A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host
Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The cl...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bogomolov, V. N. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1997 |
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| Schlagwörter: |
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| Anmerkung: |
© American Institute of Physics 1997 |
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| Übergeordnetes Werk: |
Enthalten in: Physics of the solid state - Nauka/Interperiodica, 1993, 39(1997), 11 vom: Nov., Seite 1869-1874 |
|---|---|
| Übergeordnetes Werk: |
volume:39 ; year:1997 ; number:11 ; month:11 ; pages:1869-1874 |
| Links: |
|---|
| DOI / URN: |
10.1134/1.1130190 |
|---|
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OLC2040670742 |
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| 520 | |a Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. | ||
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10.1134/1.1130190 doi (DE-627)OLC2040670742 (DE-He213)1.1130190-p DE-627 ger DE-627 rakwb eng 530 VZ Bogomolov, V. N. verfasserin aut A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1997 Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. Tellurium Crystallographic Orientation Silica Sphere Directional Crystallization Cluster Lattice Sorokin, L. M. aut Kurdyukov, D. A. aut Pavlova, T. M. aut Hutchison, J. L. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 39(1997), 11 vom: Nov., Seite 1869-1874 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:39 year:1997 number:11 month:11 pages:1869-1874 https://doi.org/10.1134/1.1130190 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2095 GBV_ILN_4027 GBV_ILN_4116 GBV_ILN_4306 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4323 GBV_ILN_4700 AR 39 1997 11 11 1869-1874 |
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10.1134/1.1130190 doi (DE-627)OLC2040670742 (DE-He213)1.1130190-p DE-627 ger DE-627 rakwb eng 530 VZ Bogomolov, V. N. verfasserin aut A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1997 Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. Tellurium Crystallographic Orientation Silica Sphere Directional Crystallization Cluster Lattice Sorokin, L. M. aut Kurdyukov, D. A. aut Pavlova, T. M. aut Hutchison, J. L. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 39(1997), 11 vom: Nov., Seite 1869-1874 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:39 year:1997 number:11 month:11 pages:1869-1874 https://doi.org/10.1134/1.1130190 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2095 GBV_ILN_4027 GBV_ILN_4116 GBV_ILN_4306 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4323 GBV_ILN_4700 AR 39 1997 11 11 1869-1874 |
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10.1134/1.1130190 doi (DE-627)OLC2040670742 (DE-He213)1.1130190-p DE-627 ger DE-627 rakwb eng 530 VZ Bogomolov, V. N. verfasserin aut A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1997 Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. Tellurium Crystallographic Orientation Silica Sphere Directional Crystallization Cluster Lattice Sorokin, L. M. aut Kurdyukov, D. A. aut Pavlova, T. M. aut Hutchison, J. L. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 39(1997), 11 vom: Nov., Seite 1869-1874 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:39 year:1997 number:11 month:11 pages:1869-1874 https://doi.org/10.1134/1.1130190 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2095 GBV_ILN_4027 GBV_ILN_4116 GBV_ILN_4306 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4323 GBV_ILN_4700 AR 39 1997 11 11 1869-1874 |
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10.1134/1.1130190 doi (DE-627)OLC2040670742 (DE-He213)1.1130190-p DE-627 ger DE-627 rakwb eng 530 VZ Bogomolov, V. N. verfasserin aut A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1997 Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. Tellurium Crystallographic Orientation Silica Sphere Directional Crystallization Cluster Lattice Sorokin, L. M. aut Kurdyukov, D. A. aut Pavlova, T. M. aut Hutchison, J. L. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 39(1997), 11 vom: Nov., Seite 1869-1874 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:39 year:1997 number:11 month:11 pages:1869-1874 https://doi.org/10.1134/1.1130190 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2095 GBV_ILN_4027 GBV_ILN_4116 GBV_ILN_4306 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4323 GBV_ILN_4700 AR 39 1997 11 11 1869-1874 |
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10.1134/1.1130190 doi (DE-627)OLC2040670742 (DE-He213)1.1130190-p DE-627 ger DE-627 rakwb eng 530 VZ Bogomolov, V. N. verfasserin aut A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1997 Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. Tellurium Crystallographic Orientation Silica Sphere Directional Crystallization Cluster Lattice Sorokin, L. M. aut Kurdyukov, D. A. aut Pavlova, T. M. aut Hutchison, J. L. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 39(1997), 11 vom: Nov., Seite 1869-1874 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:39 year:1997 number:11 month:11 pages:1869-1874 https://doi.org/10.1134/1.1130190 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2095 GBV_ILN_4027 GBV_ILN_4116 GBV_ILN_4306 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4323 GBV_ILN_4700 AR 39 1997 11 11 1869-1874 |
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530 VZ A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host Tellurium Crystallographic Orientation Silica Sphere Directional Crystallization Cluster Lattice |
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ddc 530 misc Tellurium misc Crystallographic Orientation misc Silica Sphere misc Directional Crystallization misc Cluster Lattice |
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ddc 530 misc Tellurium misc Crystallographic Orientation misc Silica Sphere misc Directional Crystallization misc Cluster Lattice |
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ddc 530 misc Tellurium misc Crystallographic Orientation misc Silica Sphere misc Directional Crystallization misc Cluster Lattice |
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A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host |
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A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host |
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Bogomolov, V. N. |
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Physics of the solid state |
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1997 |
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Bogomolov, V. N. Sorokin, L. M. Kurdyukov, D. A. Pavlova, T. M. Hutchison, J. L. |
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a comparative tem study of the 3d lattice of tellurium nanoclusters fabricated by different techniques in an opal host |
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A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host |
| abstract |
Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. © American Institute of Physics 1997 |
| abstractGer |
Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. © American Institute of Physics 1997 |
| abstract_unstemmed |
Abstract An electron-microscope study of synthetic opals containing tellurium introduced into the regular void array either by melt injection or by evaporation from solution is reported. In the first case, a three-dimensional array of tellurium clusters interconnected by bridges was revealed. The clusters retain the same crystallographic orientation as one moves from one cluster to another. This suggests that cooling after inserting tellurium results in its directional crystallization, which is possibly controlled by the interconnecting channels. The second technique of tellurium introduction produces a nonuniform cluster array, with three-dimensional clusters growing not in all voids. The surface of most of the silica spheres is coated by a thin discontinuous layer of tellurium. This structure of the cluster array accounts for the nonlinear current-voltage characteristic of the object as a whole. A possibility of engineering cluster lattices differing in structural parameters has been demonstrated. © American Institute of Physics 1997 |
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A comparative TEM study of the 3D lattice of tellurium nanoclusters fabricated by different techniques in an opal host |
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