Characterization of ALD Processed Gallium Doped $ TiO_{2} $ Hole Blocking Layer in an Inverted Organic Solar Cell
Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lee, Eun Ju [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2016 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 46(2016), 2 vom: 21. Okt., Seite 961-966 |
|---|---|
| Übergeordnetes Werk: |
volume:46 ; year:2016 ; number:2 ; day:21 ; month:10 ; pages:961-966 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-016-5045-9 |
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OLC2042350133 |
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| 520 | |a Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. | ||
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10.1007/s11664-016-5045-9 doi (DE-627)OLC2042350133 (DE-He213)s11664-016-5045-9-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Eun Ju verfasserin aut Characterization of ALD Processed Gallium Doped $ TiO_{2} $ Hole Blocking Layer in an Inverted Organic Solar Cell 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2016 Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. ALD inverted solar cell Ga doping hole blocking layer TiO PCE Ryu, Sang Ouk aut Enthalten in Journal of electronic materials Springer US, 1972 46(2016), 2 vom: 21. Okt., Seite 961-966 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2016 number:2 day:21 month:10 pages:961-966 https://doi.org/10.1007/s11664-016-5045-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2016 2 21 10 961-966 |
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10.1007/s11664-016-5045-9 doi (DE-627)OLC2042350133 (DE-He213)s11664-016-5045-9-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Eun Ju verfasserin aut Characterization of ALD Processed Gallium Doped $ TiO_{2} $ Hole Blocking Layer in an Inverted Organic Solar Cell 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2016 Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. ALD inverted solar cell Ga doping hole blocking layer TiO PCE Ryu, Sang Ouk aut Enthalten in Journal of electronic materials Springer US, 1972 46(2016), 2 vom: 21. Okt., Seite 961-966 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2016 number:2 day:21 month:10 pages:961-966 https://doi.org/10.1007/s11664-016-5045-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2016 2 21 10 961-966 |
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10.1007/s11664-016-5045-9 doi (DE-627)OLC2042350133 (DE-He213)s11664-016-5045-9-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Eun Ju verfasserin aut Characterization of ALD Processed Gallium Doped $ TiO_{2} $ Hole Blocking Layer in an Inverted Organic Solar Cell 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2016 Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. ALD inverted solar cell Ga doping hole blocking layer TiO PCE Ryu, Sang Ouk aut Enthalten in Journal of electronic materials Springer US, 1972 46(2016), 2 vom: 21. Okt., Seite 961-966 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2016 number:2 day:21 month:10 pages:961-966 https://doi.org/10.1007/s11664-016-5045-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2016 2 21 10 961-966 |
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10.1007/s11664-016-5045-9 doi (DE-627)OLC2042350133 (DE-He213)s11664-016-5045-9-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Eun Ju verfasserin aut Characterization of ALD Processed Gallium Doped $ TiO_{2} $ Hole Blocking Layer in an Inverted Organic Solar Cell 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2016 Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. ALD inverted solar cell Ga doping hole blocking layer TiO PCE Ryu, Sang Ouk aut Enthalten in Journal of electronic materials Springer US, 1972 46(2016), 2 vom: 21. Okt., Seite 961-966 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2016 number:2 day:21 month:10 pages:961-966 https://doi.org/10.1007/s11664-016-5045-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2016 2 21 10 961-966 |
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10.1007/s11664-016-5045-9 doi (DE-627)OLC2042350133 (DE-He213)s11664-016-5045-9-p DE-627 ger DE-627 rakwb eng 670 VZ Lee, Eun Ju verfasserin aut Characterization of ALD Processed Gallium Doped $ TiO_{2} $ Hole Blocking Layer in an Inverted Organic Solar Cell 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2016 Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. ALD inverted solar cell Ga doping hole blocking layer TiO PCE Ryu, Sang Ouk aut Enthalten in Journal of electronic materials Springer US, 1972 46(2016), 2 vom: 21. Okt., Seite 961-966 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2016 number:2 day:21 month:10 pages:961-966 https://doi.org/10.1007/s11664-016-5045-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2016 2 21 10 961-966 |
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Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. © The Minerals, Metals & Materials Society 2016 |
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Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. © The Minerals, Metals & Materials Society 2016 |
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Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping. © The Minerals, Metals & Materials Society 2016 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042350133</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230401130154.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2016 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11664-016-5045-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042350133</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11664-016-5045-9-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lee, Eun Ju</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characterization of ALD Processed Gallium Doped $ TiO_{2} $ Hole Blocking Layer in an Inverted Organic Solar Cell</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Minerals, Metals & Materials Society 2016</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped $ TiO_{2} $ as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped $ TiO_{2} $ layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. 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