Ion-Implanted Silicon X-Ray Calorimeters: Present and Future
Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized des...
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| Autor*in: |
Kelley, R. L. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2008 |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2008 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of low temperature physics - Springer US, 1969, 151(2008), 1-2 vom: 22. Feb., Seite 375-380 |
|---|---|
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volume:151 ; year:2008 ; number:1-2 ; day:22 ; month:02 ; pages:375-380 |
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10.1007/s10909-007-9663-8 |
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| 520 | |a Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. | ||
| 700 | 1 | |a Allen, C. A. |4 aut | |
| 700 | 1 | |a Galeazzi, M. |4 aut | |
| 700 | 1 | |a Kilbourne, C. A. |4 aut | |
| 700 | 1 | |a McCammon, D. |4 aut | |
| 700 | 1 | |a Porter, F. S. |4 aut | |
| 700 | 1 | |a Szymkowiak, A. E. |4 aut | |
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10.1007/s10909-007-9663-8 doi (DE-627)OLC2036809812 (DE-He213)s10909-007-9663-8-p DE-627 ger DE-627 rakwb eng 530 VZ Kelley, R. L. verfasserin aut Ion-Implanted Silicon X-Ray Calorimeters: Present and Future 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. Allen, C. A. aut Galeazzi, M. aut Kilbourne, C. A. aut McCammon, D. aut Porter, F. S. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Springer US, 1969 151(2008), 1-2 vom: 22. Feb., Seite 375-380 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:151 year:2008 number:1-2 day:22 month:02 pages:375-380 https://doi.org/10.1007/s10909-007-9663-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4323 AR 151 2008 1-2 22 02 375-380 |
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10.1007/s10909-007-9663-8 doi (DE-627)OLC2036809812 (DE-He213)s10909-007-9663-8-p DE-627 ger DE-627 rakwb eng 530 VZ Kelley, R. L. verfasserin aut Ion-Implanted Silicon X-Ray Calorimeters: Present and Future 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. Allen, C. A. aut Galeazzi, M. aut Kilbourne, C. A. aut McCammon, D. aut Porter, F. S. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Springer US, 1969 151(2008), 1-2 vom: 22. Feb., Seite 375-380 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:151 year:2008 number:1-2 day:22 month:02 pages:375-380 https://doi.org/10.1007/s10909-007-9663-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4323 AR 151 2008 1-2 22 02 375-380 |
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10.1007/s10909-007-9663-8 doi (DE-627)OLC2036809812 (DE-He213)s10909-007-9663-8-p DE-627 ger DE-627 rakwb eng 530 VZ Kelley, R. L. verfasserin aut Ion-Implanted Silicon X-Ray Calorimeters: Present and Future 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. Allen, C. A. aut Galeazzi, M. aut Kilbourne, C. A. aut McCammon, D. aut Porter, F. S. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Springer US, 1969 151(2008), 1-2 vom: 22. Feb., Seite 375-380 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:151 year:2008 number:1-2 day:22 month:02 pages:375-380 https://doi.org/10.1007/s10909-007-9663-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4323 AR 151 2008 1-2 22 02 375-380 |
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10.1007/s10909-007-9663-8 doi (DE-627)OLC2036809812 (DE-He213)s10909-007-9663-8-p DE-627 ger DE-627 rakwb eng 530 VZ Kelley, R. L. verfasserin aut Ion-Implanted Silicon X-Ray Calorimeters: Present and Future 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. Allen, C. A. aut Galeazzi, M. aut Kilbourne, C. A. aut McCammon, D. aut Porter, F. S. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Springer US, 1969 151(2008), 1-2 vom: 22. Feb., Seite 375-380 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:151 year:2008 number:1-2 day:22 month:02 pages:375-380 https://doi.org/10.1007/s10909-007-9663-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4323 AR 151 2008 1-2 22 02 375-380 |
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10.1007/s10909-007-9663-8 doi (DE-627)OLC2036809812 (DE-He213)s10909-007-9663-8-p DE-627 ger DE-627 rakwb eng 530 VZ Kelley, R. L. verfasserin aut Ion-Implanted Silicon X-Ray Calorimeters: Present and Future 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. Allen, C. A. aut Galeazzi, M. aut Kilbourne, C. A. aut McCammon, D. aut Porter, F. S. aut Szymkowiak, A. E. aut Enthalten in Journal of low temperature physics Springer US, 1969 151(2008), 1-2 vom: 22. Feb., Seite 375-380 (DE-627)129546267 (DE-600)218311-0 (DE-576)014996642 0022-2291 nnns volume:151 year:2008 number:1-2 day:22 month:02 pages:375-380 https://doi.org/10.1007/s10909-007-9663-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_40 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4323 AR 151 2008 1-2 22 02 375-380 |
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Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. © Springer Science+Business Media, LLC 2008 |
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Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. © Springer Science+Business Media, LLC 2008 |
| abstract_unstemmed |
Abstract We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years. © Springer Science+Business Media, LLC 2008 |
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Ion-Implanted Silicon X-Ray Calorimeters: Present and Future |
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Allen, C. A. Galeazzi, M. Kilbourne, C. A. McCammon, D. Porter, F. S. Szymkowiak, A. E. |
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