Diffusion of Selenium in Liquid-Phase Epitaxy–Grown $ Hg_{0.78} $$ Cd_{0.22} $Te
We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (S...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhao, W. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 36(2007), 8 vom: 04. Apr., Seite 822-825 |
|---|---|
| Übergeordnetes Werk: |
volume:36 ; year:2007 ; number:8 ; day:04 ; month:04 ; pages:822-825 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-007-0096-6 |
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OLC2042303860 |
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| 520 | |a We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. | ||
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| 700 | 1 | |a Littler, C.L. |4 aut | |
| 700 | 1 | |a Dinan, J.H. |4 aut | |
| 700 | 1 | |a Dura, J.A. |4 aut | |
| 700 | 1 | |a Lindstrom, R.M. |4 aut | |
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10.1007/s11664-007-0096-6 doi (DE-627)OLC2042303860 (DE-He213)s11664-007-0096-6-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, W. verfasserin aut Diffusion of Selenium in Liquid-Phase Epitaxy–Grown $ Hg_{0.78} $$ Cd_{0.22} $Te 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. HgCdTe diffusion selenium infrared Golding, T.D. aut Littler, C.L. aut Dinan, J.H. aut Dura, J.A. aut Lindstrom, R.M. aut Enthalten in Journal of electronic materials Springer US, 1972 36(2007), 8 vom: 04. Apr., Seite 822-825 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:36 year:2007 number:8 day:04 month:04 pages:822-825 https://doi.org/10.1007/s11664-007-0096-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 36 2007 8 04 04 822-825 |
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10.1007/s11664-007-0096-6 doi (DE-627)OLC2042303860 (DE-He213)s11664-007-0096-6-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, W. verfasserin aut Diffusion of Selenium in Liquid-Phase Epitaxy–Grown $ Hg_{0.78} $$ Cd_{0.22} $Te 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. HgCdTe diffusion selenium infrared Golding, T.D. aut Littler, C.L. aut Dinan, J.H. aut Dura, J.A. aut Lindstrom, R.M. aut Enthalten in Journal of electronic materials Springer US, 1972 36(2007), 8 vom: 04. Apr., Seite 822-825 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:36 year:2007 number:8 day:04 month:04 pages:822-825 https://doi.org/10.1007/s11664-007-0096-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 36 2007 8 04 04 822-825 |
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10.1007/s11664-007-0096-6 doi (DE-627)OLC2042303860 (DE-He213)s11664-007-0096-6-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, W. verfasserin aut Diffusion of Selenium in Liquid-Phase Epitaxy–Grown $ Hg_{0.78} $$ Cd_{0.22} $Te 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. HgCdTe diffusion selenium infrared Golding, T.D. aut Littler, C.L. aut Dinan, J.H. aut Dura, J.A. aut Lindstrom, R.M. aut Enthalten in Journal of electronic materials Springer US, 1972 36(2007), 8 vom: 04. Apr., Seite 822-825 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:36 year:2007 number:8 day:04 month:04 pages:822-825 https://doi.org/10.1007/s11664-007-0096-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 36 2007 8 04 04 822-825 |
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10.1007/s11664-007-0096-6 doi (DE-627)OLC2042303860 (DE-He213)s11664-007-0096-6-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, W. verfasserin aut Diffusion of Selenium in Liquid-Phase Epitaxy–Grown $ Hg_{0.78} $$ Cd_{0.22} $Te 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. HgCdTe diffusion selenium infrared Golding, T.D. aut Littler, C.L. aut Dinan, J.H. aut Dura, J.A. aut Lindstrom, R.M. aut Enthalten in Journal of electronic materials Springer US, 1972 36(2007), 8 vom: 04. Apr., Seite 822-825 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:36 year:2007 number:8 day:04 month:04 pages:822-825 https://doi.org/10.1007/s11664-007-0096-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 36 2007 8 04 04 822-825 |
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10.1007/s11664-007-0096-6 doi (DE-627)OLC2042303860 (DE-He213)s11664-007-0096-6-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, W. verfasserin aut Diffusion of Selenium in Liquid-Phase Epitaxy–Grown $ Hg_{0.78} $$ Cd_{0.22} $Te 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. HgCdTe diffusion selenium infrared Golding, T.D. aut Littler, C.L. aut Dinan, J.H. aut Dura, J.A. aut Lindstrom, R.M. aut Enthalten in Journal of electronic materials Springer US, 1972 36(2007), 8 vom: 04. Apr., Seite 822-825 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:36 year:2007 number:8 day:04 month:04 pages:822-825 https://doi.org/10.1007/s11664-007-0096-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 36 2007 8 04 04 822-825 |
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Diffusion of Selenium in Liquid-Phase Epitaxy–Grown $ Hg_{0.78} $$ Cd_{0.22} $Te |
| abstract |
We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. © TMS 2007 |
| abstractGer |
We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. © TMS 2007 |
| abstract_unstemmed |
We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE $ Hg_{0.78} $$ Cd_{0.22} $Te samples were implanted with Se of 2.0 × $ 10^{14} $/$ cm^{2} $ at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient DSe is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The DSe was found to satisfy the Arrhenius relationship $$ D_{{Se}} = D_{0} e^{{ - E/K_{B} T}}$$. © TMS 2007 |
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| container_issue |
8 |
| title_short |
Diffusion of Selenium in Liquid-Phase Epitaxy–Grown $ Hg_{0.78} $$ Cd_{0.22} $Te |
| url |
https://doi.org/10.1007/s11664-007-0096-6 |
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| author2 |
Golding, T.D. Littler, C.L. Dinan, J.H. Dura, J.A. Lindstrom, R.M. |
| author2Str |
Golding, T.D. Littler, C.L. Dinan, J.H. Dura, J.A. Lindstrom, R.M. |
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| doi_str |
10.1007/s11664-007-0096-6 |
| up_date |
2024-07-03T14:38:07.557Z |
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7.401 |