Template approaches to growth of oriented oxide heterostructures on $ SiO_{2} $/Si
Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “te...
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Gespeichert in:
| Autor*in: |
Ramesh, R. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1994 |
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| Anmerkung: |
© The Mineral, Metal & Materials Society, Inc. 1994 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 23(1994), 1 vom: Jan., Seite 19-23 |
|---|---|
| Übergeordnetes Werk: |
volume:23 ; year:1994 ; number:1 ; month:01 ; pages:19-23 |
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10.1007/BF02651262 |
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| 520 | |a Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. | ||
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10.1007/BF02651262 doi (DE-627)OLC2042268232 (DE-He213)BF02651262-p DE-627 ger DE-627 rakwb eng 670 VZ Ramesh, R. verfasserin aut Template approaches to growth of oriented oxide heterostructures on $ SiO_{2} $/Si 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Mineral, Metal & Materials Society, Inc. 1994 Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. Sands, T. aut Keramidas, V. G. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 23(1994), 1 vom: Jan., Seite 19-23 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:23 year:1994 number:1 month:01 pages:19-23 https://doi.org/10.1007/BF02651262 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 23 1994 1 01 19-23 |
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10.1007/BF02651262 doi (DE-627)OLC2042268232 (DE-He213)BF02651262-p DE-627 ger DE-627 rakwb eng 670 VZ Ramesh, R. verfasserin aut Template approaches to growth of oriented oxide heterostructures on $ SiO_{2} $/Si 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Mineral, Metal & Materials Society, Inc. 1994 Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. Sands, T. aut Keramidas, V. G. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 23(1994), 1 vom: Jan., Seite 19-23 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:23 year:1994 number:1 month:01 pages:19-23 https://doi.org/10.1007/BF02651262 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 23 1994 1 01 19-23 |
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10.1007/BF02651262 doi (DE-627)OLC2042268232 (DE-He213)BF02651262-p DE-627 ger DE-627 rakwb eng 670 VZ Ramesh, R. verfasserin aut Template approaches to growth of oriented oxide heterostructures on $ SiO_{2} $/Si 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Mineral, Metal & Materials Society, Inc. 1994 Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. Sands, T. aut Keramidas, V. G. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 23(1994), 1 vom: Jan., Seite 19-23 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:23 year:1994 number:1 month:01 pages:19-23 https://doi.org/10.1007/BF02651262 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 23 1994 1 01 19-23 |
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10.1007/BF02651262 doi (DE-627)OLC2042268232 (DE-He213)BF02651262-p DE-627 ger DE-627 rakwb eng 670 VZ Ramesh, R. verfasserin aut Template approaches to growth of oriented oxide heterostructures on $ SiO_{2} $/Si 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Mineral, Metal & Materials Society, Inc. 1994 Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. Sands, T. aut Keramidas, V. G. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 23(1994), 1 vom: Jan., Seite 19-23 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:23 year:1994 number:1 month:01 pages:19-23 https://doi.org/10.1007/BF02651262 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 23 1994 1 01 19-23 |
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10.1007/BF02651262 doi (DE-627)OLC2042268232 (DE-He213)BF02651262-p DE-627 ger DE-627 rakwb eng 670 VZ Ramesh, R. verfasserin aut Template approaches to growth of oriented oxide heterostructures on $ SiO_{2} $/Si 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Mineral, Metal & Materials Society, Inc. 1994 Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. Sands, T. aut Keramidas, V. G. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 23(1994), 1 vom: Jan., Seite 19-23 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:23 year:1994 number:1 month:01 pages:19-23 https://doi.org/10.1007/BF02651262 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 23 1994 1 01 19-23 |
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Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. © The Mineral, Metal & Materials Society, Inc. 1994 |
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Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. © The Mineral, Metal & Materials Society, Inc. 1994 |
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Abstract A template approach to growing highly oriented ferroelectric oxide heterostructures on $ SiO_{2} $/Si substrates is presented. In this method, a thin “template” of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this “template” approach is illustrated through the example of growth of ferroelectric La-Sr-Co-0/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on $ SiO_{2} $Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10–15 μ C/$ cm^{2} $ and show very little degradation after $ 10^{11} $ bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties. © The Mineral, Metal & Materials Society, Inc. 1994 |
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Template approaches to growth of oriented oxide heterostructures on $ SiO_{2} $/Si |
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Sands, T. Keramidas, V. G. |
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