Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb
Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth techn...
Ausführliche Beschreibung
Autor*in: |
Gertner, E. R. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
1979 |
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Anmerkung: |
© AIME 1979 |
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Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 8(1979), 4 vom: Juli, Seite 545-554 |
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Übergeordnetes Werk: |
volume:8 ; year:1979 ; number:4 ; month:07 ; pages:545-554 |
Links: |
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DOI / URN: |
10.1007/BF02652405 |
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Katalog-ID: |
OLC2042252743 |
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520 | |a Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. | ||
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10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
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10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
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10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
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10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
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10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
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Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
abstract |
Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. © AIME 1979 |
abstractGer |
Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. © AIME 1979 |
abstract_unstemmed |
Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. © AIME 1979 |
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title_short |
Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
url |
https://doi.org/10.1007/BF02652405 |
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author2 |
Andrews, A. M. Bubulac, L. O. Cheung, D. T. Ludowise, M. J. Riedel, R. A. |
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Andrews, A. M. Bubulac, L. O. Cheung, D. T. Ludowise, M. J. Riedel, R. A. |
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doi_str |
10.1007/BF02652405 |
up_date |
2024-07-03T14:24:43.346Z |
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