$ Si_{1−x} $$ Ge_{x} $/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure
Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to ch...
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| Autor*in: |
Vostokov, N. V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2005 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Inc. 2005 |
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| Übergeordnetes Werk: |
Enthalten in: Physics of the solid state - Nauka/Interperiodica, 1993, 47(2005), 1 vom: Jan., Seite 42-45 |
|---|---|
| Übergeordnetes Werk: |
volume:47 ; year:2005 ; number:1 ; month:01 ; pages:42-45 |
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| DOI / URN: |
10.1134/1.1853441 |
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OLC2040701435 |
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| 520 | |a Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that $ Si_{1−x} $$ Ge_{x} $/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy. | ||
| 650 | 4 | |a Spectroscopy | |
| 650 | 4 | |a State Physics | |
| 650 | 4 | |a Surface Roughness | |
| 650 | 4 | |a Chemical Vapor Deposition | |
| 650 | 4 | |a Vapor Deposition | |
| 700 | 1 | |a Drozdov, Yu. N. |4 aut | |
| 700 | 1 | |a Krasil’nik, Z. F. |4 aut | |
| 700 | 1 | |a Kuznetsov, O. A. |4 aut | |
| 700 | 1 | |a Novikov, A. V. |4 aut | |
| 700 | 1 | |a Perevoshchikov, V. A. |4 aut | |
| 700 | 1 | |a Shaleev, M. V. |4 aut | |
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10.1134/1.1853441 doi (DE-627)OLC2040701435 (DE-He213)1.1853441-p DE-627 ger DE-627 rakwb eng 530 VZ Vostokov, N. V. verfasserin aut $ Si_{1−x} $$ Ge_{x} $/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2005 Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that $ Si_{1−x} $$ Ge_{x} $/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy. Spectroscopy State Physics Surface Roughness Chemical Vapor Deposition Vapor Deposition Drozdov, Yu. N. aut Krasil’nik, Z. F. aut Kuznetsov, O. A. aut Novikov, A. V. aut Perevoshchikov, V. A. aut Shaleev, M. V. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 47(2005), 1 vom: Jan., Seite 42-45 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:47 year:2005 number:1 month:01 pages:42-45 https://doi.org/10.1134/1.1853441 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4700 AR 47 2005 1 01 42-45 |
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10.1134/1.1853441 doi (DE-627)OLC2040701435 (DE-He213)1.1853441-p DE-627 ger DE-627 rakwb eng 530 VZ Vostokov, N. V. verfasserin aut $ Si_{1−x} $$ Ge_{x} $/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2005 Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that $ Si_{1−x} $$ Ge_{x} $/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy. Spectroscopy State Physics Surface Roughness Chemical Vapor Deposition Vapor Deposition Drozdov, Yu. N. aut Krasil’nik, Z. F. aut Kuznetsov, O. A. aut Novikov, A. V. aut Perevoshchikov, V. A. aut Shaleev, M. V. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 47(2005), 1 vom: Jan., Seite 42-45 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:47 year:2005 number:1 month:01 pages:42-45 https://doi.org/10.1134/1.1853441 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4700 AR 47 2005 1 01 42-45 |
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10.1134/1.1853441 doi (DE-627)OLC2040701435 (DE-He213)1.1853441-p DE-627 ger DE-627 rakwb eng 530 VZ Vostokov, N. V. verfasserin aut $ Si_{1−x} $$ Ge_{x} $/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2005 Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that $ Si_{1−x} $$ Ge_{x} $/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy. Spectroscopy State Physics Surface Roughness Chemical Vapor Deposition Vapor Deposition Drozdov, Yu. N. aut Krasil’nik, Z. F. aut Kuznetsov, O. A. aut Novikov, A. V. aut Perevoshchikov, V. A. aut Shaleev, M. V. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 47(2005), 1 vom: Jan., Seite 42-45 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:47 year:2005 number:1 month:01 pages:42-45 https://doi.org/10.1134/1.1853441 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4700 AR 47 2005 1 01 42-45 |
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10.1134/1.1853441 doi (DE-627)OLC2040701435 (DE-He213)1.1853441-p DE-627 ger DE-627 rakwb eng 530 VZ Vostokov, N. V. verfasserin aut $ Si_{1−x} $$ Ge_{x} $/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2005 Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that $ Si_{1−x} $$ Ge_{x} $/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy. Spectroscopy State Physics Surface Roughness Chemical Vapor Deposition Vapor Deposition Drozdov, Yu. N. aut Krasil’nik, Z. F. aut Kuznetsov, O. A. aut Novikov, A. V. aut Perevoshchikov, V. A. aut Shaleev, M. V. aut Enthalten in Physics of the solid state Nauka/Interperiodica, 1993 47(2005), 1 vom: Jan., Seite 42-45 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:47 year:2005 number:1 month:01 pages:42-45 https://doi.org/10.1134/1.1853441 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4700 AR 47 2005 1 01 42-45 |
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$ Si_{1−x} $$ Ge_{x} $/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure |
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Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that $ Si_{1−x} $$ Ge_{x} $/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy. © Pleiades Publishing, Inc. 2005 |
| abstractGer |
Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that $ Si_{1−x} $$ Ge_{x} $/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy. © Pleiades Publishing, Inc. 2005 |
| abstract_unstemmed |
Abstract Relaxed step-graded buffer layers of $ Si_{1−x} $$ Ge_{x} $/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the $ Si_{1−x} $$ Ge_{x} $/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that $ Si_{1−x} $$ Ge_{x} $/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy. © Pleiades Publishing, Inc. 2005 |
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| title_short |
$ Si_{1−x} $$ Ge_{x} $/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure |
| url |
https://doi.org/10.1134/1.1853441 |
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| author2 |
Drozdov, Yu. N. Krasil’nik, Z. F. Kuznetsov, O. A. Novikov, A. V. Perevoshchikov, V. A. Shaleev, M. V. |
| author2Str |
Drozdov, Yu. N. Krasil’nik, Z. F. Kuznetsov, O. A. Novikov, A. V. Perevoshchikov, V. A. Shaleev, M. V. |
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16567332X |
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| doi_str |
10.1134/1.1853441 |
| up_date |
2024-07-04T02:56:58.553Z |
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1803615541460467712 |
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