Materials for light emitting diodes
Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials i...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Archer, R. J. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1972 |
|---|
| Schlagwörter: |
|---|
| Anmerkung: |
© The Metallurgical of Society of AIME 1972 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 1(1972), 1 vom: Feb., Seite 127-153 |
|---|---|
| Übergeordnetes Werk: |
volume:1 ; year:1972 ; number:1 ; month:02 ; pages:127-153 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02660358 |
|---|
| Katalog-ID: |
OLC2042249165 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2042249165 | ||
| 003 | DE-627 | ||
| 005 | 20230506021220.0 | ||
| 007 | tu | ||
| 008 | 200820s1972 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/BF02660358 |2 doi | |
| 035 | |a (DE-627)OLC2042249165 | ||
| 035 | |a (DE-He213)BF02660358-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q VZ |
| 100 | 1 | |a Archer, R. J. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Materials for light emitting diodes |
| 264 | 1 | |c 1972 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © The Metallurgical of Society of AIME 1972 | ||
| 520 | |a Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. | ||
| 650 | 4 | |a Luminous Efficacy | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of electronic materials |d Springer-Verlag, 1972 |g 1(1972), 1 vom: Feb., Seite 127-153 |w (DE-627)129398233 |w (DE-600)186069-0 |w (DE-576)014781387 |x 0361-5235 |7 nnns |
| 773 | 1 | 8 | |g volume:1 |g year:1972 |g number:1 |g month:02 |g pages:127-153 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/BF02660358 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_21 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_4266 | ||
| 912 | |a GBV_ILN_4318 | ||
| 912 | |a GBV_ILN_4319 | ||
| 951 | |a AR | ||
| 952 | |d 1 |j 1972 |e 1 |c 02 |h 127-153 | ||
| author_variant |
r j a rj rja |
|---|---|
| matchkey_str |
article:03615235:1972----::aeilfrihei |
| hierarchy_sort_str |
1972 |
| publishDate |
1972 |
| allfields |
10.1007/BF02660358 doi (DE-627)OLC2042249165 (DE-He213)BF02660358-p DE-627 ger DE-627 rakwb eng 670 VZ Archer, R. J. verfasserin aut Materials for light emitting diodes 1972 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1972 Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. Luminous Efficacy Enthalten in Journal of electronic materials Springer-Verlag, 1972 1(1972), 1 vom: Feb., Seite 127-153 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:1 year:1972 number:1 month:02 pages:127-153 https://doi.org/10.1007/BF02660358 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 AR 1 1972 1 02 127-153 |
| spelling |
10.1007/BF02660358 doi (DE-627)OLC2042249165 (DE-He213)BF02660358-p DE-627 ger DE-627 rakwb eng 670 VZ Archer, R. J. verfasserin aut Materials for light emitting diodes 1972 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1972 Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. Luminous Efficacy Enthalten in Journal of electronic materials Springer-Verlag, 1972 1(1972), 1 vom: Feb., Seite 127-153 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:1 year:1972 number:1 month:02 pages:127-153 https://doi.org/10.1007/BF02660358 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 AR 1 1972 1 02 127-153 |
| allfields_unstemmed |
10.1007/BF02660358 doi (DE-627)OLC2042249165 (DE-He213)BF02660358-p DE-627 ger DE-627 rakwb eng 670 VZ Archer, R. J. verfasserin aut Materials for light emitting diodes 1972 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1972 Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. Luminous Efficacy Enthalten in Journal of electronic materials Springer-Verlag, 1972 1(1972), 1 vom: Feb., Seite 127-153 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:1 year:1972 number:1 month:02 pages:127-153 https://doi.org/10.1007/BF02660358 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 AR 1 1972 1 02 127-153 |
| allfieldsGer |
10.1007/BF02660358 doi (DE-627)OLC2042249165 (DE-He213)BF02660358-p DE-627 ger DE-627 rakwb eng 670 VZ Archer, R. J. verfasserin aut Materials for light emitting diodes 1972 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1972 Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. Luminous Efficacy Enthalten in Journal of electronic materials Springer-Verlag, 1972 1(1972), 1 vom: Feb., Seite 127-153 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:1 year:1972 number:1 month:02 pages:127-153 https://doi.org/10.1007/BF02660358 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 AR 1 1972 1 02 127-153 |
| allfieldsSound |
10.1007/BF02660358 doi (DE-627)OLC2042249165 (DE-He213)BF02660358-p DE-627 ger DE-627 rakwb eng 670 VZ Archer, R. J. verfasserin aut Materials for light emitting diodes 1972 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1972 Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. Luminous Efficacy Enthalten in Journal of electronic materials Springer-Verlag, 1972 1(1972), 1 vom: Feb., Seite 127-153 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:1 year:1972 number:1 month:02 pages:127-153 https://doi.org/10.1007/BF02660358 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 AR 1 1972 1 02 127-153 |
| language |
English |
| source |
Enthalten in Journal of electronic materials 1(1972), 1 vom: Feb., Seite 127-153 volume:1 year:1972 number:1 month:02 pages:127-153 |
| sourceStr |
Enthalten in Journal of electronic materials 1(1972), 1 vom: Feb., Seite 127-153 volume:1 year:1972 number:1 month:02 pages:127-153 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Luminous Efficacy |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Journal of electronic materials |
| authorswithroles_txt_mv |
Archer, R. J. @@aut@@ |
| publishDateDaySort_date |
1972-02-01T00:00:00Z |
| hierarchy_top_id |
129398233 |
| dewey-sort |
3670 |
| id |
OLC2042249165 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042249165</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230506021220.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1972 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02660358</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042249165</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02660358-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Archer, R. J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Materials for light emitting diodes</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1972</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Metallurgical of Society of AIME 1972</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Luminous Efficacy</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer-Verlag, 1972</subfield><subfield code="g">1(1972), 1 vom: Feb., Seite 127-153</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:1</subfield><subfield code="g">year:1972</subfield><subfield code="g">number:1</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:127-153</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02660358</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">1</subfield><subfield code="j">1972</subfield><subfield code="e">1</subfield><subfield code="c">02</subfield><subfield code="h">127-153</subfield></datafield></record></collection>
|
| author |
Archer, R. J. |
| spellingShingle |
Archer, R. J. ddc 670 misc Luminous Efficacy Materials for light emitting diodes |
| authorStr |
Archer, R. J. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129398233 |
| format |
Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0361-5235 |
| topic_title |
670 VZ Materials for light emitting diodes Luminous Efficacy |
| topic |
ddc 670 misc Luminous Efficacy |
| topic_unstemmed |
ddc 670 misc Luminous Efficacy |
| topic_browse |
ddc 670 misc Luminous Efficacy |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of electronic materials |
| hierarchy_parent_id |
129398233 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Journal of electronic materials |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 |
| title |
Materials for light emitting diodes |
| ctrlnum |
(DE-627)OLC2042249165 (DE-He213)BF02660358-p |
| title_full |
Materials for light emitting diodes |
| author_sort |
Archer, R. J. |
| journal |
Journal of electronic materials |
| journalStr |
Journal of electronic materials |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1972 |
| contenttype_str_mv |
txt |
| container_start_page |
127 |
| author_browse |
Archer, R. J. |
| container_volume |
1 |
| class |
670 VZ |
| format_se |
Aufsätze |
| author-letter |
Archer, R. J. |
| doi_str_mv |
10.1007/BF02660358 |
| dewey-full |
670 |
| title_sort |
materials for light emitting diodes |
| title_auth |
Materials for light emitting diodes |
| abstract |
Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. © The Metallurgical of Society of AIME 1972 |
| abstractGer |
Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. © The Metallurgical of Society of AIME 1972 |
| abstract_unstemmed |
Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors. © The Metallurgical of Society of AIME 1972 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 |
| container_issue |
1 |
| title_short |
Materials for light emitting diodes |
| url |
https://doi.org/10.1007/BF02660358 |
| remote_bool |
false |
| ppnlink |
129398233 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/BF02660358 |
| up_date |
2024-07-03T14:23:56.689Z |
| _version_ |
1803568164833853440 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042249165</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230506021220.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1972 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02660358</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042249165</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02660358-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Archer, R. J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Materials for light emitting diodes</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1972</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Metallurgical of Society of AIME 1972</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of $ Al_{x} $$ Ga_{1-x} $P in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Luminous Efficacy</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer-Verlag, 1972</subfield><subfield code="g">1(1972), 1 vom: Feb., Seite 127-153</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:1</subfield><subfield code="g">year:1972</subfield><subfield code="g">number:1</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:127-153</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02660358</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">1</subfield><subfield code="j">1972</subfield><subfield code="e">1</subfield><subfield code="c">02</subfield><subfield code="h">127-153</subfield></datafield></record></collection>
|
| score |
7.400668 |