Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir
Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir ha...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gravrand, O. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 41(2012), 10 vom: 07. Aug., Seite 2686-2693 |
|---|---|
| Übergeordnetes Werk: |
volume:41 ; year:2012 ; number:10 ; day:07 ; month:08 ; pages:2686-2693 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-012-2181-8 |
|---|
| Katalog-ID: |
OLC2042322547 |
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| 520 | |a Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. | ||
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10.1007/s11664-012-2181-8 doi (DE-627)OLC2042322547 (DE-He213)s11664-012-2181-8-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. IR detector MCT SFD FPA SWIR dark current low flux Mollard, L. aut Boulade, O. aut Moreau, V. aut Sanson, E. aut Destefanis, G. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 07. Aug., Seite 2686-2693 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:07 month:08 pages:2686-2693 https://doi.org/10.1007/s11664-012-2181-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 07 08 2686-2693 |
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10.1007/s11664-012-2181-8 doi (DE-627)OLC2042322547 (DE-He213)s11664-012-2181-8-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. IR detector MCT SFD FPA SWIR dark current low flux Mollard, L. aut Boulade, O. aut Moreau, V. aut Sanson, E. aut Destefanis, G. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 07. Aug., Seite 2686-2693 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:07 month:08 pages:2686-2693 https://doi.org/10.1007/s11664-012-2181-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 07 08 2686-2693 |
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10.1007/s11664-012-2181-8 doi (DE-627)OLC2042322547 (DE-He213)s11664-012-2181-8-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. IR detector MCT SFD FPA SWIR dark current low flux Mollard, L. aut Boulade, O. aut Moreau, V. aut Sanson, E. aut Destefanis, G. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 07. Aug., Seite 2686-2693 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:07 month:08 pages:2686-2693 https://doi.org/10.1007/s11664-012-2181-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 07 08 2686-2693 |
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10.1007/s11664-012-2181-8 doi (DE-627)OLC2042322547 (DE-He213)s11664-012-2181-8-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. IR detector MCT SFD FPA SWIR dark current low flux Mollard, L. aut Boulade, O. aut Moreau, V. aut Sanson, E. aut Destefanis, G. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 07. Aug., Seite 2686-2693 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:07 month:08 pages:2686-2693 https://doi.org/10.1007/s11664-012-2181-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 07 08 2686-2693 |
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10.1007/s11664-012-2181-8 doi (DE-627)OLC2042322547 (DE-He213)s11664-012-2181-8-p DE-627 ger DE-627 rakwb eng 670 VZ Gravrand, O. verfasserin aut Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2012 Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. IR detector MCT SFD FPA SWIR dark current low flux Mollard, L. aut Boulade, O. aut Moreau, V. aut Sanson, E. aut Destefanis, G. aut Enthalten in Journal of electronic materials Springer US, 1972 41(2012), 10 vom: 07. Aug., Seite 2686-2693 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:41 year:2012 number:10 day:07 month:08 pages:2686-2693 https://doi.org/10.1007/s11664-012-2181-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 41 2012 10 07 08 2686-2693 |
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| title_full |
Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir |
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Gravrand, O. |
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Journal of electronic materials |
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Journal of electronic materials |
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eng |
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600 - Technology |
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marc |
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2012 |
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txt |
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2686 |
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Gravrand, O. Mollard, L. Boulade, O. Moreau, V. Sanson, E. Destefanis, G. |
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41 |
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670 VZ |
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Aufsätze |
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Gravrand, O. |
| doi_str_mv |
10.1007/s11664-012-2181-8 |
| dewey-full |
670 |
| title_sort |
ultralow-dark-current cdhgte fpas in the swir range at cea and sofradir |
| title_auth |
Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir |
| abstract |
Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. © TMS 2012 |
| abstractGer |
Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. © TMS 2012 |
| abstract_unstemmed |
Abstract We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm wavelength range. To this end, Sofradir has designed a source follower per detector read-out circuit (ROIC, 384 × 288, 15 μm pitch). This ROIC has been hybridized on different HgCdTe diode configurations processed at CEA-LETI, and low-flux characterizations have been carried out at CEA-IRFU at low temperature (from 60 K to 160 K). Both ion-implanted p/n and n/p diodes have been evaluated. The metallurgical nature of the absorbing layer has also been examined, and both molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE) have been applied. Dark-current measurements are discussed in comparison with previous results from the literature. State-of-the-art dark currents are recorded for temperatures higher than 120 K. At temperatures lower than 100 K, the decrease in dark current flattens out for both technologies. In this region, currents between 0.4 $ e^{–} $/s/pixel and 0.06 $ e^{–} $/s/pixel are reported. © TMS 2012 |
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GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 |
| container_issue |
10 |
| title_short |
Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir |
| url |
https://doi.org/10.1007/s11664-012-2181-8 |
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| author2 |
Mollard, L. Boulade, O. Moreau, V. Sanson, E. Destefanis, G. |
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Mollard, L. Boulade, O. Moreau, V. Sanson, E. Destefanis, G. |
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| up_date |
2024-07-03T14:43:06.889Z |
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