The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen

Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or hig...
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Autor*in:	Ryu, J. [verfasserIn] Kim, H. J. Glass, J. T. Davis, R. F.

Format:	Artikel
Sprache:	Englisch

Erschienen:	1989

Anmerkung:	© AIME 1989

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 18(1989), 2 vom: März, Seite 157-165
Übergeordnetes Werk:	volume:18 ; year:1989 ; number:2 ; month:03 ; pages:157-165

Links:	Volltext

DOI / URN:	10.1007/BF02657402

Katalog-ID:	OLC2042259101

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allfields	10.1007/BF02657402 doi (DE-627)OLC2042259101 (DE-He213)BF02657402-p DE-627 ger DE-627 rakwb eng 670 VZ Ryu, J. verfasserin aut The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1989 Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials. Kim, H. J. aut Glass, J. T. aut Davis, R. F. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 18(1989), 2 vom: März, Seite 157-165 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:18 year:1989 number:2 month:03 pages:157-165 https://doi.org/10.1007/BF02657402 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 18 1989 2 03 157-165
spelling	10.1007/BF02657402 doi (DE-627)OLC2042259101 (DE-He213)BF02657402-p DE-627 ger DE-627 rakwb eng 670 VZ Ryu, J. verfasserin aut The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1989 Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials. Kim, H. J. aut Glass, J. T. aut Davis, R. F. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 18(1989), 2 vom: März, Seite 157-165 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:18 year:1989 number:2 month:03 pages:157-165 https://doi.org/10.1007/BF02657402 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 18 1989 2 03 157-165
allfields_unstemmed	10.1007/BF02657402 doi (DE-627)OLC2042259101 (DE-He213)BF02657402-p DE-627 ger DE-627 rakwb eng 670 VZ Ryu, J. verfasserin aut The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1989 Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials. Kim, H. J. aut Glass, J. T. aut Davis, R. F. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 18(1989), 2 vom: März, Seite 157-165 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:18 year:1989 number:2 month:03 pages:157-165 https://doi.org/10.1007/BF02657402 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 18 1989 2 03 157-165
allfieldsGer	10.1007/BF02657402 doi (DE-627)OLC2042259101 (DE-He213)BF02657402-p DE-627 ger DE-627 rakwb eng 670 VZ Ryu, J. verfasserin aut The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1989 Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials. Kim, H. J. aut Glass, J. T. aut Davis, R. F. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 18(1989), 2 vom: März, Seite 157-165 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:18 year:1989 number:2 month:03 pages:157-165 https://doi.org/10.1007/BF02657402 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 18 1989 2 03 157-165
allfieldsSound	10.1007/BF02657402 doi (DE-627)OLC2042259101 (DE-He213)BF02657402-p DE-627 ger DE-627 rakwb eng 670 VZ Ryu, J. verfasserin aut The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © AIME 1989 Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials. Kim, H. J. aut Glass, J. T. aut Davis, R. F. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 18(1989), 2 vom: März, Seite 157-165 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:18 year:1989 number:2 month:03 pages:157-165 https://doi.org/10.1007/BF02657402 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4336 GBV_ILN_4700 AR 18 1989 2 03 157-165
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title	The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen
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title_sort	the effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen
title_auth	The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen
abstract	Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials. © AIME 1989
abstractGer	Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials. © AIME 1989
abstract_unstemmed	Abstract The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials. © AIME 1989
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title_short	The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen
url	https://doi.org/10.1007/BF02657402
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author2	Kim, H. J. Glass, J. T. Davis, R. F.
author2Str	Kim, H. J. Glass, J. T. Davis, R. F.
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doi_str	10.1007/BF02657402
up_date	2024-07-03T14:26:14.795Z
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The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen

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