Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma
Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present...
Ausführliche Beschreibung
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| Autor*in: |
Golding, T. D. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2006 |
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| Anmerkung: |
© TMS-The Minerals, Metals and Materials Society 2006 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer-Verlag, 1972, 35(2006), 6 vom: Juni, Seite 1465-1469 |
|---|---|
| Übergeordnetes Werk: |
volume:35 ; year:2006 ; number:6 ; month:06 ; pages:1465-1469 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-006-0285-8 |
|---|
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OLC2042300837 |
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| 520 | |a Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. | ||
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| 700 | 1 | |a Wang, L. |4 aut | |
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| 700 | 1 | |a Carmody, M. |4 aut | |
| 700 | 1 | |a Sankur, H. O. |4 aut | |
| 700 | 1 | |a Edwall, D. |4 aut | |
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10.1007/s11664-006-0285-8 doi (DE-627)OLC2042300837 (DE-He213)s11664-006-0285-8-p DE-627 ger DE-627 rakwb eng 670 VZ Golding, T. D. verfasserin aut Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2006 Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. Hellmer, R. aut Bubulac, L. aut Dinan, J. H. aut Wang, L. aut Zhao, W. aut Carmody, M. aut Sankur, H. O. aut Edwall, D. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 35(2006), 6 vom: Juni, Seite 1465-1469 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:35 year:2006 number:6 month:06 pages:1465-1469 https://doi.org/10.1007/s11664-006-0285-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 35 2006 6 06 1465-1469 |
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10.1007/s11664-006-0285-8 doi (DE-627)OLC2042300837 (DE-He213)s11664-006-0285-8-p DE-627 ger DE-627 rakwb eng 670 VZ Golding, T. D. verfasserin aut Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2006 Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. Hellmer, R. aut Bubulac, L. aut Dinan, J. H. aut Wang, L. aut Zhao, W. aut Carmody, M. aut Sankur, H. O. aut Edwall, D. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 35(2006), 6 vom: Juni, Seite 1465-1469 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:35 year:2006 number:6 month:06 pages:1465-1469 https://doi.org/10.1007/s11664-006-0285-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 35 2006 6 06 1465-1469 |
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10.1007/s11664-006-0285-8 doi (DE-627)OLC2042300837 (DE-He213)s11664-006-0285-8-p DE-627 ger DE-627 rakwb eng 670 VZ Golding, T. D. verfasserin aut Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2006 Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. Hellmer, R. aut Bubulac, L. aut Dinan, J. H. aut Wang, L. aut Zhao, W. aut Carmody, M. aut Sankur, H. O. aut Edwall, D. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 35(2006), 6 vom: Juni, Seite 1465-1469 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:35 year:2006 number:6 month:06 pages:1465-1469 https://doi.org/10.1007/s11664-006-0285-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 35 2006 6 06 1465-1469 |
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10.1007/s11664-006-0285-8 doi (DE-627)OLC2042300837 (DE-He213)s11664-006-0285-8-p DE-627 ger DE-627 rakwb eng 670 VZ Golding, T. D. verfasserin aut Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2006 Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. Hellmer, R. aut Bubulac, L. aut Dinan, J. H. aut Wang, L. aut Zhao, W. aut Carmody, M. aut Sankur, H. O. aut Edwall, D. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 35(2006), 6 vom: Juni, Seite 1465-1469 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:35 year:2006 number:6 month:06 pages:1465-1469 https://doi.org/10.1007/s11664-006-0285-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 35 2006 6 06 1465-1469 |
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10.1007/s11664-006-0285-8 doi (DE-627)OLC2042300837 (DE-He213)s11664-006-0285-8-p DE-627 ger DE-627 rakwb eng 670 VZ Golding, T. D. verfasserin aut Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS-The Minerals, Metals and Materials Society 2006 Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. Hellmer, R. aut Bubulac, L. aut Dinan, J. H. aut Wang, L. aut Zhao, W. aut Carmody, M. aut Sankur, H. O. aut Edwall, D. aut Enthalten in Journal of electronic materials Springer-Verlag, 1972 35(2006), 6 vom: Juni, Seite 1465-1469 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:35 year:2006 number:6 month:06 pages:1465-1469 https://doi.org/10.1007/s11664-006-0285-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 35 2006 6 06 1465-1469 |
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Golding, T. D. Hellmer, R. Bubulac, L. Dinan, J. H. Wang, L. Zhao, W. Carmody, M. Sankur, H. O. Edwall, D. |
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Golding, T. D. |
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hydrogenation of hgcdte epilayers on si substrates using glow discharge plasma |
| title_auth |
Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma |
| abstract |
Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. © TMS-The Minerals, Metals and Materials Society 2006 |
| abstractGer |
Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. © TMS-The Minerals, Metals and Materials Society 2006 |
| abstract_unstemmed |
Abstract Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the $ 10^{14} $ $ cm^{−3} $ to $ 10^{18} $ $ cm^{−3} $ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples. © TMS-The Minerals, Metals and Materials Society 2006 |
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Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma |
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