Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs
Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in th...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Dhar, N. K. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1995 |
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| Anmerkung: |
© The Metallurgical of Society of AIME 1995 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 24(1995), 9 vom: Sept., Seite 1041-1046 |
|---|---|
| Übergeordnetes Werk: |
volume:24 ; year:1995 ; number:9 ; month:09 ; pages:1041-1046 |
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| DOI / URN: |
10.1007/BF02653050 |
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| 520 | |a Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. | ||
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| 700 | 1 | |a Dinan, J. H. |4 aut | |
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10.1007/BF02653050 doi (DE-627)OLC2042272280 (DE-He213)BF02653050-p DE-627 ger DE-627 rakwb eng 670 VZ Dhar, N. K. verfasserin aut Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. Wood, C. E. C. aut Boyd, P. R. aut Pollehn, H. K. aut Martinka, M. aut Benson, J. D. aut Dinan, J. H. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1041-1046 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1041-1046 https://doi.org/10.1007/BF02653050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1041-1046 |
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10.1007/BF02653050 doi (DE-627)OLC2042272280 (DE-He213)BF02653050-p DE-627 ger DE-627 rakwb eng 670 VZ Dhar, N. K. verfasserin aut Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. Wood, C. E. C. aut Boyd, P. R. aut Pollehn, H. K. aut Martinka, M. aut Benson, J. D. aut Dinan, J. H. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1041-1046 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1041-1046 https://doi.org/10.1007/BF02653050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1041-1046 |
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10.1007/BF02653050 doi (DE-627)OLC2042272280 (DE-He213)BF02653050-p DE-627 ger DE-627 rakwb eng 670 VZ Dhar, N. K. verfasserin aut Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. Wood, C. E. C. aut Boyd, P. R. aut Pollehn, H. K. aut Martinka, M. aut Benson, J. D. aut Dinan, J. H. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1041-1046 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1041-1046 https://doi.org/10.1007/BF02653050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1041-1046 |
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10.1007/BF02653050 doi (DE-627)OLC2042272280 (DE-He213)BF02653050-p DE-627 ger DE-627 rakwb eng 670 VZ Dhar, N. K. verfasserin aut Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. Wood, C. E. C. aut Boyd, P. R. aut Pollehn, H. K. aut Martinka, M. aut Benson, J. D. aut Dinan, J. H. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1041-1046 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1041-1046 https://doi.org/10.1007/BF02653050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1041-1046 |
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10.1007/BF02653050 doi (DE-627)OLC2042272280 (DE-He213)BF02653050-p DE-627 ger DE-627 rakwb eng 670 VZ Dhar, N. K. verfasserin aut Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Metallurgical of Society of AIME 1995 Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. Wood, C. E. C. aut Boyd, P. R. aut Pollehn, H. K. aut Martinka, M. aut Benson, J. D. aut Dinan, J. H. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 24(1995), 9 vom: Sept., Seite 1041-1046 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:24 year:1995 number:9 month:09 pages:1041-1046 https://doi.org/10.1007/BF02653050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 24 1995 9 09 1041-1046 |
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two-dimensional molecular beam epitaxy of {001} cdte on cd and zn terminated {001} gaas |
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Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs |
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Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. © The Metallurgical of Society of AIME 1995 |
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Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. © The Metallurgical of Society of AIME 1995 |
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Abstract Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x $ 10^{5} $ $ cm^{−2} $. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s. © The Metallurgical of Society of AIME 1995 |
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Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs |
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Wood, C. E. C. Boyd, P. R. Pollehn, H. K. Martinka, M. Benson, J. D. Dinan, J. H. |
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