High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C
Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heat...
Ausführliche Beschreibung
Autor*in: |
Nipoti, R. [verfasserIn] |
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Artikel |
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Sprache: |
Englisch |
Erschienen: |
2011 |
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Anmerkung: |
© TMS 2011 |
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Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 41(2011), 3 vom: 05. Nov., Seite 457-465 |
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Übergeordnetes Werk: |
volume:41 ; year:2011 ; number:3 ; day:05 ; month:11 ; pages:457-465 |
Links: |
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DOI / URN: |
10.1007/s11664-011-1794-7 |
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Katalog-ID: |
OLC2042319023 |
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520 | |a Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. | ||
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10.1007/s11664-011-1794-7 doi (DE-627)OLC2042319023 (DE-He213)s11664-011-1794-7-p DE-627 ger DE-627 rakwb eng 670 VZ Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide ion implantation doping post-implantation annealing electrical characterization Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 3 05 11 457-465 |
spelling |
10.1007/s11664-011-1794-7 doi (DE-627)OLC2042319023 (DE-He213)s11664-011-1794-7-p DE-627 ger DE-627 rakwb eng 670 VZ Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide ion implantation doping post-implantation annealing electrical characterization Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 3 05 11 457-465 |
allfields_unstemmed |
10.1007/s11664-011-1794-7 doi (DE-627)OLC2042319023 (DE-He213)s11664-011-1794-7-p DE-627 ger DE-627 rakwb eng 670 VZ Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide ion implantation doping post-implantation annealing electrical characterization Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 3 05 11 457-465 |
allfieldsGer |
10.1007/s11664-011-1794-7 doi (DE-627)OLC2042319023 (DE-He213)s11664-011-1794-7-p DE-627 ger DE-627 rakwb eng 670 VZ Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide ion implantation doping post-implantation annealing electrical characterization Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 3 05 11 457-465 |
allfieldsSound |
10.1007/s11664-011-1794-7 doi (DE-627)OLC2042319023 (DE-He213)s11664-011-1794-7-p DE-627 ger DE-627 rakwb eng 670 VZ Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide ion implantation doping post-implantation annealing electrical characterization Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 AR 41 2011 3 05 11 457-465 |
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Nipoti, R. ddc 670 misc Silicon carbide misc ion implantation misc doping misc post-implantation annealing misc electrical characterization High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C |
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670 VZ High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C Silicon carbide ion implantation doping post-implantation annealing electrical characterization |
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High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C |
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High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C |
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high-dose phosphorus-implanted 4h-sic: microwave and conventional post-implantation annealing at temperatures ≥1700°c |
title_auth |
High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C |
abstract |
Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. © TMS 2011 |
abstractGer |
Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. © TMS 2011 |
abstract_unstemmed |
Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. © TMS 2011 |
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title_short |
High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C |
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