Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser
Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ laye...
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| Autor*in: |
Zhang, Junqin [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2020 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of Russian laser research - Springer US, 1994, 41(2020), 1 vom: Jan., Seite 98-103 |
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| Übergeordnetes Werk: |
volume:41 ; year:2020 ; number:1 ; month:01 ; pages:98-103 |
| Links: |
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| DOI / URN: |
10.1007/s10946-020-09853-1 |
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| Katalog-ID: |
OLC2038457131 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2038457131 | ||
| 003 | DE-627 | ||
| 005 | 20230504125542.0 | ||
| 007 | tu | ||
| 008 | 200819s2020 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s10946-020-09853-1 |2 doi | |
| 035 | |a (DE-627)OLC2038457131 | ||
| 035 | |a (DE-He213)s10946-020-09853-1-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 530 |q VZ |
| 100 | 1 | |a Zhang, Junqin |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
| 264 | 1 | |c 2020 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Springer Science+Business Media, LLC, part of Springer Nature 2020 | ||
| 520 | |a Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. | ||
| 650 | 4 | |a Si-based laser | |
| 650 | 4 | |a multi-quantum-well laser | |
| 650 | 4 | |a GeSn/SiGeSn laser | |
| 700 | 1 | |a Ma, Jinge |4 aut | |
| 700 | 1 | |a Yang, Yintang |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of Russian laser research |d Springer US, 1994 |g 41(2020), 1 vom: Jan., Seite 98-103 |w (DE-627)182306879 |w (DE-600)1195919-8 |w (DE-576)045287678 |x 1071-2836 |7 nnns |
| 773 | 1 | 8 | |g volume:41 |g year:2020 |g number:1 |g month:01 |g pages:98-103 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s10946-020-09853-1 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-PHY | ||
| 951 | |a AR | ||
| 952 | |d 41 |j 2020 |e 1 |c 01 |h 98-103 | ||
| author_variant |
j z jz j m jm y y yy |
|---|---|
| matchkey_str |
article:10712836:2020----::einfsbsdatcmthdenienut |
| hierarchy_sort_str |
2020 |
| publishDate |
2020 |
| allfields |
10.1007/s10946-020-09853-1 doi (DE-627)OLC2038457131 (DE-He213)s10946-020-09853-1-p DE-627 ger DE-627 rakwb eng 530 VZ Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser multi-quantum-well laser GeSn/SiGeSn laser Ma, Jinge aut Yang, Yintang aut Enthalten in Journal of Russian laser research Springer US, 1994 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)182306879 (DE-600)1195919-8 (DE-576)045287678 1071-2836 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 41 2020 1 01 98-103 |
| spelling |
10.1007/s10946-020-09853-1 doi (DE-627)OLC2038457131 (DE-He213)s10946-020-09853-1-p DE-627 ger DE-627 rakwb eng 530 VZ Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser multi-quantum-well laser GeSn/SiGeSn laser Ma, Jinge aut Yang, Yintang aut Enthalten in Journal of Russian laser research Springer US, 1994 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)182306879 (DE-600)1195919-8 (DE-576)045287678 1071-2836 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 41 2020 1 01 98-103 |
| allfields_unstemmed |
10.1007/s10946-020-09853-1 doi (DE-627)OLC2038457131 (DE-He213)s10946-020-09853-1-p DE-627 ger DE-627 rakwb eng 530 VZ Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser multi-quantum-well laser GeSn/SiGeSn laser Ma, Jinge aut Yang, Yintang aut Enthalten in Journal of Russian laser research Springer US, 1994 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)182306879 (DE-600)1195919-8 (DE-576)045287678 1071-2836 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 41 2020 1 01 98-103 |
| allfieldsGer |
10.1007/s10946-020-09853-1 doi (DE-627)OLC2038457131 (DE-He213)s10946-020-09853-1-p DE-627 ger DE-627 rakwb eng 530 VZ Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser multi-quantum-well laser GeSn/SiGeSn laser Ma, Jinge aut Yang, Yintang aut Enthalten in Journal of Russian laser research Springer US, 1994 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)182306879 (DE-600)1195919-8 (DE-576)045287678 1071-2836 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 41 2020 1 01 98-103 |
| allfieldsSound |
10.1007/s10946-020-09853-1 doi (DE-627)OLC2038457131 (DE-He213)s10946-020-09853-1-p DE-627 ger DE-627 rakwb eng 530 VZ Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2020 Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser multi-quantum-well laser GeSn/SiGeSn laser Ma, Jinge aut Yang, Yintang aut Enthalten in Journal of Russian laser research Springer US, 1994 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)182306879 (DE-600)1195919-8 (DE-576)045287678 1071-2836 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 41 2020 1 01 98-103 |
| language |
English |
| source |
Enthalten in Journal of Russian laser research 41(2020), 1 vom: Jan., Seite 98-103 volume:41 year:2020 number:1 month:01 pages:98-103 |
| sourceStr |
Enthalten in Journal of Russian laser research 41(2020), 1 vom: Jan., Seite 98-103 volume:41 year:2020 number:1 month:01 pages:98-103 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Si-based laser multi-quantum-well laser GeSn/SiGeSn laser |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Journal of Russian laser research |
| authorswithroles_txt_mv |
Zhang, Junqin @@aut@@ Ma, Jinge @@aut@@ Yang, Yintang @@aut@@ |
| publishDateDaySort_date |
2020-01-01T00:00:00Z |
| hierarchy_top_id |
182306879 |
| dewey-sort |
3530 |
| id |
OLC2038457131 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2038457131</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504125542.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2020 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10946-020-09853-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2038457131</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10946-020-09853-1-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhang, Junqin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC, part of Springer Nature 2020</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Si-based laser</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">multi-quantum-well laser</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GeSn/SiGeSn laser</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Jinge</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Yintang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of Russian laser research</subfield><subfield code="d">Springer US, 1994</subfield><subfield code="g">41(2020), 1 vom: Jan., Seite 98-103</subfield><subfield code="w">(DE-627)182306879</subfield><subfield code="w">(DE-600)1195919-8</subfield><subfield code="w">(DE-576)045287678</subfield><subfield code="x">1071-2836</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:41</subfield><subfield code="g">year:2020</subfield><subfield code="g">number:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:98-103</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10946-020-09853-1</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">41</subfield><subfield code="j">2020</subfield><subfield code="e">1</subfield><subfield code="c">01</subfield><subfield code="h">98-103</subfield></datafield></record></collection>
|
| author |
Zhang, Junqin |
| spellingShingle |
Zhang, Junqin ddc 530 misc Si-based laser misc multi-quantum-well laser misc GeSn/SiGeSn laser Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
| authorStr |
Zhang, Junqin |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)182306879 |
| format |
Article |
| dewey-ones |
530 - Physics |
| delete_txt_mv |
keep |
| author_role |
aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
1071-2836 |
| topic_title |
530 VZ Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser Si-based laser multi-quantum-well laser GeSn/SiGeSn laser |
| topic |
ddc 530 misc Si-based laser misc multi-quantum-well laser misc GeSn/SiGeSn laser |
| topic_unstemmed |
ddc 530 misc Si-based laser misc multi-quantum-well laser misc GeSn/SiGeSn laser |
| topic_browse |
ddc 530 misc Si-based laser misc multi-quantum-well laser misc GeSn/SiGeSn laser |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of Russian laser research |
| hierarchy_parent_id |
182306879 |
| dewey-tens |
530 - Physics |
| hierarchy_top_title |
Journal of Russian laser research |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)182306879 (DE-600)1195919-8 (DE-576)045287678 |
| title |
Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
| ctrlnum |
(DE-627)OLC2038457131 (DE-He213)s10946-020-09853-1-p |
| title_full |
Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
| author_sort |
Zhang, Junqin |
| journal |
Journal of Russian laser research |
| journalStr |
Journal of Russian laser research |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science |
| recordtype |
marc |
| publishDateSort |
2020 |
| contenttype_str_mv |
txt |
| container_start_page |
98 |
| author_browse |
Zhang, Junqin Ma, Jinge Yang, Yintang |
| container_volume |
41 |
| class |
530 VZ |
| format_se |
Aufsätze |
| author-letter |
Zhang, Junqin |
| doi_str_mv |
10.1007/s10946-020-09853-1 |
| dewey-full |
530 |
| title_sort |
design of a si-based lattice-matched gesn/sigesn multi-quantum-well laser |
| title_auth |
Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
| abstract |
Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. © Springer Science+Business Media, LLC, part of Springer Nature 2020 |
| abstractGer |
Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. © Springer Science+Business Media, LLC, part of Springer Nature 2020 |
| abstract_unstemmed |
Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. © Springer Science+Business Media, LLC, part of Springer Nature 2020 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY |
| container_issue |
1 |
| title_short |
Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
| url |
https://doi.org/10.1007/s10946-020-09853-1 |
| remote_bool |
false |
| author2 |
Ma, Jinge Yang, Yintang |
| author2Str |
Ma, Jinge Yang, Yintang |
| ppnlink |
182306879 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s10946-020-09853-1 |
| up_date |
2024-07-03T18:56:40.647Z |
| _version_ |
1803585323709497344 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2038457131</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504125542.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2020 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10946-020-09853-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2038457131</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10946-020-09853-1-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhang, Junqin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC, part of Springer Nature 2020</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} $$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} $$ Sn_{0.1} $/$ Si_{0.14} $$ Ge_{0.71} $$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Si-based laser</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">multi-quantum-well laser</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GeSn/SiGeSn laser</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Jinge</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Yintang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of Russian laser research</subfield><subfield code="d">Springer US, 1994</subfield><subfield code="g">41(2020), 1 vom: Jan., Seite 98-103</subfield><subfield code="w">(DE-627)182306879</subfield><subfield code="w">(DE-600)1195919-8</subfield><subfield code="w">(DE-576)045287678</subfield><subfield code="x">1071-2836</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:41</subfield><subfield code="g">year:2020</subfield><subfield code="g">number:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:98-103</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10946-020-09853-1</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">41</subfield><subfield code="j">2020</subfield><subfield code="e">1</subfield><subfield code="c">01</subfield><subfield code="h">98-103</subfield></datafield></record></collection>
|
| score |
7.398823 |