Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy
Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jacobs, R.N. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2008 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2008 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 37(2008), 9 vom: 18. Juli, Seite 1480-1487 |
|---|---|
| Übergeordnetes Werk: |
volume:37 ; year:2008 ; number:9 ; day:18 ; month:07 ; pages:1480-1487 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-008-0519-z |
|---|
| Katalog-ID: |
OLC204230669X |
|---|
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| 520 | |a Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. | ||
| 650 | 4 | |a Residual film stress | |
| 650 | 4 | |a thermal mismatch | |
| 650 | 4 | |a HgCdTe | |
| 650 | 4 | |a CdTe buffer | |
| 650 | 4 | |a mismatched heteroepitaxy | |
| 650 | 4 | |a silicon | |
| 650 | 4 | |a germanium | |
| 650 | 4 | |a gallium arsenide | |
| 700 | 1 | |a Almeida, L.A. |4 aut | |
| 700 | 1 | |a Markunas, J. |4 aut | |
| 700 | 1 | |a Pellegrino, J. |4 aut | |
| 700 | 1 | |a Groenert, M. |4 aut | |
| 700 | 1 | |a Jaime-Vasquez, M. |4 aut | |
| 700 | 1 | |a Mahadik, N. |4 aut | |
| 700 | 1 | |a Andrews, C. |4 aut | |
| 700 | 1 | |a Qadri, S.B. |4 aut | |
| 700 | 1 | |a Lee, T. |4 aut | |
| 700 | 1 | |a Kim, M. |4 aut | |
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10.1007/s11664-008-0519-z doi (DE-627)OLC204230669X (DE-He213)s11664-008-0519-z-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R.N. verfasserin aut Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2008 Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. Residual film stress thermal mismatch HgCdTe CdTe buffer mismatched heteroepitaxy silicon germanium gallium arsenide Almeida, L.A. aut Markunas, J. aut Pellegrino, J. aut Groenert, M. aut Jaime-Vasquez, M. aut Mahadik, N. aut Andrews, C. aut Qadri, S.B. aut Lee, T. aut Kim, M. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2008), 9 vom: 18. Juli, Seite 1480-1487 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2008 number:9 day:18 month:07 pages:1480-1487 https://doi.org/10.1007/s11664-008-0519-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2008 9 18 07 1480-1487 |
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10.1007/s11664-008-0519-z doi (DE-627)OLC204230669X (DE-He213)s11664-008-0519-z-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R.N. verfasserin aut Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2008 Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. Residual film stress thermal mismatch HgCdTe CdTe buffer mismatched heteroepitaxy silicon germanium gallium arsenide Almeida, L.A. aut Markunas, J. aut Pellegrino, J. aut Groenert, M. aut Jaime-Vasquez, M. aut Mahadik, N. aut Andrews, C. aut Qadri, S.B. aut Lee, T. aut Kim, M. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2008), 9 vom: 18. Juli, Seite 1480-1487 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2008 number:9 day:18 month:07 pages:1480-1487 https://doi.org/10.1007/s11664-008-0519-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2008 9 18 07 1480-1487 |
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10.1007/s11664-008-0519-z doi (DE-627)OLC204230669X (DE-He213)s11664-008-0519-z-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R.N. verfasserin aut Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2008 Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. Residual film stress thermal mismatch HgCdTe CdTe buffer mismatched heteroepitaxy silicon germanium gallium arsenide Almeida, L.A. aut Markunas, J. aut Pellegrino, J. aut Groenert, M. aut Jaime-Vasquez, M. aut Mahadik, N. aut Andrews, C. aut Qadri, S.B. aut Lee, T. aut Kim, M. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2008), 9 vom: 18. Juli, Seite 1480-1487 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2008 number:9 day:18 month:07 pages:1480-1487 https://doi.org/10.1007/s11664-008-0519-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2008 9 18 07 1480-1487 |
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10.1007/s11664-008-0519-z doi (DE-627)OLC204230669X (DE-He213)s11664-008-0519-z-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R.N. verfasserin aut Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2008 Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. Residual film stress thermal mismatch HgCdTe CdTe buffer mismatched heteroepitaxy silicon germanium gallium arsenide Almeida, L.A. aut Markunas, J. aut Pellegrino, J. aut Groenert, M. aut Jaime-Vasquez, M. aut Mahadik, N. aut Andrews, C. aut Qadri, S.B. aut Lee, T. aut Kim, M. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2008), 9 vom: 18. Juli, Seite 1480-1487 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2008 number:9 day:18 month:07 pages:1480-1487 https://doi.org/10.1007/s11664-008-0519-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2008 9 18 07 1480-1487 |
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10.1007/s11664-008-0519-z doi (DE-627)OLC204230669X (DE-He213)s11664-008-0519-z-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R.N. verfasserin aut Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2008 Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. Residual film stress thermal mismatch HgCdTe CdTe buffer mismatched heteroepitaxy silicon germanium gallium arsenide Almeida, L.A. aut Markunas, J. aut Pellegrino, J. aut Groenert, M. aut Jaime-Vasquez, M. aut Mahadik, N. aut Andrews, C. aut Qadri, S.B. aut Lee, T. aut Kim, M. aut Enthalten in Journal of electronic materials Springer US, 1972 37(2008), 9 vom: 18. Juli, Seite 1480-1487 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:37 year:2008 number:9 day:18 month:07 pages:1480-1487 https://doi.org/10.1007/s11664-008-0519-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 37 2008 9 18 07 1480-1487 |
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670 VZ Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy Residual film stress thermal mismatch HgCdTe CdTe buffer mismatched heteroepitaxy silicon germanium gallium arsenide |
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Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy |
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Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy |
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Jacobs, R.N. |
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Jacobs, R.N. Almeida, L.A. Markunas, J. Pellegrino, J. Groenert, M. Jaime-Vasquez, M. Mahadik, N. Andrews, C. Qadri, S.B. Lee, T. Kim, M. |
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relevance of thermal mismatch in large-area composite substrates for hgcdte heteroepitaxy |
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Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy |
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Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. © TMS 2008 |
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Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. © TMS 2008 |
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Abstract It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics. © TMS 2008 |
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Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy |
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