Controlled thermal kinetics in RTP
Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes,...
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| Autor*in: |
Niess, J. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1998 |
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| Anmerkung: |
© TMS-The Minerals, Metals and Materials Society 1998 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 27(1998), 12 vom: Dez., Seite 1286-1290 |
|---|---|
| Übergeordnetes Werk: |
volume:27 ; year:1998 ; number:12 ; month:12 ; pages:1286-1290 |
| Links: |
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| DOI / URN: |
10.1007/s11664-998-0087-2 |
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OLC204228159X |
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| 520 | |a Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes, a short time “flash” annealing at higher temperatures is often more advantageous than the conventional temperature-time functions for 10–60 s with linear ramps. We have to optimize two phenomena simultaneously: the most effective dopant activation and defect removal without dopant loss. At the same time dopant profile redistribution is to be limited as much as possible. Beside the thermal kinetics of implant annealing, a proper surface control is also very important. Surface etching due to SiO formation with subsequent implant evaporation is as detrimental as $ SiO_{2} $ growth with subsequent implant segregation. The importance and possibilities of “controlled thermal kinetics” and “limited concentration” processing mode are shown in some RTA experiments. | ||
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10.1007/s11664-998-0087-2 doi (DE-627)OLC204228159X (DE-He213)s11664-998-0087-2-p DE-627 ger DE-627 rakwb eng 670 VZ Niess, J. verfasserin aut Controlled thermal kinetics in RTP 1998 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 1998 Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes, a short time “flash” annealing at higher temperatures is often more advantageous than the conventional temperature-time functions for 10–60 s with linear ramps. We have to optimize two phenomena simultaneously: the most effective dopant activation and defect removal without dopant loss. At the same time dopant profile redistribution is to be limited as much as possible. Beside the thermal kinetics of implant annealing, a proper surface control is also very important. Surface etching due to SiO formation with subsequent implant evaporation is as detrimental as $ SiO_{2} $ growth with subsequent implant segregation. The importance and possibilities of “controlled thermal kinetics” and “limited concentration” processing mode are shown in some RTA experiments. Grunwald, Ch. aut Strohmaier, R. aut Nényei, Z. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 27(1998), 12 vom: Dez., Seite 1286-1290 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:27 year:1998 number:12 month:12 pages:1286-1290 https://doi.org/10.1007/s11664-998-0087-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1998 12 12 1286-1290 |
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10.1007/s11664-998-0087-2 doi (DE-627)OLC204228159X (DE-He213)s11664-998-0087-2-p DE-627 ger DE-627 rakwb eng 670 VZ Niess, J. verfasserin aut Controlled thermal kinetics in RTP 1998 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 1998 Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes, a short time “flash” annealing at higher temperatures is often more advantageous than the conventional temperature-time functions for 10–60 s with linear ramps. We have to optimize two phenomena simultaneously: the most effective dopant activation and defect removal without dopant loss. At the same time dopant profile redistribution is to be limited as much as possible. Beside the thermal kinetics of implant annealing, a proper surface control is also very important. Surface etching due to SiO formation with subsequent implant evaporation is as detrimental as $ SiO_{2} $ growth with subsequent implant segregation. The importance and possibilities of “controlled thermal kinetics” and “limited concentration” processing mode are shown in some RTA experiments. Grunwald, Ch. aut Strohmaier, R. aut Nényei, Z. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 27(1998), 12 vom: Dez., Seite 1286-1290 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:27 year:1998 number:12 month:12 pages:1286-1290 https://doi.org/10.1007/s11664-998-0087-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1998 12 12 1286-1290 |
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10.1007/s11664-998-0087-2 doi (DE-627)OLC204228159X (DE-He213)s11664-998-0087-2-p DE-627 ger DE-627 rakwb eng 670 VZ Niess, J. verfasserin aut Controlled thermal kinetics in RTP 1998 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 1998 Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes, a short time “flash” annealing at higher temperatures is often more advantageous than the conventional temperature-time functions for 10–60 s with linear ramps. We have to optimize two phenomena simultaneously: the most effective dopant activation and defect removal without dopant loss. At the same time dopant profile redistribution is to be limited as much as possible. Beside the thermal kinetics of implant annealing, a proper surface control is also very important. Surface etching due to SiO formation with subsequent implant evaporation is as detrimental as $ SiO_{2} $ growth with subsequent implant segregation. The importance and possibilities of “controlled thermal kinetics” and “limited concentration” processing mode are shown in some RTA experiments. Grunwald, Ch. aut Strohmaier, R. aut Nényei, Z. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 27(1998), 12 vom: Dez., Seite 1286-1290 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:27 year:1998 number:12 month:12 pages:1286-1290 https://doi.org/10.1007/s11664-998-0087-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1998 12 12 1286-1290 |
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10.1007/s11664-998-0087-2 doi (DE-627)OLC204228159X (DE-He213)s11664-998-0087-2-p DE-627 ger DE-627 rakwb eng 670 VZ Niess, J. verfasserin aut Controlled thermal kinetics in RTP 1998 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 1998 Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes, a short time “flash” annealing at higher temperatures is often more advantageous than the conventional temperature-time functions for 10–60 s with linear ramps. We have to optimize two phenomena simultaneously: the most effective dopant activation and defect removal without dopant loss. At the same time dopant profile redistribution is to be limited as much as possible. Beside the thermal kinetics of implant annealing, a proper surface control is also very important. Surface etching due to SiO formation with subsequent implant evaporation is as detrimental as $ SiO_{2} $ growth with subsequent implant segregation. The importance and possibilities of “controlled thermal kinetics” and “limited concentration” processing mode are shown in some RTA experiments. Grunwald, Ch. aut Strohmaier, R. aut Nényei, Z. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 27(1998), 12 vom: Dez., Seite 1286-1290 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:27 year:1998 number:12 month:12 pages:1286-1290 https://doi.org/10.1007/s11664-998-0087-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1998 12 12 1286-1290 |
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Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes, a short time “flash” annealing at higher temperatures is often more advantageous than the conventional temperature-time functions for 10–60 s with linear ramps. We have to optimize two phenomena simultaneously: the most effective dopant activation and defect removal without dopant loss. At the same time dopant profile redistribution is to be limited as much as possible. Beside the thermal kinetics of implant annealing, a proper surface control is also very important. Surface etching due to SiO formation with subsequent implant evaporation is as detrimental as $ SiO_{2} $ growth with subsequent implant segregation. The importance and possibilities of “controlled thermal kinetics” and “limited concentration” processing mode are shown in some RTA experiments. © TMS-The Minerals, Metals and Materials Society 1998 |
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Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes, a short time “flash” annealing at higher temperatures is often more advantageous than the conventional temperature-time functions for 10–60 s with linear ramps. We have to optimize two phenomena simultaneously: the most effective dopant activation and defect removal without dopant loss. At the same time dopant profile redistribution is to be limited as much as possible. Beside the thermal kinetics of implant annealing, a proper surface control is also very important. Surface etching due to SiO formation with subsequent implant evaporation is as detrimental as $ SiO_{2} $ growth with subsequent implant segregation. The importance and possibilities of “controlled thermal kinetics” and “limited concentration” processing mode are shown in some RTA experiments. © TMS-The Minerals, Metals and Materials Society 1998 |
| abstract_unstemmed |
Abstract Ultra-shallow junction formation is one of the most exciting new challenges for RTP process engineers and vendors. In many cases, reaction rat limited and diffusion limited processes are to be promoted or suppressed in a complementary manner. In the case of reaction rate limited processes, a short time “flash” annealing at higher temperatures is often more advantageous than the conventional temperature-time functions for 10–60 s with linear ramps. We have to optimize two phenomena simultaneously: the most effective dopant activation and defect removal without dopant loss. At the same time dopant profile redistribution is to be limited as much as possible. Beside the thermal kinetics of implant annealing, a proper surface control is also very important. Surface etching due to SiO formation with subsequent implant evaporation is as detrimental as $ SiO_{2} $ growth with subsequent implant segregation. The importance and possibilities of “controlled thermal kinetics” and “limited concentration” processing mode are shown in some RTA experiments. © TMS-The Minerals, Metals and Materials Society 1998 |
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Controlled thermal kinetics in RTP |
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Grunwald, Ch Strohmaier, R. Nényei, Z. |
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