Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe
Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low d...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gravrand, O. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2009 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2009 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 38(2009), 8 vom: 07. Mai, Seite 1733-1740 |
|---|---|
| Übergeordnetes Werk: |
volume:38 ; year:2009 ; number:8 ; day:07 ; month:05 ; pages:1733-1740 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-009-0795-2 |
|---|
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OLC2042309974 |
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| 520 | |a Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. | ||
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| 700 | 1 | |a Largeron, C. |4 aut | |
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| 700 | 1 | |a Chorier, Ph. |4 aut | |
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10.1007/s11664-009-0795-2 doi (DE-627)OLC2042309974 (DE-He213)s11664-009-0795-2-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2009 Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. FPA HgCdTe VLWIR ion implantation Mollard, L. aut Largeron, C. aut Baier, N. aut Deborniol, E. aut Chorier, Ph. aut Enthalten in Journal of electronic materials Springer US, 1972 38(2009), 8 vom: 07. Mai, Seite 1733-1740 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:38 year:2009 number:8 day:07 month:05 pages:1733-1740 https://doi.org/10.1007/s11664-009-0795-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 38 2009 8 07 05 1733-1740 |
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10.1007/s11664-009-0795-2 doi (DE-627)OLC2042309974 (DE-He213)s11664-009-0795-2-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2009 Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. FPA HgCdTe VLWIR ion implantation Mollard, L. aut Largeron, C. aut Baier, N. aut Deborniol, E. aut Chorier, Ph. aut Enthalten in Journal of electronic materials Springer US, 1972 38(2009), 8 vom: 07. Mai, Seite 1733-1740 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:38 year:2009 number:8 day:07 month:05 pages:1733-1740 https://doi.org/10.1007/s11664-009-0795-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 38 2009 8 07 05 1733-1740 |
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10.1007/s11664-009-0795-2 doi (DE-627)OLC2042309974 (DE-He213)s11664-009-0795-2-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2009 Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. FPA HgCdTe VLWIR ion implantation Mollard, L. aut Largeron, C. aut Baier, N. aut Deborniol, E. aut Chorier, Ph. aut Enthalten in Journal of electronic materials Springer US, 1972 38(2009), 8 vom: 07. Mai, Seite 1733-1740 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:38 year:2009 number:8 day:07 month:05 pages:1733-1740 https://doi.org/10.1007/s11664-009-0795-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 38 2009 8 07 05 1733-1740 |
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10.1007/s11664-009-0795-2 doi (DE-627)OLC2042309974 (DE-He213)s11664-009-0795-2-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2009 Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. FPA HgCdTe VLWIR ion implantation Mollard, L. aut Largeron, C. aut Baier, N. aut Deborniol, E. aut Chorier, Ph. aut Enthalten in Journal of electronic materials Springer US, 1972 38(2009), 8 vom: 07. Mai, Seite 1733-1740 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:38 year:2009 number:8 day:07 month:05 pages:1733-1740 https://doi.org/10.1007/s11664-009-0795-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 38 2009 8 07 05 1733-1740 |
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10.1007/s11664-009-0795-2 doi (DE-627)OLC2042309974 (DE-He213)s11664-009-0795-2-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2009 Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. FPA HgCdTe VLWIR ion implantation Mollard, L. aut Largeron, C. aut Baier, N. aut Deborniol, E. aut Chorier, Ph. aut Enthalten in Journal of electronic materials Springer US, 1972 38(2009), 8 vom: 07. Mai, Seite 1733-1740 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:38 year:2009 number:8 day:07 month:05 pages:1733-1740 https://doi.org/10.1007/s11664-009-0795-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2020 GBV_ILN_2021 AR 38 2009 8 07 05 1733-1740 |
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marc |
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2009 |
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txt |
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1733 |
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Gravrand, O. Mollard, L. Largeron, C. Baier, N. Deborniol, E. Chorier, Ph. |
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38 |
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670 VZ |
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Aufsätze |
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Gravrand, O. |
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10.1007/s11664-009-0795-2 |
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670 |
| title_sort |
study of lwir and vlwir focal plane array developments: comparison between p-on-n and different n-on-p technologies on lpe hgcdte |
| title_auth |
Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe |
| abstract |
Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. © TMS 2009 |
| abstractGer |
Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. © TMS 2009 |
| abstract_unstemmed |
Abstract The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 μm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K. © TMS 2009 |
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8 |
| title_short |
Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe |
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https://doi.org/10.1007/s11664-009-0795-2 |
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Mollard, L. Largeron, C. Baier, N. Deborniol, E. Chorier, Ph |
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2024-07-03T14:39:42.369Z |
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