Improvements of MCT MBE Growth on GaAs
Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch de...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ziegler, J. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2014 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 43(2014), 8 vom: 29. Apr., Seite 2935-2940 |
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volume:43 ; year:2014 ; number:8 ; day:29 ; month:04 ; pages:2935-2940 |
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10.1007/s11664-014-3149-7 |
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| 520 | |a Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. | ||
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| 700 | 1 | |a Wollrab, R. |4 aut | |
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10.1007/s11664-014-3149-7 doi (DE-627)OLC2042332178 (DE-He213)s11664-014-3149-7-p DE-627 ger DE-627 rakwb eng 670 VZ Ziegler, J. verfasserin aut Improvements of MCT MBE Growth on GaAs 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. Infrared detectors HgCdTe MCT IR-FPA MBE GaAs substrates Wenisch, J. aut Breiter, R. aut Eich, D. aut Figgemeier, H. aut Fries, P. aut Lutz, H. aut Wollrab, R. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 8 vom: 29. Apr., Seite 2935-2940 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:8 day:29 month:04 pages:2935-2940 https://doi.org/10.1007/s11664-014-3149-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 8 29 04 2935-2940 |
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10.1007/s11664-014-3149-7 doi (DE-627)OLC2042332178 (DE-He213)s11664-014-3149-7-p DE-627 ger DE-627 rakwb eng 670 VZ Ziegler, J. verfasserin aut Improvements of MCT MBE Growth on GaAs 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. Infrared detectors HgCdTe MCT IR-FPA MBE GaAs substrates Wenisch, J. aut Breiter, R. aut Eich, D. aut Figgemeier, H. aut Fries, P. aut Lutz, H. aut Wollrab, R. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 8 vom: 29. Apr., Seite 2935-2940 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:8 day:29 month:04 pages:2935-2940 https://doi.org/10.1007/s11664-014-3149-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 8 29 04 2935-2940 |
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10.1007/s11664-014-3149-7 doi (DE-627)OLC2042332178 (DE-He213)s11664-014-3149-7-p DE-627 ger DE-627 rakwb eng 670 VZ Ziegler, J. verfasserin aut Improvements of MCT MBE Growth on GaAs 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. Infrared detectors HgCdTe MCT IR-FPA MBE GaAs substrates Wenisch, J. aut Breiter, R. aut Eich, D. aut Figgemeier, H. aut Fries, P. aut Lutz, H. aut Wollrab, R. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 8 vom: 29. Apr., Seite 2935-2940 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:8 day:29 month:04 pages:2935-2940 https://doi.org/10.1007/s11664-014-3149-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 8 29 04 2935-2940 |
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10.1007/s11664-014-3149-7 doi (DE-627)OLC2042332178 (DE-He213)s11664-014-3149-7-p DE-627 ger DE-627 rakwb eng 670 VZ Ziegler, J. verfasserin aut Improvements of MCT MBE Growth on GaAs 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. Infrared detectors HgCdTe MCT IR-FPA MBE GaAs substrates Wenisch, J. aut Breiter, R. aut Eich, D. aut Figgemeier, H. aut Fries, P. aut Lutz, H. aut Wollrab, R. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 8 vom: 29. Apr., Seite 2935-2940 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:8 day:29 month:04 pages:2935-2940 https://doi.org/10.1007/s11664-014-3149-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 8 29 04 2935-2940 |
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10.1007/s11664-014-3149-7 doi (DE-627)OLC2042332178 (DE-He213)s11664-014-3149-7-p DE-627 ger DE-627 rakwb eng 670 VZ Ziegler, J. verfasserin aut Improvements of MCT MBE Growth on GaAs 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2014 Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. Infrared detectors HgCdTe MCT IR-FPA MBE GaAs substrates Wenisch, J. aut Breiter, R. aut Eich, D. aut Figgemeier, H. aut Fries, P. aut Lutz, H. aut Wollrab, R. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 8 vom: 29. Apr., Seite 2935-2940 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:8 day:29 month:04 pages:2935-2940 https://doi.org/10.1007/s11664-014-3149-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 8 29 04 2935-2940 |
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Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. © TMS 2014 |
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Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. © TMS 2014 |
| abstract_unstemmed |
Abstract In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA. © TMS 2014 |
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Improvements of MCT MBE Growth on GaAs |
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Wenisch, J. Breiter, R. Eich, D. Figgemeier, H. Fries, P. Lutz, H. Wollrab, R. |
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Wenisch, J. Breiter, R. Eich, D. Figgemeier, H. Fries, P. Lutz, H. Wollrab, R. |
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