Reduction of Dislocation Density by Producing Novel Structures
Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small an...
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| Autor*in: |
Stoltz, A. J. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS (outside the USA) 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 41(2012), 10 vom: 06. Juni, Seite 2949-2956 |
|---|---|
| Übergeordnetes Werk: |
volume:41 ; year:2012 ; number:10 ; day:06 ; month:06 ; pages:2949-2956 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-012-2106-6 |
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| Katalog-ID: |
OLC2042322148 |
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| 245 | 1 | 0 | |a Reduction of Dislocation Density by Producing Novel Structures |
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| 520 | |a Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. | ||
| 650 | 4 | |a HgCdTe | |
| 650 | 4 | |a defects | |
| 650 | 4 | |a EPD | |
| 650 | 4 | |a etch pit density | |
| 650 | 4 | |a dislocations | |
| 650 | 4 | |a gettering | |
| 650 | 4 | |a alternate substrate | |
| 650 | 4 | |a ICP | |
| 650 | 4 | |a plasma processing | |
| 700 | 1 | |a Benson, J. D. |4 aut | |
| 700 | 1 | |a Jacobs, R. |4 aut | |
| 700 | 1 | |a Smith, P. |4 aut | |
| 700 | 1 | |a Almeida, L. A. |4 aut | |
| 700 | 1 | |a Carmody, M. |4 aut | |
| 700 | 1 | |a Farrell, S. |4 aut | |
| 700 | 1 | |a Wijewarnasuriya, P. S. |4 aut | |
| 700 | 1 | |a Brill, G. |4 aut | |
| 700 | 1 | |a Chen, Y. |4 aut | |
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10.1007/s11664-012-2106-6 doi (DE-627)OLC2042322148 (DE-He213)s11664-012-2106-6-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut Reduction of Dislocation Density by Producing Novel Structures 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2012 Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. HgCdTe defects EPD etch pit density dislocations gettering alternate substrate ICP plasma processing Benson, J. D. aut Jacobs, R. aut Smith, P. aut Almeida, L. A. aut Carmody, M. aut Farrell, S. aut Wijewarnasuriya, P. S. aut Brill, G. aut Chen, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 06. Juni, Seite 2949-2956 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:06 month:06 pages:2949-2956 https://doi.org/10.1007/s11664-012-2106-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 06 06 2949-2956 |
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10.1007/s11664-012-2106-6 doi (DE-627)OLC2042322148 (DE-He213)s11664-012-2106-6-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut Reduction of Dislocation Density by Producing Novel Structures 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2012 Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. HgCdTe defects EPD etch pit density dislocations gettering alternate substrate ICP plasma processing Benson, J. D. aut Jacobs, R. aut Smith, P. aut Almeida, L. A. aut Carmody, M. aut Farrell, S. aut Wijewarnasuriya, P. S. aut Brill, G. aut Chen, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 06. Juni, Seite 2949-2956 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:06 month:06 pages:2949-2956 https://doi.org/10.1007/s11664-012-2106-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 06 06 2949-2956 |
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10.1007/s11664-012-2106-6 doi (DE-627)OLC2042322148 (DE-He213)s11664-012-2106-6-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut Reduction of Dislocation Density by Producing Novel Structures 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2012 Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. HgCdTe defects EPD etch pit density dislocations gettering alternate substrate ICP plasma processing Benson, J. D. aut Jacobs, R. aut Smith, P. aut Almeida, L. A. aut Carmody, M. aut Farrell, S. aut Wijewarnasuriya, P. S. aut Brill, G. aut Chen, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 06. Juni, Seite 2949-2956 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:06 month:06 pages:2949-2956 https://doi.org/10.1007/s11664-012-2106-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 06 06 2949-2956 |
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10.1007/s11664-012-2106-6 doi (DE-627)OLC2042322148 (DE-He213)s11664-012-2106-6-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut Reduction of Dislocation Density by Producing Novel Structures 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2012 Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. HgCdTe defects EPD etch pit density dislocations gettering alternate substrate ICP plasma processing Benson, J. D. aut Jacobs, R. aut Smith, P. aut Almeida, L. A. aut Carmody, M. aut Farrell, S. aut Wijewarnasuriya, P. S. aut Brill, G. aut Chen, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 06. Juni, Seite 2949-2956 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:06 month:06 pages:2949-2956 https://doi.org/10.1007/s11664-012-2106-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 06 06 2949-2956 |
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10.1007/s11664-012-2106-6 doi (DE-627)OLC2042322148 (DE-He213)s11664-012-2106-6-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut Reduction of Dislocation Density by Producing Novel Structures 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2012 Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. HgCdTe defects EPD etch pit density dislocations gettering alternate substrate ICP plasma processing Benson, J. D. aut Jacobs, R. aut Smith, P. aut Almeida, L. A. aut Carmody, M. aut Farrell, S. aut Wijewarnasuriya, P. S. aut Brill, G. aut Chen, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 06. Juni, Seite 2949-2956 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:06 month:06 pages:2949-2956 https://doi.org/10.1007/s11664-012-2106-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 06 06 2949-2956 |
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Stoltz, A. J. |
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Stoltz, A. J. ddc 670 misc HgCdTe misc defects misc EPD misc etch pit density misc dislocations misc gettering misc alternate substrate misc ICP misc plasma processing Reduction of Dislocation Density by Producing Novel Structures |
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670 VZ Reduction of Dislocation Density by Producing Novel Structures HgCdTe defects EPD etch pit density dislocations gettering alternate substrate ICP plasma processing |
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Reduction of Dislocation Density by Producing Novel Structures |
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Reduction of Dislocation Density by Producing Novel Structures |
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Stoltz, A. J. Benson, J. D. Jacobs, R. Smith, P. Almeida, L. A. Carmody, M. Farrell, S. Wijewarnasuriya, P. S. Brill, G. Chen, Y. |
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reduction of dislocation density by producing novel structures |
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Reduction of Dislocation Density by Producing Novel Structures |
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Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. © TMS (outside the USA) 2012 |
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Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. © TMS (outside the USA) 2012 |
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Abstract HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × $ 10^{5} $/$ cm^{2} $ for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × $ 10^{7} $/$ cm^{2} $. This value of 3.35 × $ 10^{5} $/$ cm^{2} $ is below the <1 × $ 10^{6} $/$ cm^{2} $ or even the better <5 × $ 10^{5} $/$ cm^{2} $ target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe. © TMS (outside the USA) 2012 |
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