Thermoelectric Performance of Sb- and La-Doped $ Mg_{2} $$ Si_{0.5} $$ Ge_{0.5} $
Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, o...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhou, Xiaoyuan [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 41(2012), 6 vom: 09. März, Seite 1589-1594 |
|---|---|
| Übergeordnetes Werk: |
volume:41 ; year:2012 ; number:6 ; day:09 ; month:03 ; pages:1589-1594 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-012-2018-5 |
|---|
| Katalog-ID: |
OLC2042320056 |
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| 520 | |a Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. | ||
| 650 | 4 | |a Doped Mg | |
| 650 | 4 | |a Si | |
| 650 | 4 | |a thermoelectric properties | |
| 650 | 4 | |a figure of merit | |
| 650 | 4 | |a phonon scattering | |
| 700 | 1 | |a Wang, Guoyu |4 aut | |
| 700 | 1 | |a Chi, Hang |4 aut | |
| 700 | 1 | |a Su, Xianli |4 aut | |
| 700 | 1 | |a Salvador, James R. |4 aut | |
| 700 | 1 | |a Liu, Wei |4 aut | |
| 700 | 1 | |a Tang, Xinfeng |4 aut | |
| 700 | 1 | |a Uher, Ctirad |4 aut | |
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10.1007/s11664-012-2018-5 doi (DE-627)OLC2042320056 (DE-He213)s11664-012-2018-5-p DE-627 ger DE-627 rakwb eng 670 VZ Zhou, Xiaoyuan verfasserin aut Thermoelectric Performance of Sb- and La-Doped $ Mg_{2} $$ Si_{0.5} $$ Ge_{0.5} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. Doped Mg Si thermoelectric properties figure of merit phonon scattering Wang, Guoyu aut Chi, Hang aut Su, Xianli aut Salvador, James R. aut Liu, Wei aut Tang, Xinfeng aut Uher, Ctirad aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 6 vom: 09. März, Seite 1589-1594 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:6 day:09 month:03 pages:1589-1594 https://doi.org/10.1007/s11664-012-2018-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 6 09 03 1589-1594 |
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10.1007/s11664-012-2018-5 doi (DE-627)OLC2042320056 (DE-He213)s11664-012-2018-5-p DE-627 ger DE-627 rakwb eng 670 VZ Zhou, Xiaoyuan verfasserin aut Thermoelectric Performance of Sb- and La-Doped $ Mg_{2} $$ Si_{0.5} $$ Ge_{0.5} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. Doped Mg Si thermoelectric properties figure of merit phonon scattering Wang, Guoyu aut Chi, Hang aut Su, Xianli aut Salvador, James R. aut Liu, Wei aut Tang, Xinfeng aut Uher, Ctirad aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 6 vom: 09. März, Seite 1589-1594 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:6 day:09 month:03 pages:1589-1594 https://doi.org/10.1007/s11664-012-2018-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 6 09 03 1589-1594 |
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10.1007/s11664-012-2018-5 doi (DE-627)OLC2042320056 (DE-He213)s11664-012-2018-5-p DE-627 ger DE-627 rakwb eng 670 VZ Zhou, Xiaoyuan verfasserin aut Thermoelectric Performance of Sb- and La-Doped $ Mg_{2} $$ Si_{0.5} $$ Ge_{0.5} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. Doped Mg Si thermoelectric properties figure of merit phonon scattering Wang, Guoyu aut Chi, Hang aut Su, Xianli aut Salvador, James R. aut Liu, Wei aut Tang, Xinfeng aut Uher, Ctirad aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 6 vom: 09. März, Seite 1589-1594 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:6 day:09 month:03 pages:1589-1594 https://doi.org/10.1007/s11664-012-2018-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 6 09 03 1589-1594 |
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10.1007/s11664-012-2018-5 doi (DE-627)OLC2042320056 (DE-He213)s11664-012-2018-5-p DE-627 ger DE-627 rakwb eng 670 VZ Zhou, Xiaoyuan verfasserin aut Thermoelectric Performance of Sb- and La-Doped $ Mg_{2} $$ Si_{0.5} $$ Ge_{0.5} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. Doped Mg Si thermoelectric properties figure of merit phonon scattering Wang, Guoyu aut Chi, Hang aut Su, Xianli aut Salvador, James R. aut Liu, Wei aut Tang, Xinfeng aut Uher, Ctirad aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 6 vom: 09. März, Seite 1589-1594 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:6 day:09 month:03 pages:1589-1594 https://doi.org/10.1007/s11664-012-2018-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 6 09 03 1589-1594 |
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10.1007/s11664-012-2018-5 doi (DE-627)OLC2042320056 (DE-He213)s11664-012-2018-5-p DE-627 ger DE-627 rakwb eng 670 VZ Zhou, Xiaoyuan verfasserin aut Thermoelectric Performance of Sb- and La-Doped $ Mg_{2} $$ Si_{0.5} $$ Ge_{0.5} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. Doped Mg Si thermoelectric properties figure of merit phonon scattering Wang, Guoyu aut Chi, Hang aut Su, Xianli aut Salvador, James R. aut Liu, Wei aut Tang, Xinfeng aut Uher, Ctirad aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 6 vom: 09. März, Seite 1589-1594 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:6 day:09 month:03 pages:1589-1594 https://doi.org/10.1007/s11664-012-2018-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 6 09 03 1589-1594 |
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Zhou, Xiaoyuan |
| doi_str_mv |
10.1007/s11664-012-2018-5 |
| dewey-full |
670 |
| title_sort |
thermoelectric performance of sb- and la-doped $ mg_{2} $$ si_{0.5} $$ ge_{0.5} $ |
| title_auth |
Thermoelectric Performance of Sb- and La-Doped $ Mg_{2} $$ Si_{0.5} $$ Ge_{0.5} $ |
| abstract |
Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. © TMS 2012 |
| abstractGer |
Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. © TMS 2012 |
| abstract_unstemmed |
Abstract $ La_{x} $$ Mg_{2−x} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $ compounds (x = 0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300 K to 823 K. The figure of merit of this n-type compound has been raised above unity at 823 K for the sample with x = 0.01, a value 60% higher than that of $ Mg_{2} $$ Si_{0.49} $$ Ge_{0.5} $$ Sb_{0.01} $. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of $ Mg_{2} $$ Si_{1−x} $$ Ge_{x} $ solid solutions. © TMS 2012 |
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GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 |
| container_issue |
6 |
| title_short |
Thermoelectric Performance of Sb- and La-Doped $ Mg_{2} $$ Si_{0.5} $$ Ge_{0.5} $ |
| url |
https://doi.org/10.1007/s11664-012-2018-5 |
| remote_bool |
false |
| author2 |
Wang, Guoyu Chi, Hang Su, Xianli Salvador, James R. Liu, Wei Tang, Xinfeng Uher, Ctirad |
| author2Str |
Wang, Guoyu Chi, Hang Su, Xianli Salvador, James R. Liu, Wei Tang, Xinfeng Uher, Ctirad |
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| doi_str |
10.1007/s11664-012-2018-5 |
| up_date |
2024-07-03T14:42:28.288Z |
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