Contact melting in layered film systems of the eutectic type
Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi sys...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gladkikh, N. T. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2010 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2010 |
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| Übergeordnetes Werk: |
Enthalten in: Physics of the solid state - SP MAIK Nauka/Interperiodica, 1993, 52(2010), 3 vom: März, Seite 633-640 |
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| Übergeordnetes Werk: |
volume:52 ; year:2010 ; number:3 ; month:03 ; pages:633-640 |
| Links: |
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| DOI / URN: |
10.1134/S1063783410030273 |
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OLC2040720170 |
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| 520 | |a Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs. | ||
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| 700 | 1 | |a Sukhov, R. V. |4 aut | |
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10.1134/S1063783410030273 doi (DE-627)OLC2040720170 (DE-He213)S1063783410030273-p DE-627 ger DE-627 rakwb eng 530 VZ Gladkikh, N. T. verfasserin aut Contact melting in layered film systems of the eutectic type 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs. Eutectic Temperature Eutectic Composition Critical Thickness Film System Eutectic Melting Kryshtal’, A. P. aut Sukhov, R. V. aut Enthalten in Physics of the solid state SP MAIK Nauka/Interperiodica, 1993 52(2010), 3 vom: März, Seite 633-640 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:52 year:2010 number:3 month:03 pages:633-640 https://doi.org/10.1134/S1063783410030273 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_4700 AR 52 2010 3 03 633-640 |
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10.1134/S1063783410030273 doi (DE-627)OLC2040720170 (DE-He213)S1063783410030273-p DE-627 ger DE-627 rakwb eng 530 VZ Gladkikh, N. T. verfasserin aut Contact melting in layered film systems of the eutectic type 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs. Eutectic Temperature Eutectic Composition Critical Thickness Film System Eutectic Melting Kryshtal’, A. P. aut Sukhov, R. V. aut Enthalten in Physics of the solid state SP MAIK Nauka/Interperiodica, 1993 52(2010), 3 vom: März, Seite 633-640 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:52 year:2010 number:3 month:03 pages:633-640 https://doi.org/10.1134/S1063783410030273 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_4700 AR 52 2010 3 03 633-640 |
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10.1134/S1063783410030273 doi (DE-627)OLC2040720170 (DE-He213)S1063783410030273-p DE-627 ger DE-627 rakwb eng 530 VZ Gladkikh, N. T. verfasserin aut Contact melting in layered film systems of the eutectic type 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs. Eutectic Temperature Eutectic Composition Critical Thickness Film System Eutectic Melting Kryshtal’, A. P. aut Sukhov, R. V. aut Enthalten in Physics of the solid state SP MAIK Nauka/Interperiodica, 1993 52(2010), 3 vom: März, Seite 633-640 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:52 year:2010 number:3 month:03 pages:633-640 https://doi.org/10.1134/S1063783410030273 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_4700 AR 52 2010 3 03 633-640 |
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10.1134/S1063783410030273 doi (DE-627)OLC2040720170 (DE-He213)S1063783410030273-p DE-627 ger DE-627 rakwb eng 530 VZ Gladkikh, N. T. verfasserin aut Contact melting in layered film systems of the eutectic type 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs. Eutectic Temperature Eutectic Composition Critical Thickness Film System Eutectic Melting Kryshtal’, A. P. aut Sukhov, R. V. aut Enthalten in Physics of the solid state SP MAIK Nauka/Interperiodica, 1993 52(2010), 3 vom: März, Seite 633-640 (DE-627)16567332X (DE-600)1159011-7 (DE-576)038490706 1063-7834 nnns volume:52 year:2010 number:3 month:03 pages:633-640 https://doi.org/10.1134/S1063783410030273 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_4700 AR 52 2010 3 03 633-640 |
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Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs. © Pleiades Publishing, Ltd. 2010 |
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Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs. © Pleiades Publishing, Ltd. 2010 |
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Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs. © Pleiades Publishing, Ltd. 2010 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2040720170</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504111154.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2010 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1063783410030273</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2040720170</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)S1063783410030273-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Gladkikh, N. T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Contact melting in layered film systems of the eutectic type</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2010</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The existing concepts of the mechanism of eutectic melting have been developed on the basis of the study of melting in the Sn-Bi film system. This paper reports on the experimental results indicating the possibility of visualizing an increase in the solubility of components in the Sn-Bi system with increasing temperature and the existence of a critical thickness of the film of one of the components below which no eutectic melting occurs.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Eutectic Temperature</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Eutectic Composition</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Critical Thickness</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Film System</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Eutectic Melting</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kryshtal’, A. P.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sukhov, R. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physics of the solid state</subfield><subfield code="d">SP MAIK Nauka/Interperiodica, 1993</subfield><subfield code="g">52(2010), 3 vom: März, Seite 633-640</subfield><subfield code="w">(DE-627)16567332X</subfield><subfield code="w">(DE-600)1159011-7</subfield><subfield code="w">(DE-576)038490706</subfield><subfield code="x">1063-7834</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:52</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:3</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:633-640</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1063783410030273</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">52</subfield><subfield code="j">2010</subfield><subfield code="e">3</subfield><subfield code="c">03</subfield><subfield code="h">633-640</subfield></datafield></record></collection>
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