A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy
Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been...
Ausführliche Beschreibung
Autor*in: |
Appel, O. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2013 |
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Schlagwörter: |
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Anmerkung: |
© TMS 2013 |
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Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 43(2013), 6 vom: 07. Dez., Seite 1976-1982 |
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Übergeordnetes Werk: |
volume:43 ; year:2013 ; number:6 ; day:07 ; month:12 ; pages:1976-1982 |
Links: |
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DOI / URN: |
10.1007/s11664-013-2930-3 |
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OLC204233023X |
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10.1007/s11664-013-2930-3 doi (DE-627)OLC204233023X (DE-He213)s11664-013-2930-3-p DE-627 ger DE-627 rakwb eng 670 VZ Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric half-Heusler bismuth antimony Gelbstein, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 6 07 12 1976-1982 |
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10.1007/s11664-013-2930-3 doi (DE-627)OLC204233023X (DE-He213)s11664-013-2930-3-p DE-627 ger DE-627 rakwb eng 670 VZ Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric half-Heusler bismuth antimony Gelbstein, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 6 07 12 1976-1982 |
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10.1007/s11664-013-2930-3 doi (DE-627)OLC204233023X (DE-He213)s11664-013-2930-3-p DE-627 ger DE-627 rakwb eng 670 VZ Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric half-Heusler bismuth antimony Gelbstein, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 6 07 12 1976-1982 |
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10.1007/s11664-013-2930-3 doi (DE-627)OLC204233023X (DE-He213)s11664-013-2930-3-p DE-627 ger DE-627 rakwb eng 670 VZ Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric half-Heusler bismuth antimony Gelbstein, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 6 07 12 1976-1982 |
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10.1007/s11664-013-2930-3 doi (DE-627)OLC204233023X (DE-He213)s11664-013-2930-3-p DE-627 ger DE-627 rakwb eng 670 VZ Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric half-Heusler bismuth antimony Gelbstein, Y. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 AR 43 2013 6 07 12 1976-1982 |
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Appel, O. |
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Appel, O. ddc 670 misc Thermoelectric misc half-Heusler misc bismuth misc antimony A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy |
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a comparison between the effects of sb and bi doping on the thermoelectric properties of the $ ti_{0.3} $$ zr_{0.35} $$ hf_{0.35} $nisn half-heusler alloy |
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A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy |
abstract |
Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. © TMS 2013 |
abstractGer |
Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. © TMS 2013 |
abstract_unstemmed |
Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. © TMS 2013 |
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GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 |
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6 |
title_short |
A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} $$ Zr_{0.35} $$ Hf_{0.35} $NiSn Half-Heusler Alloy |
url |
https://doi.org/10.1007/s11664-013-2930-3 |
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Gelbstein, Y. |
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doi_str |
10.1007/s11664-013-2930-3 |
up_date |
2024-07-03T14:45:13.759Z |
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