680 doi (DE-627)OLC2036779182 (DE-He213)BF02397680-p DE-627 ger DE-627 rakwb eng 530 VZ Roman, J. verfasserin aut Electronic transport in $ RuO_{2} $-based thick film resistors at low temperatures 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1997 Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. Electrical Conductivity Simple Model Electronic Transport Charge Carrier Magnetic Material Pavlík, V. aut Flachbart, K. aut Adkins, C. J. aut Leib, J. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 108(1997), 5-6 vom: Sept., Seite 373-382 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:108 year:1997 number:5-6 month:09 pages:373-382 https://doi.org/10.1007/BF02397680 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 108 1997 5-6 09 373-382 |
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Electronic transport in $ RuO_{2} $-based thick film resistors at low temperatures |
| abstract |
Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. © Plenum Publishing Corporation 1997 |
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Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. © Plenum Publishing Corporation 1997 |
| abstract_unstemmed |
Abstract The electrical conductivity of various $ RuO_{2} $-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles. © Plenum Publishing Corporation 1997 |
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| title_short |
Electronic transport in $ RuO_{2} $-based thick film resistors at low temperatures |
| url |
https://doi.org/10.1007/BF02397680 |
| remote_bool |
false |
| author2 |
Pavlík, V. Flachbart, K. Adkins, C. J. Leib, J. |
| author2Str |
Pavlík, V. Flachbart, K. Adkins, C. J. Leib, J. |
| ppnlink |
129546267 |
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n |
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false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/BF02397680 |
| up_date |
2024-07-04T04:10:10.965Z |
| _version_ |
1803620147230932992 |
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