Semi-insulating CdTe with a minimized deep-level doping
Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows...
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| Autor*in: |
Grill, R. [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2005 |
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| Anmerkung: |
© TMS-The Minerals, Metals and Materials Society 2005 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 34(2005), 6 vom: Juni, Seite 939-943 |
|---|---|
| Übergeordnetes Werk: |
volume:34 ; year:2005 ; number:6 ; month:06 ; pages:939-943 |
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| DOI / URN: |
10.1007/s11664-005-0046-0 |
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| 520 | |a Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. | ||
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10.1007/s11664-005-0046-0 doi (DE-627)OLC2042297674 (DE-He213)s11664-005-0046-0-p DE-627 ger DE-627 rakwb eng 670 VZ Grill, R. verfasserin aut Semi-insulating CdTe with a minimized deep-level doping 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2005 Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. Franc, J. aut Turkevych, I. aut HöSchl, P. aut Belas, E. aut Moravec, P. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 34(2005), 6 vom: Juni, Seite 939-943 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:34 year:2005 number:6 month:06 pages:939-943 https://doi.org/10.1007/s11664-005-0046-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4319 AR 34 2005 6 06 939-943 |
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10.1007/s11664-005-0046-0 doi (DE-627)OLC2042297674 (DE-He213)s11664-005-0046-0-p DE-627 ger DE-627 rakwb eng 670 VZ Grill, R. verfasserin aut Semi-insulating CdTe with a minimized deep-level doping 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2005 Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. Franc, J. aut Turkevych, I. aut HöSchl, P. aut Belas, E. aut Moravec, P. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 34(2005), 6 vom: Juni, Seite 939-943 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:34 year:2005 number:6 month:06 pages:939-943 https://doi.org/10.1007/s11664-005-0046-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4319 AR 34 2005 6 06 939-943 |
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10.1007/s11664-005-0046-0 doi (DE-627)OLC2042297674 (DE-He213)s11664-005-0046-0-p DE-627 ger DE-627 rakwb eng 670 VZ Grill, R. verfasserin aut Semi-insulating CdTe with a minimized deep-level doping 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2005 Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. Franc, J. aut Turkevych, I. aut HöSchl, P. aut Belas, E. aut Moravec, P. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 34(2005), 6 vom: Juni, Seite 939-943 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:34 year:2005 number:6 month:06 pages:939-943 https://doi.org/10.1007/s11664-005-0046-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4319 AR 34 2005 6 06 939-943 |
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10.1007/s11664-005-0046-0 doi (DE-627)OLC2042297674 (DE-He213)s11664-005-0046-0-p DE-627 ger DE-627 rakwb eng 670 VZ Grill, R. verfasserin aut Semi-insulating CdTe with a minimized deep-level doping 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2005 Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. Franc, J. aut Turkevych, I. aut HöSchl, P. aut Belas, E. aut Moravec, P. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 34(2005), 6 vom: Juni, Seite 939-943 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:34 year:2005 number:6 month:06 pages:939-943 https://doi.org/10.1007/s11664-005-0046-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4319 AR 34 2005 6 06 939-943 |
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10.1007/s11664-005-0046-0 doi (DE-627)OLC2042297674 (DE-He213)s11664-005-0046-0-p DE-627 ger DE-627 rakwb eng 670 VZ Grill, R. verfasserin aut Semi-insulating CdTe with a minimized deep-level doping 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2005 Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. Franc, J. aut Turkevych, I. aut HöSchl, P. aut Belas, E. aut Moravec, P. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 34(2005), 6 vom: Juni, Seite 939-943 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:34 year:2005 number:6 month:06 pages:939-943 https://doi.org/10.1007/s11664-005-0046-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4319 AR 34 2005 6 06 939-943 |
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Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. © TMS-The Minerals, Metals and Materials Society 2005 |
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Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. © TMS-The Minerals, Metals and Materials Society 2005 |
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Abstract The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit $ 10^{13} $ $ cm^{−3} $ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification. © TMS-The Minerals, Metals and Materials Society 2005 |
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| doi_str |
10.1007/s11664-005-0046-0 |
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2024-07-03T14:36:26.904Z |
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