Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System
Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in...
Ausführliche Beschreibung
Autor*in: |
Hashiba, M. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2011 |
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Schlagwörter: |
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Anmerkung: |
© TMS 2011 |
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Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 41(2011), 1 vom: 02. Sept., Seite 32-43 |
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Übergeordnetes Werk: |
volume:41 ; year:2011 ; number:1 ; day:02 ; month:09 ; pages:32-43 |
Links: |
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DOI / URN: |
10.1007/s11664-011-1733-7 |
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Katalog-ID: |
OLC2042318515 |
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520 | |a Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. | ||
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10.1007/s11664-011-1733-7 doi (DE-627)OLC2042318515 (DE-He213)s11664-011-1733-7-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 1 vom: 02. Sept., Seite 32-43 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:1 day:02 month:09 pages:32-43 https://doi.org/10.1007/s11664-011-1733-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 1 02 09 32-43 |
spelling |
10.1007/s11664-011-1733-7 doi (DE-627)OLC2042318515 (DE-He213)s11664-011-1733-7-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 1 vom: 02. Sept., Seite 32-43 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:1 day:02 month:09 pages:32-43 https://doi.org/10.1007/s11664-011-1733-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 1 02 09 32-43 |
allfields_unstemmed |
10.1007/s11664-011-1733-7 doi (DE-627)OLC2042318515 (DE-He213)s11664-011-1733-7-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 1 vom: 02. Sept., Seite 32-43 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:1 day:02 month:09 pages:32-43 https://doi.org/10.1007/s11664-011-1733-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 1 02 09 32-43 |
allfieldsGer |
10.1007/s11664-011-1733-7 doi (DE-627)OLC2042318515 (DE-He213)s11664-011-1733-7-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 1 vom: 02. Sept., Seite 32-43 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:1 day:02 month:09 pages:32-43 https://doi.org/10.1007/s11664-011-1733-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 1 02 09 32-43 |
allfieldsSound |
10.1007/s11664-011-1733-7 doi (DE-627)OLC2042318515 (DE-He213)s11664-011-1733-7-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 1 vom: 02. Sept., Seite 32-43 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:1 day:02 month:09 pages:32-43 https://doi.org/10.1007/s11664-011-1733-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 1 02 09 32-43 |
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author |
Hashiba, M. |
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Hashiba, M. ddc 670 misc Metallization misc solder misc conductor misc intermetallic compounds Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System |
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670 VZ Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System Metallization solder conductor intermetallic compounds |
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ddc 670 misc Metallization misc solder misc conductor misc intermetallic compounds |
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ddc 670 misc Metallization misc solder misc conductor misc intermetallic compounds |
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Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System |
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Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System |
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Hashiba, M. |
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2011 |
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Hashiba, M. Shinmei, W. Kajihara, M. |
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kinetics of solid-state reactive diffusion in the (pd-ni)/sn system |
title_auth |
Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System |
abstract |
Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. © TMS 2011 |
abstractGer |
Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. © TMS 2011 |
abstract_unstemmed |
Abstract The growth of compounds during energization heating at the interconnection between a Sn-based solder and a multilayer Pd/Ni/Cu conductor may be inhibited by the alloying of Pd with Ni. To examine such influence of Ni on the compound growth, the kinetics of solid-state reactive diffusion in the (Pd-Ni)/Sn system was experimentally determined in the present study. Experiments were conducted using Sn/(Pd-Ni)/Sn diffusion couples with Ni mol fractions of y = 0.257, 0.505, and 0.746 which were prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 433 K to 473 K for various times up to 771 h. During annealing, different compounds are formed as rather uniform layers at the interface in the diffusion couple. In all the annealed diffusion couples, (Pd,Ni)$ Sn_{4} $ was observed clearly. Furthermore, (Pd,Ni)$ Sn_{3} $ and (Pd,Ni)$ Sn_{2} $ were recognized for y = 0.257, and $ Ni_{3} $$ Sn_{4} $ was discerned for y = 0.746. However, no other compounds except (Pd,Ni)$ Sn_{4} $ were detected for y = 0.505. The total thickness of the compound layers is proportional to a power function of the annealing time. The exponent of the power function is rather close to 0.5 for y = 0.257 and 0.505 but smaller than 0.5 for y = 0.746. Thus, volume diffusion is the rate-controlling process of the compound growth for y = 0.257 and 0.505, but boundary diffusion contributes to the rate-controlling process for y = 0.746. At the experimental annealing times, the overall growth rate of the compound layers is insensitive to y at y < 0.5 but decreases monotonically with increasing value of y at y > 0.5. Consequently, the compound growth is actually decelerated by the addition of Ni into Pd with y > 0.5 in the multilayer Pd/Ni/Cu conductor. © TMS 2011 |
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Kinetics of Solid-State Reactive Diffusion in the (Pd-Ni)/Sn System |
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