Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy
Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate s...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zandian, M. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1995 |
|---|
| Anmerkung: |
© The Metallurgical of Society of AIME 1995 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 24(1995), 9 vom: Sept., Seite 1207-1210 |
|---|---|
| Übergeordnetes Werk: |
volume:24 ; year:1995 ; number:9 ; month:09 ; pages:1207-1210 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02653075 |
|---|
| Katalog-ID: |
OLC2042272035 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2042272035 | ||
| 003 | DE-627 | ||
| 005 | 20230303063654.0 | ||
| 007 | tu | ||
| 008 | 200820s1995 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/BF02653075 |2 doi | |
| 035 | |a (DE-627)OLC2042272035 | ||
| 035 | |a (DE-He213)BF02653075-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q VZ |
| 100 | 1 | |a Zandian, M. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy |
| 264 | 1 | |c 1995 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © The Metallurgical of Society of AIME 1995 | ||
| 520 | |a Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. | ||
| 700 | 1 | |a Arias, J. M. |4 aut | |
| 700 | 1 | |a Bajaj, J. |4 aut | |
| 700 | 1 | |a Pasko, J. G. |4 aut | |
| 700 | 1 | |a Bubulac, L. O. |4 aut | |
| 700 | 1 | |a Dewames, R. E. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of electronic materials |d Springer-Verlag, 1972 |g 24(1995), 9 vom: Sept., Seite 1207-1210 |w (DE-627)129398233 |w (DE-600)186069-0 |w (DE-576)014781387 |x 0361-5235 |7 nnns |
| 773 | 1 | 8 | |g volume:24 |g year:1995 |g number:9 |g month:09 |g pages:1207-1210 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/BF02653075 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2010 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_4036 | ||
| 912 | |a GBV_ILN_4266 | ||
| 912 | |a GBV_ILN_4318 | ||
| 912 | |a GBV_ILN_4319 | ||
| 912 | |a GBV_ILN_4700 | ||
| 951 | |a AR | ||
| 952 | |d 24 |j 1995 |e 9 |c 09 |h 1207-1210 | ||
| author_variant |
m z mz j m a jm jma j b jb j g p jg jgp l o b lo lob r e d re red |
|---|---|
| matchkey_str |
article:03615235:1995----::rgnfodeetih_xdxerwbml |
| hierarchy_sort_str |
1995 |
| publishDate |
1995 |
| allfields |
10.1007/BF02653075 doi (DE-627)OLC2042272035 (DE-He213)BF02653075-p DE-627 ger DE-627 rakwb eng 670 VZ Zandian, M. verfasserin aut Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. Arias, J. M. aut Bajaj, J. aut Pasko, J. G. aut Bubulac, L. O. aut Dewames, R. E. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1207-1210 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1207-1210 https://doi.org/10.1007/BF02653075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1207-1210 |
| spelling |
10.1007/BF02653075 doi (DE-627)OLC2042272035 (DE-He213)BF02653075-p DE-627 ger DE-627 rakwb eng 670 VZ Zandian, M. verfasserin aut Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. Arias, J. M. aut Bajaj, J. aut Pasko, J. G. aut Bubulac, L. O. aut Dewames, R. E. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1207-1210 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1207-1210 https://doi.org/10.1007/BF02653075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1207-1210 |
| allfields_unstemmed |
10.1007/BF02653075 doi (DE-627)OLC2042272035 (DE-He213)BF02653075-p DE-627 ger DE-627 rakwb eng 670 VZ Zandian, M. verfasserin aut Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. Arias, J. M. aut Bajaj, J. aut Pasko, J. G. aut Bubulac, L. O. aut Dewames, R. E. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1207-1210 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1207-1210 https://doi.org/10.1007/BF02653075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1207-1210 |
| allfieldsGer |
10.1007/BF02653075 doi (DE-627)OLC2042272035 (DE-He213)BF02653075-p DE-627 ger DE-627 rakwb eng 670 VZ Zandian, M. verfasserin aut Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. Arias, J. M. aut Bajaj, J. aut Pasko, J. G. aut Bubulac, L. O. aut Dewames, R. E. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1207-1210 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1207-1210 https://doi.org/10.1007/BF02653075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1207-1210 |
| allfieldsSound |
10.1007/BF02653075 doi (DE-627)OLC2042272035 (DE-He213)BF02653075-p DE-627 ger DE-627 rakwb eng 670 VZ Zandian, M. verfasserin aut Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. Arias, J. M. aut Bajaj, J. aut Pasko, J. G. aut Bubulac, L. O. aut Dewames, R. E. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1207-1210 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1207-1210 https://doi.org/10.1007/BF02653075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1207-1210 |
| language |
English |
| source |
Enthalten in Journal of electronic materials 24(1995), 9 vom: Sept., Seite 1207-1210 volume:24 year:1995 number:9 month:09 pages:1207-1210 |
| sourceStr |
Enthalten in Journal of electronic materials 24(1995), 9 vom: Sept., Seite 1207-1210 volume:24 year:1995 number:9 month:09 pages:1207-1210 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Journal of electronic materials |
| authorswithroles_txt_mv |
Zandian, M. @@aut@@ Arias, J. M. @@aut@@ Bajaj, J. @@aut@@ Pasko, J. G. @@aut@@ Bubulac, L. O. @@aut@@ Dewames, R. E. @@aut@@ |
| publishDateDaySort_date |
1995-09-01T00:00:00Z |
| hierarchy_top_id |
129398233 |
| dewey-sort |
3670 |
| id |
OLC2042272035 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042272035</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230303063654.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1995 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02653075</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042272035</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02653075-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zandian, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1995</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Metallurgical of Society of AIME 1995</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arias, J. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bajaj, J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pasko, J. G.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bubulac, L. O.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dewames, R. E.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer-Verlag, 1972</subfield><subfield code="g">24(1995), 9 vom: Sept., Seite 1207-1210</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:24</subfield><subfield code="g">year:1995</subfield><subfield code="g">number:9</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:1207-1210</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02653075</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">24</subfield><subfield code="j">1995</subfield><subfield code="e">9</subfield><subfield code="c">09</subfield><subfield code="h">1207-1210</subfield></datafield></record></collection>
|
| author |
Zandian, M. |
| spellingShingle |
Zandian, M. ddc 670 Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy |
| authorStr |
Zandian, M. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129398233 |
| format |
Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0361-5235 |
| topic_title |
670 VZ Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of electronic materials |
| hierarchy_parent_id |
129398233 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Journal of electronic materials |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 |
| title |
Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy |
| ctrlnum |
(DE-627)OLC2042272035 (DE-He213)BF02653075-p |
| title_full |
Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy |
| author_sort |
Zandian, M. |
| journal |
Journal of electronic materials |
| journalStr |
Journal of electronic materials |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1995 |
| contenttype_str_mv |
txt |
| container_start_page |
1207 |
| author_browse |
Zandian, M. Arias, J. M. Bajaj, J. Pasko, J. G. Bubulac, L. O. Dewames, R. E. |
| container_volume |
24 |
| class |
670 VZ |
| format_se |
Aufsätze |
| author-letter |
Zandian, M. |
| doi_str_mv |
10.1007/BF02653075 |
| dewey-full |
670 |
| title_sort |
origin of void defects in $ hg_{1−x} $$ cd_{x} $te grown by molecular beam epitaxy |
| title_auth |
Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy |
| abstract |
Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. © The Metallurgical of Society of AIME 1995 |
| abstractGer |
Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. © The Metallurgical of Society of AIME 1995 |
| abstract_unstemmed |
Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%. © The Metallurgical of Society of AIME 1995 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 |
| container_issue |
9 |
| title_short |
Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy |
| url |
https://doi.org/10.1007/BF02653075 |
| remote_bool |
false |
| author2 |
Arias, J. M. Bajaj, J. Pasko, J. G. Bubulac, L. O. Dewames, R. E. |
| author2Str |
Arias, J. M. Bajaj, J. Pasko, J. G. Bubulac, L. O. Dewames, R. E. |
| ppnlink |
129398233 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/BF02653075 |
| up_date |
2024-07-03T14:29:37.002Z |
| _version_ |
1803568521675800576 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042272035</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230303063654.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1995 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02653075</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042272035</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02653075-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zandian, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Origin of void defects in $ Hg_{1−x} $$ Cd_{x} $Te grown by molecular beam epitaxy</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1995</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Metallurgical of Society of AIME 1995</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Characterization of defects in $ Hg_{1−x} $$ Cd_{x} $Te compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during $ Hg_{1−x} $$ Cd_{x} $Te epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 $ cm^{−2} $. Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arias, J. M.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bajaj, J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pasko, J. G.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bubulac, L. O.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dewames, R. E.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer-Verlag, 1972</subfield><subfield code="g">24(1995), 9 vom: Sept., Seite 1207-1210</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:24</subfield><subfield code="g">year:1995</subfield><subfield code="g">number:9</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:1207-1210</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02653075</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">24</subfield><subfield code="j">1995</subfield><subfield code="e">9</subfield><subfield code="c">09</subfield><subfield code="h">1207-1210</subfield></datafield></record></collection>
|
| score |
7.4000463 |