Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb
Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth techn...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gertner, E. R. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1979 |
|---|
| Anmerkung: |
© AIME 1979 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 8(1979), 4 vom: Juli, Seite 545-554 |
|---|---|
| Übergeordnetes Werk: |
volume:8 ; year:1979 ; number:4 ; month:07 ; pages:545-554 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02652405 |
|---|
| Katalog-ID: |
OLC2042252743 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2042252743 | ||
| 003 | DE-627 | ||
| 005 | 20230506021222.0 | ||
| 007 | tu | ||
| 008 | 200820s1979 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/BF02652405 |2 doi | |
| 035 | |a (DE-627)OLC2042252743 | ||
| 035 | |a (DE-He213)BF02652405-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q VZ |
| 100 | 1 | |a Gertner, E. R. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
| 264 | 1 | |c 1979 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © AIME 1979 | ||
| 520 | |a Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. | ||
| 700 | 1 | |a Andrews, A. M. |4 aut | |
| 700 | 1 | |a Bubulac, L. O. |4 aut | |
| 700 | 1 | |a Cheung, D. T. |4 aut | |
| 700 | 1 | |a Ludowise, M. J. |4 aut | |
| 700 | 1 | |a Riedel, R. A. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of electronic materials |d Springer-Verlag, 1972 |g 8(1979), 4 vom: Juli, Seite 545-554 |w (DE-627)129398233 |w (DE-600)186069-0 |w (DE-576)014781387 |x 0361-5235 |7 nnns |
| 773 | 1 | 8 | |g volume:8 |g year:1979 |g number:4 |g month:07 |g pages:545-554 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/BF02652405 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_21 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4266 | ||
| 912 | |a GBV_ILN_4318 | ||
| 912 | |a GBV_ILN_4319 | ||
| 912 | |a GBV_ILN_4336 | ||
| 951 | |a AR | ||
| 952 | |d 8 |j 1979 |e 4 |c 07 |h 545-554 | ||
| author_variant |
e r g er erg a m a am ama l o b lo lob d t c dt dtc m j l mj mjl r a r ra rar |
|---|---|
| matchkey_str |
article:03615235:1979----::iudhseiailrwhfns |
| hierarchy_sort_str |
1979 |
| publishDate |
1979 |
| allfields |
10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
| spelling |
10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
| allfields_unstemmed |
10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
| allfieldsGer |
10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
| allfieldsSound |
10.1007/BF02652405 doi (DE-627)OLC2042252743 (DE-He213)BF02652405-p DE-627 ger DE-627 rakwb eng 670 VZ Gertner, E. R. verfasserin aut Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb 1979 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1979 Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. Andrews, A. M. aut Bubulac, L. O. aut Cheung, D. T. aut Ludowise, M. J. aut Riedel, R. A. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 8(1979), 4 vom: Juli, Seite 545-554 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:8 year:1979 number:4 month:07 pages:545-554 https://doi.org/10.1007/BF02652405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 AR 8 1979 4 07 545-554 |
| language |
English |
| source |
Enthalten in Journal of electronic materials 8(1979), 4 vom: Juli, Seite 545-554 volume:8 year:1979 number:4 month:07 pages:545-554 |
| sourceStr |
Enthalten in Journal of electronic materials 8(1979), 4 vom: Juli, Seite 545-554 volume:8 year:1979 number:4 month:07 pages:545-554 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Journal of electronic materials |
| authorswithroles_txt_mv |
Gertner, E. R. @@aut@@ Andrews, A. M. @@aut@@ Bubulac, L. O. @@aut@@ Cheung, D. T. @@aut@@ Ludowise, M. J. @@aut@@ Riedel, R. A. @@aut@@ |
| publishDateDaySort_date |
1979-07-01T00:00:00Z |
| hierarchy_top_id |
129398233 |
| dewey-sort |
3670 |
| id |
OLC2042252743 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042252743</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230506021222.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1979 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02652405</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042252743</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02652405-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Gertner, E. R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1979</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© AIME 1979</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Andrews, A. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bubulac, L. O.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cheung, D. T.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ludowise, M. J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Riedel, R. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer-Verlag, 1972</subfield><subfield code="g">8(1979), 4 vom: Juli, Seite 545-554</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:8</subfield><subfield code="g">year:1979</subfield><subfield code="g">number:4</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:545-554</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02652405</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">8</subfield><subfield code="j">1979</subfield><subfield code="e">4</subfield><subfield code="c">07</subfield><subfield code="h">545-554</subfield></datafield></record></collection>
|
| author |
Gertner, E. R. |
| spellingShingle |
Gertner, E. R. ddc 670 Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
| authorStr |
Gertner, E. R. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129398233 |
| format |
Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0361-5235 |
| topic_title |
670 VZ Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of electronic materials |
| hierarchy_parent_id |
129398233 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Journal of electronic materials |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 |
| title |
Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
| ctrlnum |
(DE-627)OLC2042252743 (DE-He213)BF02652405-p |
| title_full |
Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
| author_sort |
Gertner, E. R. |
| journal |
Journal of electronic materials |
| journalStr |
Journal of electronic materials |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1979 |
| contenttype_str_mv |
txt |
| container_start_page |
545 |
| author_browse |
Gertner, E. R. Andrews, A. M. Bubulac, L. O. Cheung, D. T. Ludowise, M. J. Riedel, R. A. |
| container_volume |
8 |
| class |
670 VZ |
| format_se |
Aufsätze |
| author-letter |
Gertner, E. R. |
| doi_str_mv |
10.1007/BF02652405 |
| dewey-full |
670 |
| title_sort |
liquid phase epitaxial growth of $ inas_{1-x} $$ sb_{x} $ on gasb |
| title_auth |
Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
| abstract |
Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. © AIME 1979 |
| abstractGer |
Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. © AIME 1979 |
| abstract_unstemmed |
Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. © AIME 1979 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 |
| container_issue |
4 |
| title_short |
Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb |
| url |
https://doi.org/10.1007/BF02652405 |
| remote_bool |
false |
| author2 |
Andrews, A. M. Bubulac, L. O. Cheung, D. T. Ludowise, M. J. Riedel, R. A. |
| author2Str |
Andrews, A. M. Bubulac, L. O. Cheung, D. T. Ludowise, M. J. Riedel, R. A. |
| ppnlink |
129398233 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/BF02652405 |
| up_date |
2024-07-03T14:24:43.346Z |
| _version_ |
1803568213766701056 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042252743</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230506021222.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1979 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02652405</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042252743</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02652405-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Gertner, E. R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Liquid phase epitaxial growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1979</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© AIME 1979</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Reported here, for the first time, is the lattice matched growth of $ InAs_{1-x} $$ Sb_{x} $ on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than $ 10^{4} $-$ cm^{−2} $ and $ 10^{5} $-$ cm^{−4} $, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Andrews, A. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bubulac, L. O.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cheung, D. T.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ludowise, M. J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Riedel, R. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer-Verlag, 1972</subfield><subfield code="g">8(1979), 4 vom: Juli, Seite 545-554</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:8</subfield><subfield code="g">year:1979</subfield><subfield code="g">number:4</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:545-554</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02652405</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">8</subfield><subfield code="j">1979</subfield><subfield code="e">4</subfield><subfield code="c">07</subfield><subfield code="h">545-554</subfield></datafield></record></collection>
|
| score |
7.3984547 |