Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures
Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In o...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hashiba, M. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 43(2013), 1 vom: 29. Aug., Seite 247-258 |
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| Übergeordnetes Werk: |
volume:43 ; year:2013 ; number:1 ; day:29 ; month:08 ; pages:247-258 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-013-2722-9 |
|---|
| Katalog-ID: |
OLC2042328332 |
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| 520 | |a Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. | ||
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10.1007/s11664-013-2722-9 doi (DE-627)OLC2042328332 (DE-He213)s11664-013-2722-9-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 1 vom: 29. Aug., Seite 247-258 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:1 day:29 month:08 pages:247-258 https://doi.org/10.1007/s11664-013-2722-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 1 29 08 247-258 |
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10.1007/s11664-013-2722-9 doi (DE-627)OLC2042328332 (DE-He213)s11664-013-2722-9-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 1 vom: 29. Aug., Seite 247-258 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:1 day:29 month:08 pages:247-258 https://doi.org/10.1007/s11664-013-2722-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 1 29 08 247-258 |
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10.1007/s11664-013-2722-9 doi (DE-627)OLC2042328332 (DE-He213)s11664-013-2722-9-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 1 vom: 29. Aug., Seite 247-258 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:1 day:29 month:08 pages:247-258 https://doi.org/10.1007/s11664-013-2722-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 1 29 08 247-258 |
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10.1007/s11664-013-2722-9 doi (DE-627)OLC2042328332 (DE-He213)s11664-013-2722-9-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 1 vom: 29. Aug., Seite 247-258 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:1 day:29 month:08 pages:247-258 https://doi.org/10.1007/s11664-013-2722-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 1 29 08 247-258 |
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10.1007/s11664-013-2722-9 doi (DE-627)OLC2042328332 (DE-He213)s11664-013-2722-9-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. Metallization solder conductor intermetallic compounds Shinmei, W. aut Kajihara, M. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 1 vom: 29. Aug., Seite 247-258 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:1 day:29 month:08 pages:247-258 https://doi.org/10.1007/s11664-013-2722-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 1 29 08 247-258 |
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In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. 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Hashiba, M. |
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670 VZ Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures Metallization solder conductor intermetallic compounds |
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Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures |
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Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures |
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Hashiba, M. |
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2013 |
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247 |
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Hashiba, M. Shinmei, W. Kajihara, M. |
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Hashiba, M. |
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10.1007/s11664-013-2722-9 |
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670 |
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kinetics of reactive diffusion in the (pd-cu)/sn system at solid-state temperatures |
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Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures |
| abstract |
Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. © TMS 2013 |
| abstractGer |
Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. © TMS 2013 |
| abstract_unstemmed |
Abstract The kinetics of solid-state reactive diffusion in the (Pd-Cu)/Sn system was experimentally observed to examine how adding Cu into Pd influenced the growth behavior of compounds at the junction between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. In our experiment, Sn/(Pd-Cu)/Sn diffusion couples with Cu mole fractions (y) of 0.243, 0.497, and 0.735 were isothermally annealed at temperatures of 433 K to 473 K for various times up to 385 h. Annealing caused an intermetallic layer of rather uniform thickness to form between the Sn and Pd-Cu specimens in the diffusion couple. The intermetallic layer consisted of $ PdSn_{4} $, $ PdSn_{3} $, $ PdSn_{2} $, and $ Cu_{6} $$ Sn_{5} $ for y = 0. 243. However, $ PdSn_{3} $ and $ PdSn_{2} $ were not clearly detected for y = 0.497 or 0.735. The total thickness of the intermetallic layer was proportional to a power function of the annealing time, with the exponent of the power function being 0.33 to 0.53. Cases where the exponent was smaller than 0.5 indicated that boundary diffusion controlled the growth of the intermetallic layer. Cases where the exponent was equal to 0.5 implied that volume diffusion was the rate-controlling process. Even for exponents close to 0.5, however, the grain growth behavior of the intermetallic layer suggested that the layer growth was governed by boundary diffusion. For the annealing times tested in this work, the overall growth rate of the intermetallic layer was insensitive to the Cu concentration at y < 0.75, but decreased remarkably with increasing Cu concentration at y > 0.75. As a consequence, the growth of compounds at the Pd junction in the multilayer Pd/Ni/Cu conductor was markedly decelerated by adding Cu when y > 0.75. © TMS 2013 |
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Kinetics of Reactive Diffusion in the (Pd-Cu)/Sn System at Solid-State Temperatures |
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