Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO
Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk betwee...
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| Autor*in: |
Lee, Jin-Woo [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2014 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 43(2014), 5 vom: 11. März, Seite 1384-1388 |
|---|---|
| Übergeordnetes Werk: |
volume:43 ; year:2014 ; number:5 ; day:11 ; month:03 ; pages:1384-1388 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-014-3083-8 |
|---|
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OLC2042330108 |
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| 520 | |a Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. | ||
| 650 | 4 | |a Resistive switching | |
| 650 | 4 | |a self-rectifying | |
| 650 | 4 | |a current hysteresis | |
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| 650 | 4 | |a amorphous In-Ga-Zn-O | |
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| 700 | 1 | |a Kim, Myeong-Ho |4 aut | |
| 700 | 1 | |a Lee, Seung-Ryul |4 aut | |
| 700 | 1 | |a Kim, Young-Bae |4 aut | |
| 700 | 1 | |a Choi, Duck-Kyun |4 aut | |
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10.1007/s11664-014-3083-8 doi (DE-627)OLC2042330108 (DE-He213)s11664-014-3083-8-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Jin-Woo verfasserin aut Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. Resistive switching self-rectifying current hysteresis ReRAM interface amorphous In-Ga-Zn-O Kwon, Hyeon-Min aut Kim, Myeong-Ho aut Lee, Seung-Ryul aut Kim, Young-Bae aut Choi, Duck-Kyun aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 5 vom: 11. März, Seite 1384-1388 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:5 day:11 month:03 pages:1384-1388 https://doi.org/10.1007/s11664-014-3083-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 5 11 03 1384-1388 |
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10.1007/s11664-014-3083-8 doi (DE-627)OLC2042330108 (DE-He213)s11664-014-3083-8-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Jin-Woo verfasserin aut Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. Resistive switching self-rectifying current hysteresis ReRAM interface amorphous In-Ga-Zn-O Kwon, Hyeon-Min aut Kim, Myeong-Ho aut Lee, Seung-Ryul aut Kim, Young-Bae aut Choi, Duck-Kyun aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 5 vom: 11. März, Seite 1384-1388 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:5 day:11 month:03 pages:1384-1388 https://doi.org/10.1007/s11664-014-3083-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 5 11 03 1384-1388 |
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10.1007/s11664-014-3083-8 doi (DE-627)OLC2042330108 (DE-He213)s11664-014-3083-8-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Jin-Woo verfasserin aut Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. Resistive switching self-rectifying current hysteresis ReRAM interface amorphous In-Ga-Zn-O Kwon, Hyeon-Min aut Kim, Myeong-Ho aut Lee, Seung-Ryul aut Kim, Young-Bae aut Choi, Duck-Kyun aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 5 vom: 11. März, Seite 1384-1388 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:5 day:11 month:03 pages:1384-1388 https://doi.org/10.1007/s11664-014-3083-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 5 11 03 1384-1388 |
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10.1007/s11664-014-3083-8 doi (DE-627)OLC2042330108 (DE-He213)s11664-014-3083-8-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Jin-Woo verfasserin aut Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. Resistive switching self-rectifying current hysteresis ReRAM interface amorphous In-Ga-Zn-O Kwon, Hyeon-Min aut Kim, Myeong-Ho aut Lee, Seung-Ryul aut Kim, Young-Bae aut Choi, Duck-Kyun aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 5 vom: 11. März, Seite 1384-1388 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:5 day:11 month:03 pages:1384-1388 https://doi.org/10.1007/s11664-014-3083-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 5 11 03 1384-1388 |
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10.1007/s11664-014-3083-8 doi (DE-627)OLC2042330108 (DE-He213)s11664-014-3083-8-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Jin-Woo verfasserin aut Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. Resistive switching self-rectifying current hysteresis ReRAM interface amorphous In-Ga-Zn-O Kwon, Hyeon-Min aut Kim, Myeong-Ho aut Lee, Seung-Ryul aut Kim, Young-Bae aut Choi, Duck-Kyun aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 5 vom: 11. März, Seite 1384-1388 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:5 day:11 month:03 pages:1384-1388 https://doi.org/10.1007/s11664-014-3083-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 5 11 03 1384-1388 |
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Lee, Jin-Woo Kwon, Hyeon-Min Kim, Myeong-Ho Lee, Seung-Ryul Kim, Young-Bae Choi, Duck-Kyun |
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Lee, Jin-Woo |
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10.1007/s11664-014-3083-8 |
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self-rectifying effect in resistive switching memory using amorphous ingazno |
| title_auth |
Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO |
| abstract |
Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. © TMS 2014 |
| abstractGer |
Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. © TMS 2014 |
| abstract_unstemmed |
Abstract Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and $ TaO_{x} $ was examined in a Pt/a-IGZO/$ TaO_{x} $/$ Al_{2} $$ O_{3} $/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the $ TaO_{x} $, an oxygen-rich $ TaO_{x} $ interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and $ TaO_{x} $. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about $ 10^{1} $ at a read voltage of −0.5 V, and the rectifying ratio was about $ 10^{3} $ at ±2 V. © TMS 2014 |
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Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO |
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