Refractive index of GaAs-AlAs superlattice grown by MBE

Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is de...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Suzuki, Yoshifumi [verfasserIn] Okamoto, Hiroshi

Format:	Artikel
Sprache:	Englisch

Erschienen:	1983

Anmerkung:	© AIME 1983

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 12(1983), 2 vom: März, Seite 397-411
Übergeordnetes Werk:	volume:12 ; year:1983 ; number:2 ; month:03 ; pages:397-411

Links:	Volltext

DOI / URN:	10.1007/BF02651139

Katalog-ID:	OLC2042255149

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520			\|a Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)).
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allfields	10.1007/BF02651139 doi (DE-627)OLC2042255149 (DE-He213)BF02651139-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, Yoshifumi verfasserin aut Refractive index of GaAs-AlAs superlattice grown by MBE 1983 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1983 Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)). Okamoto, Hiroshi aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 12(1983), 2 vom: März, Seite 397-411 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:12 year:1983 number:2 month:03 pages:397-411 https://doi.org/10.1007/BF02651139 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 12 1983 2 03 397-411
spelling	10.1007/BF02651139 doi (DE-627)OLC2042255149 (DE-He213)BF02651139-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, Yoshifumi verfasserin aut Refractive index of GaAs-AlAs superlattice grown by MBE 1983 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1983 Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)). Okamoto, Hiroshi aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 12(1983), 2 vom: März, Seite 397-411 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:12 year:1983 number:2 month:03 pages:397-411 https://doi.org/10.1007/BF02651139 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 12 1983 2 03 397-411
allfields_unstemmed	10.1007/BF02651139 doi (DE-627)OLC2042255149 (DE-He213)BF02651139-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, Yoshifumi verfasserin aut Refractive index of GaAs-AlAs superlattice grown by MBE 1983 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1983 Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)). Okamoto, Hiroshi aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 12(1983), 2 vom: März, Seite 397-411 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:12 year:1983 number:2 month:03 pages:397-411 https://doi.org/10.1007/BF02651139 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 12 1983 2 03 397-411
allfieldsGer	10.1007/BF02651139 doi (DE-627)OLC2042255149 (DE-He213)BF02651139-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, Yoshifumi verfasserin aut Refractive index of GaAs-AlAs superlattice grown by MBE 1983 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1983 Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)). Okamoto, Hiroshi aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 12(1983), 2 vom: März, Seite 397-411 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:12 year:1983 number:2 month:03 pages:397-411 https://doi.org/10.1007/BF02651139 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 12 1983 2 03 397-411
allfieldsSound	10.1007/BF02651139 doi (DE-627)OLC2042255149 (DE-He213)BF02651139-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, Yoshifumi verfasserin aut Refractive index of GaAs-AlAs superlattice grown by MBE 1983 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1983 Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)). Okamoto, Hiroshi aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 12(1983), 2 vom: März, Seite 397-411 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:12 year:1983 number:2 month:03 pages:397-411 https://doi.org/10.1007/BF02651139 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2020 GBV_ILN_4035 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 12 1983 2 03 397-411
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title	Refractive index of GaAs-AlAs superlattice grown by MBE
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title_sort	refractive index of gaas-alas superlattice grown by mbe
title_auth	Refractive index of GaAs-AlAs superlattice grown by MBE
abstract	Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)). © AIME 1983
abstractGer	Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)). © AIME 1983
abstract_unstemmed	Abstract Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with $ L_{B} $ ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with $ L_{B} $ ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes ($ E_{1} $(e-hh)). © AIME 1983
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title_short	Refractive index of GaAs-AlAs superlattice grown by MBE
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Refractive index of GaAs-AlAs superlattice grown by MBE

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