Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N
Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unl...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Miller, M.A. [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 37(2007), 5 vom: 28. Sept., Seite 564-568 |
|---|---|
| Übergeordnetes Werk: |
volume:37 ; year:2007 ; number:5 ; day:28 ; month:09 ; pages:564-568 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-007-0300-8 |
|---|
| Katalog-ID: |
OLC204230607X |
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| 520 | |a Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. | ||
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10.1007/s11664-007-0300-8 doi (DE-627)OLC204230607X (DE-He213)s11664-007-0300-8-p DE-627 ger DE-627 rakwb eng 670 VZ Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN ohmic contact plasma etching vanadium Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2007 5 28 09 564-568 |
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10.1007/s11664-007-0300-8 doi (DE-627)OLC204230607X (DE-He213)s11664-007-0300-8-p DE-627 ger DE-627 rakwb eng 670 VZ Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN ohmic contact plasma etching vanadium Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2007 5 28 09 564-568 |
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10.1007/s11664-007-0300-8 doi (DE-627)OLC204230607X (DE-He213)s11664-007-0300-8-p DE-627 ger DE-627 rakwb eng 670 VZ Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN ohmic contact plasma etching vanadium Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2007 5 28 09 564-568 |
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10.1007/s11664-007-0300-8 doi (DE-627)OLC204230607X (DE-He213)s11664-007-0300-8-p DE-627 ger DE-627 rakwb eng 670 VZ Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN ohmic contact plasma etching vanadium Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2007 5 28 09 564-568 |
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10.1007/s11664-007-0300-8 doi (DE-627)OLC204230607X (DE-He213)s11664-007-0300-8-p DE-627 ger DE-627 rakwb eng 670 VZ Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN ohmic contact plasma etching vanadium Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2007 5 28 09 564-568 |
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|
| author |
Miller, M.A. |
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Miller, M.A. ddc 670 misc AlGaN misc ohmic contact misc plasma etching misc vanadium Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N |
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670 VZ Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N AlGaN ohmic contact plasma etching vanadium |
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Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N |
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Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N |
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Miller, M.A. |
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2007 |
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Miller, M.A. Koo, B.H. Bogart, K.H.A. Mohney, S.E. |
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Miller, M.A. |
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10.1007/s11664-007-0300-8 |
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670 |
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ti/al/ti/au and v/al/v/au contacts to plasma-etched n-$ al_{0.58} $$ ga_{0.42} $n |
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Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N |
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Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. © TMS 2007 |
| abstractGer |
Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. © TMS 2007 |
| abstract_unstemmed |
Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} $$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} $$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} $$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} $$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. © TMS 2007 |
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Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} $$ Ga_{0.42} $N |
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