Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3
Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the dop...
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| Autor*in: |
Miyajima, N. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2001 |
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| Schlagwörter: |
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| Anmerkung: |
© Plenum Publishing Corporation 2001 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of low temperature physics - Kluwer Academic Publishers-Plenum Publishers, 1969, 123(2001), 3-4 vom: Mai, Seite 219-238 |
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| Übergeordnetes Werk: |
volume:123 ; year:2001 ; number:3-4 ; month:05 ; pages:219-238 |
| Links: |
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| DOI / URN: |
10.1023/A:1017541912810 |
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| Katalog-ID: |
OLC2036791182 |
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| 245 | 1 | 0 | |a Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3 |
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| 520 | |a Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. | ||
| 650 | 4 | |a Fermi Level | |
| 650 | 4 | |a Bi2Te3 | |
| 650 | 4 | |a Landau Level | |
| 650 | 4 | |a Lower Region | |
| 650 | 4 | |a State Spectrum | |
| 700 | 1 | |a Sasaki, M. |4 aut | |
| 700 | 1 | |a Negishi, H. |4 aut | |
| 700 | 1 | |a Inoue, M. |4 aut | |
| 700 | 1 | |a Kulbachinskii, V. A. |4 aut | |
| 700 | 1 | |a Kaminskii, A. Y. |4 aut | |
| 700 | 1 | |a Suga, K. |4 aut | |
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10.1023/A:1017541912810 doi (DE-627)OLC2036791182 (DE-He213)A:1017541912810-p DE-627 ger DE-627 rakwb eng 530 VZ Miyajima, N. verfasserin aut Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. Fermi Level Bi2Te3 Landau Level Lower Region State Spectrum Sasaki, M. aut Negishi, H. aut Inoue, M. aut Kulbachinskii, V. A. aut Kaminskii, A. Y. aut Suga, K. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 123(2001), 3-4 vom: Mai, Seite 219-238 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:123 year:2001 number:3-4 month:05 pages:219-238 https://doi.org/10.1023/A:1017541912810 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 123 2001 3-4 05 219-238 |
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10.1023/A:1017541912810 doi (DE-627)OLC2036791182 (DE-He213)A:1017541912810-p DE-627 ger DE-627 rakwb eng 530 VZ Miyajima, N. verfasserin aut Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. Fermi Level Bi2Te3 Landau Level Lower Region State Spectrum Sasaki, M. aut Negishi, H. aut Inoue, M. aut Kulbachinskii, V. A. aut Kaminskii, A. Y. aut Suga, K. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 123(2001), 3-4 vom: Mai, Seite 219-238 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:123 year:2001 number:3-4 month:05 pages:219-238 https://doi.org/10.1023/A:1017541912810 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 123 2001 3-4 05 219-238 |
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10.1023/A:1017541912810 doi (DE-627)OLC2036791182 (DE-He213)A:1017541912810-p DE-627 ger DE-627 rakwb eng 530 VZ Miyajima, N. verfasserin aut Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. Fermi Level Bi2Te3 Landau Level Lower Region State Spectrum Sasaki, M. aut Negishi, H. aut Inoue, M. aut Kulbachinskii, V. A. aut Kaminskii, A. Y. aut Suga, K. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 123(2001), 3-4 vom: Mai, Seite 219-238 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:123 year:2001 number:3-4 month:05 pages:219-238 https://doi.org/10.1023/A:1017541912810 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 123 2001 3-4 05 219-238 |
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10.1023/A:1017541912810 doi (DE-627)OLC2036791182 (DE-He213)A:1017541912810-p DE-627 ger DE-627 rakwb eng 530 VZ Miyajima, N. verfasserin aut Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. Fermi Level Bi2Te3 Landau Level Lower Region State Spectrum Sasaki, M. aut Negishi, H. aut Inoue, M. aut Kulbachinskii, V. A. aut Kaminskii, A. Y. aut Suga, K. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 123(2001), 3-4 vom: Mai, Seite 219-238 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:123 year:2001 number:3-4 month:05 pages:219-238 https://doi.org/10.1023/A:1017541912810 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 123 2001 3-4 05 219-238 |
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10.1023/A:1017541912810 doi (DE-627)OLC2036791182 (DE-He213)A:1017541912810-p DE-627 ger DE-627 rakwb eng 530 VZ Miyajima, N. verfasserin aut Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. Fermi Level Bi2Te3 Landau Level Lower Region State Spectrum Sasaki, M. aut Negishi, H. aut Inoue, M. aut Kulbachinskii, V. A. aut Kaminskii, A. Y. aut Suga, K. aut Enthalten in Journal of low temperature physics Kluwer Academic Publishers-Plenum Publishers, 1969 123(2001), 3-4 vom: Mai, Seite 219-238 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:123 year:2001 number:3-4 month:05 pages:219-238 https://doi.org/10.1023/A:1017541912810 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4323 GBV_ILN_4700 AR 123 2001 3-4 05 219-238 |
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Enthalten in Journal of low temperature physics 123(2001), 3-4 vom: Mai, Seite 219-238 volume:123 year:2001 number:3-4 month:05 pages:219-238 |
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Enthalten in Journal of low temperature physics 123(2001), 3-4 vom: Mai, Seite 219-238 volume:123 year:2001 number:3-4 month:05 pages:219-238 |
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Miyajima, N. @@aut@@ Sasaki, M. @@aut@@ Negishi, H. @@aut@@ Inoue, M. @@aut@@ Kulbachinskii, V. A. @@aut@@ Kaminskii, A. Y. @@aut@@ Suga, K. @@aut@@ |
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possible mechanism of a new type of three-dimensional quantized hall effect in layered semiconductors bi2−xsnxte3 |
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Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3 |
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Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. © Plenum Publishing Corporation 2001 |
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Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. © Plenum Publishing Corporation 2001 |
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Abstract We have found a new type of three-dimensional quantized Hall effect (QHE) in layered semiconductors $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ (x≤0.0125) single crystals. The Hall resistivity is not expressed in a universal relation applicable for a conventional QHE and depends appreciably on the doped Sn concentration x. The flat Hall plateaus are visible at higher Landau levels but are rather suppressed at lower regions. The calculated Landau levels of the upper valence band (UVB) with the best-fit band parameters are in excellent agreement with the experiments, including spin splitting. For $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $, the Sn-originated impurity band (IB) has resonant nature and enhances the density of states at the Fermi level of UVB. The charge transfer occurs between the quantized UVB and the resonant IB or the lower valence band (LVB) for $ Bi_{2} $−$ xSn_{x} $$ Te_{3} $ or $ Bi_{2} $$ Te_{3} $, respectively, and the Landau levels are enhanced appreciably. We have revealed that the quasi-localized states are formed in quantized three-dimensional density of state spectra. We have proposed a possible model for the present QHE, which is a modification of Mani's model, where the quasi-localized state is formed at the disorder-originated tail of each Landau level. In the quasi-localized regime, the IB or LVB are responsible for the carrier reservoir to regulate the Hall resistivity. © Plenum Publishing Corporation 2001 |
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