Preparation and Transport Properties of $ Bi_{2} $$ O_{2} $Se Single Crystals
Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Drasar, C. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 41(2012), 9 vom: 03. Juni, Seite 2317-2321 |
|---|---|
| Übergeordnetes Werk: |
volume:41 ; year:2012 ; number:9 ; day:03 ; month:06 ; pages:2317-2321 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-012-2143-1 |
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OLC2042322067 |
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| 520 | |a Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. | ||
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10.1007/s11664-012-2143-1 doi (DE-627)OLC2042322067 (DE-He213)s11664-012-2143-1-p DE-627 ger DE-627 rakwb eng 670 VZ Drasar, C. verfasserin aut Preparation and Transport Properties of $ Bi_{2} $$ O_{2} $Se Single Crystals 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. Semiconductors crystal growth electrical transport Ruleova, P. aut Benes, L. aut Lostak, P. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 9 vom: 03. Juni, Seite 2317-2321 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:9 day:03 month:06 pages:2317-2321 https://doi.org/10.1007/s11664-012-2143-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 9 03 06 2317-2321 |
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10.1007/s11664-012-2143-1 doi (DE-627)OLC2042322067 (DE-He213)s11664-012-2143-1-p DE-627 ger DE-627 rakwb eng 670 VZ Drasar, C. verfasserin aut Preparation and Transport Properties of $ Bi_{2} $$ O_{2} $Se Single Crystals 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. Semiconductors crystal growth electrical transport Ruleova, P. aut Benes, L. aut Lostak, P. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 9 vom: 03. Juni, Seite 2317-2321 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:9 day:03 month:06 pages:2317-2321 https://doi.org/10.1007/s11664-012-2143-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 9 03 06 2317-2321 |
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10.1007/s11664-012-2143-1 doi (DE-627)OLC2042322067 (DE-He213)s11664-012-2143-1-p DE-627 ger DE-627 rakwb eng 670 VZ Drasar, C. verfasserin aut Preparation and Transport Properties of $ Bi_{2} $$ O_{2} $Se Single Crystals 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. Semiconductors crystal growth electrical transport Ruleova, P. aut Benes, L. aut Lostak, P. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 9 vom: 03. Juni, Seite 2317-2321 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:9 day:03 month:06 pages:2317-2321 https://doi.org/10.1007/s11664-012-2143-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 9 03 06 2317-2321 |
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10.1007/s11664-012-2143-1 doi (DE-627)OLC2042322067 (DE-He213)s11664-012-2143-1-p DE-627 ger DE-627 rakwb eng 670 VZ Drasar, C. verfasserin aut Preparation and Transport Properties of $ Bi_{2} $$ O_{2} $Se Single Crystals 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. Semiconductors crystal growth electrical transport Ruleova, P. aut Benes, L. aut Lostak, P. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 9 vom: 03. Juni, Seite 2317-2321 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:9 day:03 month:06 pages:2317-2321 https://doi.org/10.1007/s11664-012-2143-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 9 03 06 2317-2321 |
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Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. © TMS 2012 |
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Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. © TMS 2012 |
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Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. © TMS 2012 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042322067</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230401125432.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2012 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11664-012-2143-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042322067</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11664-012-2143-1-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Drasar, C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Preparation and Transport Properties of $ Bi_{2} $$ O_{2} $Se Single Crystals</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© TMS 2012</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract $ Bi_{2} $$ O_{2} $Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be mef ≈ 0.29. 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