A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds
HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination veloc...
Ausführliche Beschreibung
Autor*in: |
Stoltz, A. J. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2014 |
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Schlagwörter: |
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Anmerkung: |
© TMS (outside the USA) 2014 |
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Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 43(2014), 9 vom: 11. Juli, Seite 3708-3717 |
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Übergeordnetes Werk: |
volume:43 ; year:2014 ; number:9 ; day:11 ; month:07 ; pages:3708-3717 |
Links: |
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DOI / URN: |
10.1007/s11664-014-3281-4 |
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Katalog-ID: |
OLC2042332526 |
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520 | |a HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. | ||
650 | 4 | |a HgCdTe | |
650 | 4 | |a CdTe | |
650 | 4 | |a CdZnTe | |
650 | 4 | |a Inductively coupled plasma (ICP) | |
650 | 4 | |a Electron cyclotron resonance (ECR) | |
700 | 1 | |a Benson, J. D. |4 aut | |
700 | 1 | |a Jaime-Vasquez, M. |4 aut | |
700 | 1 | |a Smith, P. J. |4 aut | |
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700 | 1 | |a Jacobs, R. |4 aut | |
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700 | 1 | |a Supola, N. |4 aut | |
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10.1007/s11664-014-3281-4 doi (DE-627)OLC2042332526 (DE-He213)s11664-014-3281-4-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe CdTe CdZnTe Inductively coupled plasma (ICP) Electron cyclotron resonance (ECR) Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 9 11 07 3708-3717 |
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10.1007/s11664-014-3281-4 doi (DE-627)OLC2042332526 (DE-He213)s11664-014-3281-4-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe CdTe CdZnTe Inductively coupled plasma (ICP) Electron cyclotron resonance (ECR) Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 9 11 07 3708-3717 |
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10.1007/s11664-014-3281-4 doi (DE-627)OLC2042332526 (DE-He213)s11664-014-3281-4-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe CdTe CdZnTe Inductively coupled plasma (ICP) Electron cyclotron resonance (ECR) Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 9 11 07 3708-3717 |
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10.1007/s11664-014-3281-4 doi (DE-627)OLC2042332526 (DE-He213)s11664-014-3281-4-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe CdTe CdZnTe Inductively coupled plasma (ICP) Electron cyclotron resonance (ECR) Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 9 11 07 3708-3717 |
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10.1007/s11664-014-3281-4 doi (DE-627)OLC2042332526 (DE-He213)s11664-014-3281-4-p DE-627 ger DE-627 rakwb eng 670 VZ Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe CdTe CdZnTe Inductively coupled plasma (ICP) Electron cyclotron resonance (ECR) Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Springer US, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 43 2014 9 11 07 3708-3717 |
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a review of the characterization techniques for the analysis of etch processed surfaces of hgcdte and related compounds |
title_auth |
A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds |
abstract |
HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. © TMS (outside the USA) 2014 |
abstractGer |
HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. © TMS (outside the USA) 2014 |
abstract_unstemmed |
HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. © TMS (outside the USA) 2014 |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 |
container_issue |
9 |
title_short |
A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds |
url |
https://doi.org/10.1007/s11664-014-3281-4 |
remote_bool |
false |
author2 |
Benson, J. D. Jaime-Vasquez, M. Smith, P. J. Almeida, L. A. Jacobs, R. Markunas, J. Brogden, K. Brown, A. Lennon, C. Maloney, P. Supola, N. |
author2Str |
Benson, J. D. Jaime-Vasquez, M. Smith, P. J. Almeida, L. A. Jacobs, R. Markunas, J. Brogden, K. Brown, A. Lennon, C. Maloney, P. Supola, N. |
ppnlink |
129398233 |
mediatype_str_mv |
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isOA_txt |
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hochschulschrift_bool |
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doi_str |
10.1007/s11664-014-3281-4 |
up_date |
2024-07-03T14:45:48.461Z |
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1803569540330684416 |
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