radiation-induced effects in Ge-As-S chalcogenide glasses
Abstract The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Shpotyuk, O. I. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2000 |
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| Schlagwörter: |
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| Anmerkung: |
© MAIK “Nauka/Interperiodica” 2000 |
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| Übergeordnetes Werk: |
Enthalten in: Glass physics and chemistry - Nauka/Interperiodica, 1993, 26(2000), 3 vom: Mai, Seite 260-264 |
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| Übergeordnetes Werk: |
volume:26 ; year:2000 ; number:3 ; month:05 ; pages:260-264 |
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| DOI / URN: |
10.1007/BF02738294 |
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| 520 | |a Abstract The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous semiconductors. | ||
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10.1007/BF02738294 doi (DE-627)OLC2039263519 (DE-He213)BF02738294-p DE-627 ger DE-627 rakwb eng 330 VZ Shpotyuk, O. I. verfasserin aut radiation-induced effects in Ge-As-S chalcogenide glasses 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK “Nauka/Interperiodica” 2000 Abstract The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous semiconductors. Glass Physic Chalcogenide Glass Arsenic Sulfide Amorphous Chalcogenide Energy Portion Vakiv, N. M. aut Koval’skii, A. P. aut Skordeva, E. aut Vateva, E. aut Arsova, D. aut Golovchak, R. Ya. aut Lutsiv, R. V. aut Enthalten in Glass physics and chemistry Nauka/Interperiodica, 1993 26(2000), 3 vom: Mai, Seite 260-264 (DE-627)182171957 (DE-600)1182895-X (DE-576)9182171955 1087-6596 nnns volume:26 year:2000 number:3 month:05 pages:260-264 https://doi.org/10.1007/BF02738294 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_31 GBV_ILN_32 GBV_ILN_70 AR 26 2000 3 05 260-264 |
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10.1007/BF02738294 doi (DE-627)OLC2039263519 (DE-He213)BF02738294-p DE-627 ger DE-627 rakwb eng 330 VZ Shpotyuk, O. I. verfasserin aut radiation-induced effects in Ge-As-S chalcogenide glasses 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK “Nauka/Interperiodica” 2000 Abstract The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous semiconductors. Glass Physic Chalcogenide Glass Arsenic Sulfide Amorphous Chalcogenide Energy Portion Vakiv, N. M. aut Koval’skii, A. P. aut Skordeva, E. aut Vateva, E. aut Arsova, D. aut Golovchak, R. Ya. aut Lutsiv, R. V. aut Enthalten in Glass physics and chemistry Nauka/Interperiodica, 1993 26(2000), 3 vom: Mai, Seite 260-264 (DE-627)182171957 (DE-600)1182895-X (DE-576)9182171955 1087-6596 nnns volume:26 year:2000 number:3 month:05 pages:260-264 https://doi.org/10.1007/BF02738294 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_31 GBV_ILN_32 GBV_ILN_70 AR 26 2000 3 05 260-264 |
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10.1007/BF02738294 doi (DE-627)OLC2039263519 (DE-He213)BF02738294-p DE-627 ger DE-627 rakwb eng 330 VZ Shpotyuk, O. I. verfasserin aut radiation-induced effects in Ge-As-S chalcogenide glasses 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK “Nauka/Interperiodica” 2000 Abstract The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous semiconductors. Glass Physic Chalcogenide Glass Arsenic Sulfide Amorphous Chalcogenide Energy Portion Vakiv, N. M. aut Koval’skii, A. P. aut Skordeva, E. aut Vateva, E. aut Arsova, D. aut Golovchak, R. Ya. aut Lutsiv, R. V. aut Enthalten in Glass physics and chemistry Nauka/Interperiodica, 1993 26(2000), 3 vom: Mai, Seite 260-264 (DE-627)182171957 (DE-600)1182895-X (DE-576)9182171955 1087-6596 nnns volume:26 year:2000 number:3 month:05 pages:260-264 https://doi.org/10.1007/BF02738294 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_31 GBV_ILN_32 GBV_ILN_70 AR 26 2000 3 05 260-264 |
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10.1007/BF02738294 doi (DE-627)OLC2039263519 (DE-He213)BF02738294-p DE-627 ger DE-627 rakwb eng 330 VZ Shpotyuk, O. I. verfasserin aut radiation-induced effects in Ge-As-S chalcogenide glasses 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK “Nauka/Interperiodica” 2000 Abstract The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous semiconductors. Glass Physic Chalcogenide Glass Arsenic Sulfide Amorphous Chalcogenide Energy Portion Vakiv, N. M. aut Koval’skii, A. P. aut Skordeva, E. aut Vateva, E. aut Arsova, D. aut Golovchak, R. Ya. aut Lutsiv, R. V. aut Enthalten in Glass physics and chemistry Nauka/Interperiodica, 1993 26(2000), 3 vom: Mai, Seite 260-264 (DE-627)182171957 (DE-600)1182895-X (DE-576)9182171955 1087-6596 nnns volume:26 year:2000 number:3 month:05 pages:260-264 https://doi.org/10.1007/BF02738294 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_31 GBV_ILN_32 GBV_ILN_70 AR 26 2000 3 05 260-264 |
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Abstract The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous semiconductors. © MAIK “Nauka/Interperiodica” 2000 |
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Abstract The radiation-optical properties of vitreous semiconductors in the Ge-As-S system are studied near the 2D-3D topological phase transition. The results obtained are interpreted within the framework of the model of coordination defect centers, which are characteristic of chalcogenide vitreous semiconductors. © MAIK “Nauka/Interperiodica” 2000 |
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