In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring
A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Biethan, J.-P. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 40(2011), 4 vom: 29. Jan., Seite 453-458 |
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| Übergeordnetes Werk: |
volume:40 ; year:2011 ; number:4 ; day:29 ; month:01 ; pages:453-458 |
| Links: |
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| DOI / URN: |
10.1007/s11664-011-1515-2 |
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OLC2042315915 |
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| 520 | |a A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. | ||
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10.1007/s11664-011-1515-2 doi (DE-627)OLC2042315915 (DE-He213)s11664-011-1515-2-p DE-627 ger DE-627 rakwb eng 670 VZ Biethan, J.-P. verfasserin aut In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. ZnO MOCVD interferometry nucleation layer optimization nanostructures Considine, L. aut Pavlidis, D. aut Enthalten in Journal of electronic materials Springer US, 1972 40(2011), 4 vom: 29. Jan., Seite 453-458 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:40 year:2011 number:4 day:29 month:01 pages:453-458 https://doi.org/10.1007/s11664-011-1515-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 40 2011 4 29 01 453-458 |
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10.1007/s11664-011-1515-2 doi (DE-627)OLC2042315915 (DE-He213)s11664-011-1515-2-p DE-627 ger DE-627 rakwb eng 670 VZ Biethan, J.-P. verfasserin aut In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. ZnO MOCVD interferometry nucleation layer optimization nanostructures Considine, L. aut Pavlidis, D. aut Enthalten in Journal of electronic materials Springer US, 1972 40(2011), 4 vom: 29. Jan., Seite 453-458 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:40 year:2011 number:4 day:29 month:01 pages:453-458 https://doi.org/10.1007/s11664-011-1515-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 40 2011 4 29 01 453-458 |
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10.1007/s11664-011-1515-2 doi (DE-627)OLC2042315915 (DE-He213)s11664-011-1515-2-p DE-627 ger DE-627 rakwb eng 670 VZ Biethan, J.-P. verfasserin aut In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. ZnO MOCVD interferometry nucleation layer optimization nanostructures Considine, L. aut Pavlidis, D. aut Enthalten in Journal of electronic materials Springer US, 1972 40(2011), 4 vom: 29. Jan., Seite 453-458 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:40 year:2011 number:4 day:29 month:01 pages:453-458 https://doi.org/10.1007/s11664-011-1515-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 40 2011 4 29 01 453-458 |
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In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring |
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A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. © TMS 2011 |
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A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. © TMS 2011 |
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A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. © TMS 2011 |
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