Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si
Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Farrell, S. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 40(2011), 8 vom: 14. Juni, Seite 1727-1732 |
|---|---|
| Übergeordnetes Werk: |
volume:40 ; year:2011 ; number:8 ; day:14 ; month:06 ; pages:1727-1732 |
| Links: |
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| DOI / URN: |
10.1007/s11664-011-1669-y |
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OLC2042318000 |
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| 520 | |a Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. | ||
| 650 | 4 | |a HgCdTe | |
| 650 | 4 | |a thermal cycle annealing | |
| 650 | 4 | |a dislocation | |
| 650 | 4 | |a etch pit density | |
| 650 | 4 | |a mercury | |
| 650 | 4 | |a cadmium telluride | |
| 650 | 4 | |a Si | |
| 650 | 4 | |a composite substrates | |
| 700 | 1 | |a Rao, Mulpuri V. |4 aut | |
| 700 | 1 | |a Brill, G. |4 aut | |
| 700 | 1 | |a Chen, Y. |4 aut | |
| 700 | 1 | |a Wijewarnasuriya, P. |4 aut | |
| 700 | 1 | |a Dhar, N. |4 aut | |
| 700 | 1 | |a Benson, D. |4 aut | |
| 700 | 1 | |a Harris, K. |4 aut | |
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10.1007/s11664-011-1669-y doi (DE-627)OLC2042318000 (DE-He213)s11664-011-1669-y-p DE-627 ger DE-627 rakwb eng 670 VZ Farrell, S. verfasserin aut Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. HgCdTe thermal cycle annealing dislocation etch pit density mercury cadmium telluride Si composite substrates Rao, Mulpuri V. aut Brill, G. aut Chen, Y. aut Wijewarnasuriya, P. aut Dhar, N. aut Benson, D. aut Harris, K. aut Enthalten in Journal of electronic materials Springer US, 1972 40(2011), 8 vom: 14. Juni, Seite 1727-1732 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:40 year:2011 number:8 day:14 month:06 pages:1727-1732 https://doi.org/10.1007/s11664-011-1669-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 40 2011 8 14 06 1727-1732 |
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10.1007/s11664-011-1669-y doi (DE-627)OLC2042318000 (DE-He213)s11664-011-1669-y-p DE-627 ger DE-627 rakwb eng 670 VZ Farrell, S. verfasserin aut Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. HgCdTe thermal cycle annealing dislocation etch pit density mercury cadmium telluride Si composite substrates Rao, Mulpuri V. aut Brill, G. aut Chen, Y. aut Wijewarnasuriya, P. aut Dhar, N. aut Benson, D. aut Harris, K. aut Enthalten in Journal of electronic materials Springer US, 1972 40(2011), 8 vom: 14. Juni, Seite 1727-1732 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:40 year:2011 number:8 day:14 month:06 pages:1727-1732 https://doi.org/10.1007/s11664-011-1669-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 40 2011 8 14 06 1727-1732 |
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10.1007/s11664-011-1669-y doi (DE-627)OLC2042318000 (DE-He213)s11664-011-1669-y-p DE-627 ger DE-627 rakwb eng 670 VZ Farrell, S. verfasserin aut Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. HgCdTe thermal cycle annealing dislocation etch pit density mercury cadmium telluride Si composite substrates Rao, Mulpuri V. aut Brill, G. aut Chen, Y. aut Wijewarnasuriya, P. aut Dhar, N. aut Benson, D. aut Harris, K. aut Enthalten in Journal of electronic materials Springer US, 1972 40(2011), 8 vom: 14. Juni, Seite 1727-1732 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:40 year:2011 number:8 day:14 month:06 pages:1727-1732 https://doi.org/10.1007/s11664-011-1669-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 40 2011 8 14 06 1727-1732 |
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10.1007/s11664-011-1669-y doi (DE-627)OLC2042318000 (DE-He213)s11664-011-1669-y-p DE-627 ger DE-627 rakwb eng 670 VZ Farrell, S. verfasserin aut Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. HgCdTe thermal cycle annealing dislocation etch pit density mercury cadmium telluride Si composite substrates Rao, Mulpuri V. aut Brill, G. aut Chen, Y. aut Wijewarnasuriya, P. aut Dhar, N. aut Benson, D. aut Harris, K. aut Enthalten in Journal of electronic materials Springer US, 1972 40(2011), 8 vom: 14. Juni, Seite 1727-1732 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:40 year:2011 number:8 day:14 month:06 pages:1727-1732 https://doi.org/10.1007/s11664-011-1669-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 40 2011 8 14 06 1727-1732 |
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10.1007/s11664-011-1669-y doi (DE-627)OLC2042318000 (DE-He213)s11664-011-1669-y-p DE-627 ger DE-627 rakwb eng 670 VZ Farrell, S. verfasserin aut Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. HgCdTe thermal cycle annealing dislocation etch pit density mercury cadmium telluride Si composite substrates Rao, Mulpuri V. aut Brill, G. aut Chen, Y. aut Wijewarnasuriya, P. aut Dhar, N. aut Benson, D. aut Harris, K. aut Enthalten in Journal of electronic materials Springer US, 1972 40(2011), 8 vom: 14. Juni, Seite 1727-1732 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:40 year:2011 number:8 day:14 month:06 pages:1727-1732 https://doi.org/10.1007/s11664-011-1669-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 40 2011 8 14 06 1727-1732 |
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effect of cycle annealing parameters on dislocation density reduction for hgcdte on si |
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Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si |
| abstract |
Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. © TMS 2011 |
| abstractGer |
Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. © TMS 2011 |
| abstract_unstemmed |
Abstract In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × $ 10^{6} $ $ cm^{−2} $. In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer. © TMS 2011 |
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Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si |
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